Loading...

IS25WP080D-JBLE-TR

Integrated Silicon Solution

IS25WP080D-JBLE-TR by Integrated Silicon Solution

IS25WP080D-JBLE-TR by Integrated Silicon Solution is a 1MX8 Flash Memory with 133 MHz clock frequency, operating at 1.8V. Ideal for industrial applications, it offers 8388608-bit memory density in a small outline package with synchronous operation and serial interface.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,617 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,617

-

-

-

-

Nova Conductors

Japan . 870 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

870

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 596 parts In-Stock

1+ parts

$15.427

100+ parts

-

1k+ parts

-

10k+ parts

-

596

$15.427

-

-

-

Aranea Global

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Overview

Elevate your electronics with the IS25WP080D-JBLE-TR Flash Memory from Integrated Silicon Solution. Known for their top-notch quality and cutting-edge technology, ISS delivers reliable products that exceed expectations. This small outline package offers a high memory density of 8388608 bits, perfect for industrial-grade applications. With a synchronous operating mode and maximum clock frequency of 133 MHz, this flash memory provides fast and efficient performance. Upgrade your devices with ISS and experience the difference in reliability and speed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, perfect for portable devices.

Surface Mount: YES

Surface mount design allows for easy installation and integration into circuit boards.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low nominal supply voltage of 1.8V, this flash memory is energy efficient.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature of 105°C, this flash memory is suitable for industrial applications.

Technology: CMOS

The CMOS technology used in this flash memory ensures low power consumption and high speed performance.

Memory Density: 8388608 bit

High memory density allows for storing a large amount of data in a compact form factor.

Technical Specifications

Flash Memory IS25WP080D-JBLE-TR attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Maximum Clock Frequency (fCLK):

133 MHz

JESD-30 Code:

S-PDSO-G8

Length:

5.28 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

1.8

Maximum Seated Height:

2.16 mm

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

5.28 mm

Trade Compliance

IS25WP080D-JBLE-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20