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MT29F1G08ABAEAH4-AITX:E

Micron Technology

MT29F1G08ABAEAH4-AITX:E by Micron Technology

Micron Technology's MT29F1G08ABAEAH4-AITX:E is a 128MX8 SLC NAND flash memory with 1073741824 bit density. Operating at 3.3V, it has a temperature range of -40 to 85 °C and uses parallel programming with 0.8mm terminal pitch. Ideal for industrial applications requiring high-speed data storage in compact devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Vyrian

USA . 5,729 parts In-Stock

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Chip Stock

USA . 4,521 parts In-Stock

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Bristol Electronics

USA . 1,000 parts In-Stock

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Atlantic Semiconductor

USA . 1,000 parts In-Stock

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Digiode

USA . 738 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Ampacity Inc.

Singapore . 814 parts In-Stock

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$4.000

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Corohmni

South Africa . 304 parts In-Stock

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$5.475

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AZTECH Wire

Italy . 262 parts In-Stock

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$18.962

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Perfect Parts

USA . 4,316 parts In-Stock

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Argo Parts USA

USA . 3,637 parts In-Stock

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Corphita

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Continental Prestige Electronics

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Microchip USA

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Aranea Global

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Speed Components Ltd (Excess)

Israel . 99 parts In-Stock

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Overview

Experience the superior quality and reliability of Micron Technology with the MT29F1G08ABAEAH4-AITX:E flash memory. Offering a wide range of applications in various industries, this product provides unmatched value and benefits to customers looking for high-performance memory solutions. With its advanced technology and industrial-grade temperature tolerance, the MT29F1G08ABAEAH4-AITX:E is the perfect choice for your next project. Trust Micron Technology to deliver top-notch products that exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the product for long-term use.

Surface Mount: YES

Being surface mountable makes it easy to integrate this flash memory product into various electronic devices efficiently.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent operation of the flash memory, enhancing overall system performance.

Nominal Supply Voltage: 3.3V

Operates efficiently at a standard voltage level, making it compatible with a wide range of devices.

Maximum Operating Temperature: 85°C

With a high maximum operating temperature, this flash memory is suitable for industrial environments where temperature fluctuations are common.

Organization: 128MX8

The organization of 128MX8 allows for efficient storage and retrieval of data in the flash memory.

Technology: CMOS

CMOS technology ensures low power consumption and high-speed operation, making this flash memory an energy-efficient choice.

Technical Specifications

Flash Memory MT29F1G08ABAEAH4-AITX:E attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PBGA-B63

Length:

11 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

63

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Programming Voltage (V):

2.7

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Type:

SLC NAND TYPE

Width:

9 mm

Trade Compliance

MT29F1G08ABAEAH4-AITX:E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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