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IS25LP256D-RMLE

Integrated Silicon Solution

IS25LP256D-RMLE by Integrated Silicon Solution

IS25LP256D-RMLE by Integrated Silicon Solution is a 32MX8 NOR type flash memory with 268MB density. It operates at 133MHz clock frequency, has 100K write/erase cycles endurance, and uses SPI serial bus. Ideal for industrial applications requiring high-speed data storage in compact devices.

Median Price

$2.997

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1 parts In-Stock

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$2.997

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$2.997

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Nova Conductors

Japan . 500 parts In-Stock

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$3.479

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500

$3.479

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Vyrian

USA . 4,337 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 544 parts In-Stock

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$2.620

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544

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Aranea Global

USA . 500 parts In-Stock

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$3.409

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$3.273

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500

$3.409

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$3.273

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Continental Prestige Electronics

USA . 3,521 parts In-Stock

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$3.479

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$3.409

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Argo Parts USA

USA . 738 parts In-Stock

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$3.479

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738

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Corohmni

South Africa . 527 parts In-Stock

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$3.925

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527

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AZTECH Wire

Italy . 516 parts In-Stock

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$18.319

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Overview

Unlock a world of possibilities with the IS25LP256D-RMLE Flash Memory by Integrated Silicon Solution. Built to last with superior quality and reliability, this product offers customers a seamless experience in storing and accessing data efficiently. Whether you're looking to enhance your industrial applications or boost the performance of your electronic devices, this Flash Memory is the perfect solution. Say goodbye to slow loading times and hello to seamless operations with the IS25LP256D-RMLE.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this flash memory durable and cost-effective.

Surface Mount: YES

With surface mount capability, this flash memory can be easily integrated into various electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space on a circuit board.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures reliable and fast data transfer.

Nominal Supply Voltage: 3V

Operating at a nominal supply voltage of 3V makes this flash memory suitable for a wide range of applications.

No. of Terminals: 16

The 16 terminals provide a secure and stable connection for optimal performance.

Package Style: SMALL OUTLINE

The small outline package style further enhances the space-saving design of this flash memory.

Maximum Operating Temperature: 105 °C

With a maximum operating temperature of 105 °C, this flash memory can withstand harsh environmental conditions.

Organization: 32MX8

The 32MX8 organization allows for efficient data storage and retrieval.

Output Characteristics: 3-STATE

The 3-STATE output characteristics enable versatile data output options.

Minimum Operating Temperature: -40 °C

Operating at temperatures as low as -40 °C ensures reliable performance in extreme cold conditions.

Terminal Position: DUAL

The dual terminal position offers flexibility in connecting the flash memory to a circuit board.

Write Protection: HARDWARE/SOFTWARE

The write protection feature provides security for valuable data stored in the flash memory.

Maximum Seated Height: 2.65 mm

The maximum seated height of 2.65 mm allows for a compact design in electronic devices.

Maximum Clock Frequency: 133 MHz

The high maximum clock frequency of 133 MHz enables fast data processing.

Width: 7.49 mm

The width of 7.49 mm is ideal for space-constrained applications.

Minimum Supply Voltage: 2.3 V

Operating at a minimum supply voltage of 2.3 V ensures efficient power consumption.

Type: NOR TYPE

The NOR type flash memory offers high-speed read operations, making it suitable for performance-critical applications.

Length: 10.31 mm

The length of 10.31 mm provides a compact form factor for easy integration into electronic devices.

Programming Voltage: 3V

The programming voltage of 3V ensures reliable data programming for various applications.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliable performance in harsh industrial environments.

Technology: CMOS

The CMOS technology used in this flash memory offers low power consumption and high reliability.

Parallel or Serial: SERIAL

The serial interface allows for easy integration with a wide range of digital systems.

Terminal Form: GULL WING

The gull wing terminal form provides a secure connection for reliable data transfer.

Maximum Supply Current: 30 mA

The maximum supply current of 30 mA ensures efficient power usage in electronic devices.

No. of Words: 33554432 words

With a large number of words, this flash memory offers ample storage capacity for data-intensive applications.

Memory Width: 8

The memory width of 8 bits allows for efficient data processing and storage.

Minimum Data Retention Time: 20

The minimum data retention time of 20 years ensures long-term reliability of stored data.

Terminal Pitch: 1.27 mm

The terminal pitch of 1.27 mm provides a secure connection without occupying too much space on a circuit board.

No. of Words Code: 32M

The 32M words code allows for easy identification and integration of this flash memory.

Maximum Supply Voltage: 3.6 V

Operating at a maximum supply voltage of 3.6 V ensures compatibility with a wide range of power sources.

Endurance: 100000 Write/Erase Cycles

With a high endurance of 100000 write/erase cycles, this flash memory is reliable and long-lasting.

Serial Bus Type: SPI

The SPI serial bus type offers a simple and efficient communication interface for connecting to other devices.

Memory Density: 268435456 bit

The high memory density of 268435456 bits provides ample storage capacity for various data types.

Memory IC Type: FLASH

As a flash memory IC type, this product offers fast read and write speeds for data-intensive applications.

Maximum Standby Current: 0.00003 Amp

The low maximum standby current of 0.00003 Amp ensures energy-efficient operation of electronic devices using this flash memory.

Technical Specifications

Flash Memory IS25LP256D-RMLE attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Maximum Clock Frequency (fCLK):

133 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G16

Length:

10.31 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

16

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

3

Maximum Seated Height:

2.65 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00003 Amp

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

NOR TYPE

Width:

7.49 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

IS25LP256D-RMLE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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