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IS25LQ025B-JNLE

Integrated Silicon Solution

IS25LQ025B-JNLE by Integrated Silicon Solution

IS25LQ025B-JNLE by Integrated Silicon Solution is a 256Kx1 Flash Memory with synchronous operation at up to 104MHz. It operates b/w -40°C to 105°C, with a supply voltage range of 2.3V to 3.6V. Ideal for industrial applications requiring high-speed and reliable non-volatile memory storage in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 7,829 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Prism Electronics

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Corohmni

South Africa . 271 parts In-Stock

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$2.138

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Aztec Data Supply Inc.

USA . 738 parts In-Stock

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$2.820

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AZTECH Wire

Italy . 205 parts In-Stock

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$12.900

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Continental Prestige Electronics

USA . 4,891 parts In-Stock

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Argo Parts USA

USA . 2,396 parts In-Stock

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Bastille Electronics

Australia . 700 parts In-Stock

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Perfect Parts

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Overview

Discover the cutting-edge IS25LQ025B-JNLE by Integrated Silicon Solution, a top-tier flash memory chip that promises lightning-fast performance and unparalleled reliability. With a focus on quality and innovation, ISS offers a product that exceeds industry standards, making it ideal for a wide range of applications. From industrial automation to consumer electronics, this flash memory chip delivers exceptional value with its high-speed synchronous operation, low power consumption, and compact small outline package design. Elevate your projects with IS25LQ025B-JNLE and experience the difference that superior technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the flash memory reliable for long-term use.

Surface Mount: YES

Allows for easy installation on circuit boards without the need for additional mounting hardware.

Operating Mode: SYNCHRONOUS

Enables fast and efficient data transfer between the memory and the connected devices.

Nominal Supply Voltage / Vsup (V): 3

Operates at a standard voltage level, ensuring compatibility with most systems.

Maximum Operating Temperature: 105 °C

Can withstand high temperatures, suitable for industrial and harsh environments.

Memory Density: 262144 bit

Provides a large storage capacity for storing data and programs.

Technical Specifications

Flash Memory IS25LQ025B-JNLE attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Maximum Clock Frequency (fCLK):

104 MHz

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

IS25LQ025B-JNLE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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