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MT29F16G08ABCCBH1-10ITZ:C

Micron Technology

MT29F16G08ABCCBH1-10ITZ:C by Micron Technology

MT29F16G08ABCCBH1-10ITZ:C by Micron Technology is a 3.3V SLC NAND flash memory with 2GX8 organization, 4K page size, and 512K sector size. It operates synchronously in industrial temperatures, featuring a parallel interface with 100 terminals. Ideal for applications requiring fast access times and high memory density.

Median Price

$31.322

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$31.322

100+ parts

-

1k+ parts

-

10k+ parts

-

150

$31.322

-

-

-

Vyrian

USA . 2,477 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,477

-

-

-

-

Digiode

USA . 1,154 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,154

-

-

-

-

Speed Components Ltd

Israel . 172 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

172

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 420 parts In-Stock

1+ parts

$2.353

100+ parts

-

1k+ parts

-

10k+ parts

-

420

$2.353

-

-

-

Aztec Data Supply Inc.

USA . 20,436 parts In-Stock

1+ parts

$2.433

100+ parts

-

1k+ parts

-

10k+ parts

-

20,436

$2.433

-

-

-

Semicontronic

India . 537 parts In-Stock

1+ parts

$15.000

100+ parts

$14.625

1k+ parts

$14.550

10k+ parts

-

537

$15.000

$14.625

$14.550

-

AZTECH Wire

Italy . 330 parts In-Stock

1+ parts

$15.584

100+ parts

-

1k+ parts

-

10k+ parts

-

330

$15.584

-

-

-

Ampacity Inc.

Singapore . 693 parts In-Stock

1+ parts

$17.000

100+ parts

-

1k+ parts

-

10k+ parts

-

693

$17.000

-

-

-

Continental Prestige Electronics

USA . 1,188 parts In-Stock

1+ parts

$26.714

100+ parts

-

1k+ parts

-

10k+ parts

$26.180

1,188

$26.714

-

-

$26.180

Bastille Electronics

Australia . 100 parts In-Stock

1+ parts

$31.320

100+ parts

$29.754

1k+ parts

-

10k+ parts

$27.875

100

$31.320

$29.754

-

$27.875

Component Stockers USA

USA . 494 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

494

$99.990

-

-

-

Argo Parts USA

USA . 4,168 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,168

-

-

-

-

Corphita

USA . 2,095 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,095

-

-

-

-

Microchip USA

USA . 376 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

376

-

-

-

-

Overview

Enhance your electronic devices with the cutting-edge MT29F16G08ABCCBH1-10ITZ:C Flash Memory by Micron Technology. Known for their superior quality and innovative technology, Micron delivers reliable products that guarantee high performance and durability. Perfect for a wide range of applications, this flash memory provides fast access times and ample storage capacity, making it an ideal choice for customers looking to optimize their devices. Upgrade your electronics today with Micron's MT29F16G08ABCCBH1-10ITZ:C and experience the difference in speed and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a durable and lightweight package for the flash memory, making it suitable for various applications.

Surface Mount: YES

Being surface mountable makes it easier to integrate this flash memory into electronic devices, saving space and simplifying the assembly process.

Operating Mode: SYNCHRONOUS

Synchronous operation enhances the speed and efficiency of data transfer, ensuring optimal performance of the flash memory.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V provides a reliable power source for the flash memory, ensuring stable operation.

No. of Terminals: 100

Having 100 terminals allows for multiple connection points, facilitating efficient communication and data transfer within the flash memory.

Technology: CMOS

CMOS technology offers low power consumption and high-speed performance, making this flash memory energy-efficient and fast.

Memory Density: 17179869184 bit

With a high memory density, this flash memory can store a large amount of data, making it suitable for applications requiring ample storage capacity.

Maximum Standby Current: 0.00005 Amp

The low standby current consumption helps conserve power when the flash memory is not actively in use, enhancing energy efficiency.

Maximum Access Time: 20 ns

The fast access time of 20 nanoseconds ensures quick retrieval of data from the flash memory, contributing to efficient performance.

Technical Specifications

Flash Memory MT29F16G08ABCCBH1-10ITZ:C attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

20 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B100

Length:

18 mm

Memory Density:

17179869184 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

4K

No. of Terminals:

100

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA100,10X17,40

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE

Page Size (words):

4K

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1 mm

Sector Size (Words):

512K

Maximum Standby Current:

.00005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

SLC NAND TYPE

Width:

12 mm

Trade Compliance

MT29F16G08ABCCBH1-10ITZ:C Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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