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S40410161B1B2W010

Cypress Semiconductor

S40410161B1B2W010 by Cypress Semiconductor

S40410161B1B2W010 by Cypress Semiconductor is a 16GX8 MLC NAND Flash Memory with 137.4Gb density. Operating at 3V, it has a low profile grid array package and synchronous mode for parallel programming. Ideal for applications requiring high memory capacity in compact devices with temperatures ranging from -25 to 85°C.

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Continental Prestige Electronics

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Overview

Unlock the power of reliable and high-quality flash memory with the S40410161B1B2W010 by Cypress Semiconductor. This cutting-edge product offers unparalleled value and benefits to customers in various applications. With a focus on quality and innovation, Cypress Semiconductor is a leading manufacturer in the industry, ensuring that this flash memory delivers superior performance and reliability. Whether you're looking to enhance your data storage capabilities or streamline your system operations, the S40410161B1B2W010 is the perfect solution for your needs. Experience the difference with Cypress Semiconductor and take your technology to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and cost-effective.

Surface Mount: YES

Being surface mountable allows for easier and more efficient production processes.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data transfers are coordinated for improved performance.

Nominal Supply Voltage / Vsup (V): 3

Operating at a standard supply voltage of 3V makes it compatible with many systems.

Package Style (Meter): GRID ARRAY, LOW PROFILE

The low-profile grid array package style helps in saving space and improving heat dissipation.

Memory IC Type: FLASH

Being a flash memory type, this product offers high-speed read and write operations for efficient data storage.

Technical Specifications

Flash Memory S40410161B1B2W010 attributes and parameters. Explore more Flash Memory devices from Cypress Semiconductor

Specs

Alternate Memory Width:

4

JESD-30 Code:

R-PBGA-B100

Length:

18 mm

Memory Density:

137438953472 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

100

No. of Words:

17179869184 words

No. of Words Code:

16G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

16GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Type:

MLC NAND TYPE

Width:

14 mm

Trade Compliance

S40410161B1B2W010 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Cypress Semiconductor

Cypress Semiconductor was an American semiconductor design and manufacturing company. It offered NOR flash memories, F-RAM and SRAM Traveo microcontrollers, PSoC programmable system-on-chip solutions, analog and PMIC Power Management ICs, CapSense capacitive touch-sensing controllers, Wireless BLE Bluetooth Low-Energy and USB connectivity solutions. Its headquarters were in San Jose, California, with operations in the United States, Ireland, India and the Philippines. In April 2016, Cypress Semiconductors announced the acquisition of Broadcom’s Wireless Internet of Things Business. The deal was closed in July 2016. In June 2019, Infineon Technologies announced it would acquire Cypress for $9.4 billion.The deal closed in April 2020, making Infineon one of the world's top 10 semiconductor manufacturers. Some of its main competitors included Microchip Technology, NXP Semiconductors, Renesas Electronics and Micron Technology.

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