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MT29F1G16ABBEAH4-AITX:E

Micron Technology

MT29F1G16ABBEAH4-AITX:E by Micron Technology

Micron Technology's MT29F1G16ABBEAH4-AITX:E is a 64MX16 SLC NAND flash memory with 1073741824-bit density. Operating at 1.8V, it features a very thin profile package style and industrial temperature grade suitability. Ideal for applications requiring high-speed parallel data storage in compact devices.

Median Price

$2.650

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 2,520 parts In-Stock

1+ parts

-

100+ parts

-

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$2.650

10k+ parts

$2.170

2,520

-

-

$2.650

$2.170

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,828 parts In-Stock

1+ parts

-

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7,828

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Chip Stock

USA . 5,510 parts In-Stock

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5,510

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Digiode

USA . 1,682 parts In-Stock

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-

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1,682

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

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300

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NAC Semi

USA . 276 parts In-Stock

1+ parts

-

100+ parts

$3.060

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276

-

$3.060

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,405 parts In-Stock

1+ parts

$2.250

100+ parts

-

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2,405

$2.250

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AZTECH Wire

Italy . 308 parts In-Stock

1+ parts

$16.670

100+ parts

-

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308

$16.670

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A-Z Elektronik GmbH

Germany . 5,480 parts In-Stock

1+ parts

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5,480

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Corphita

USA . 810 parts In-Stock

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810

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Microchip USA

USA . 374 parts In-Stock

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374

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Overview

Experience lightning-fast data storage and retrieval with the MT29F1G16ABBEAH4-AITX:E by Micron Technology. As a leader in flash memory technology, Micron ensures top-notch quality and reliability in every product. This flash memory device is perfect for a wide range of applications, providing secure and efficient data storage solutions. With a nominal supply voltage of 1.8V and industrial temperature grade, this SLC NAND type memory offers outstanding performance and durability. Trust Micron to deliver cutting-edge technology that meets your storage needs effortlessly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the flash memory components inside.

Nominal Supply Voltage / Vsup (V): 1.8

The low supply voltage of 1.8V ensures energy efficiency and compatibility with a wide range of electronic devices.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible and efficient data access, making this flash memory suitable for various applications.

Organization: 64MX16

The 64MX16 organization indicates a high storage capacity and efficient data organization for optimal performance.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliable operation in harsh environmental conditions, making this flash memory ideal for industrial applications.

Technology: CMOS

The CMOS technology used in this flash memory offers low power consumption and high speed operation, making it a reliable choice for electronic devices.

Memory Density: 1073741824 bit

With a memory density of 1073741824 bits, this flash memory can store a large amount of data efficiently, making it suitable for high-capacity storage solutions.

Memory IC Type: FLASH

Being a flash memory IC type, this product offers fast read and write speeds, durability, and reliability for data storage applications.

Technical Specifications

Flash Memory MT29F1G16ABBEAH4-AITX:E attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PBGA-B63

Length:

11 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

63

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Programming Voltage (V):

1.8

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Type:

SLC NAND TYPE

Width:

9 mm

Trade Compliance

MT29F1G16ABBEAH4-AITX:E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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