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Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.

Flash Memory

Available Parts 1,676

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
FEMC008GTTG7-T13-17 by Flexxon Global

FEMC008GTTG7-T13-17

Flexxon Global

FEMC008GTTG7-T13-17 by Flexxon Global is an 8GX8 SLC NAND flash memory with 68719476736-bit density. Operating at -40 to 85 °C, it's AEC-Q100 and TS 16949 compliant for industrial use. With a rectangular package and PLASTIC/EPOXY material, it has 100 terminals for surface mount applications.

R-PBGA-B100

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

SLC NAND TYPE

FEMC016GTTE7-T13-27 by Flexxon Global

FEMC016GTTE7-T13-27

Flexxon Global

FEMC016GTTE7-T13-27 by Flexxon Global is a SLC NAND flash memory with 16GX8 organization and 137.4Gb density. It operates at -25 to 85°C, has 100 terminals, and uses CMOS technology. Ideal for automotive applications due to AEC-Q100 screening level and TS16949 certification.

R-PBGA-B100

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

SLC NAND TYPE

FEMC016GTTE7-T14-16 by Flexxon Global

FEMC016GTTE7-T14-16

Flexxon Global

FEMC016GTTE7-T14-16 by Flexxon Global is a 16GX8 MLC NAND flash memory card with 137.4Tb density and 3.3V supply voltage. Ideal for automotive applications due to AEC-Q100 screening, TS 16949 compliance, and operating temperature range of -25°C to 85°C.

R-PBGA-B153

137438953472 bit

FLASH CARD

8

1

153

17179869184 words

16G

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

MLC NAND TYPE

FEMC002GTTE7-T14-17 by Flexxon Global

FEMC002GTTE7-T14-17

Flexxon Global

FEMC002GTTE7-T14-17 by Flexxon Global is a SLC NAND flash memory with 2GX8 organization, 17179869184 bit memory density, and 3.3V nominal voltage. Ideal for automotive applications due to AEC-Q100 screening level and TS 16949 certification, operating b/w -25°C to 85°C temperature range.

R-PBGA-B153

17179869184 bit

FLASH CARD

8

1

153

2147483648 words

2G

85 Cel

-25 Cel

2GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

SLC NAND TYPE

FEMC002GTTG7-T24-17 by Flexxon Global

FEMC002GTTG7-T24-17

Flexxon Global

FEMC002GTTG7-T24-17 by Flexxon Global is a SLC NAND flash memory with 2GX8 organization, 17179869184 bit memory density, and operates at industrial temperature grade. It has 153 terminals, package shape is rectangular made of plastic/epoxy material. Ideal for automotive applications due to AEC-Q100 screening level and TS 16949 certification.

R-PBGA-B153

17179869184 bit

FLASH CARD

8

1

153

2147483648 words

2G

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

SLC NAND TYPE

FEMC008GTTA7-T13-16 by Flexxon Global

FEMC008GTTA7-T13-16

Flexxon Global

FEMC008GTTA7-T13-16 by Flexxon Global is an 8GX8 MLC NAND flash memory card with 68719476736 bit density. Operating at -40 to 85 °C, it has a supply voltage of 3.3V and meets AEC-Q100 standards. Ideal for industrial applications requiring high-density memory in a compact rectangular package.

R-PBGA-B100

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

MLC NAND TYPE

FEMC008GTTG7-T13-16 by Flexxon Global

FEMC008GTTG7-T13-16

Flexxon Global

FEMC008GTTG7-T13-16 by Flexxon Global is an 8GX8 MLC NAND flash memory card with 68719476736-bit density. It operates at industrial temperature grade (-40 to 85 °C) and has a supply voltage of 3.3V. Suitable for automotive applications due to AEC-Q100 screening level and TS16949 certification.

R-PBGA-B100

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

MLC NAND TYPE

FEMC004GTTE7-T13-17 by Flexxon Global

FEMC004GTTE7-T13-17

Flexxon Global

FEMC004GTTE7-T13-17 by Flexxon Global is a SLC NAND flash memory with 4GX8 organization, 3.3V supply voltage, and 100 terminals. It operates b/w -25°C to 85°C, suitable for automotive applications meeting AEC-Q100 standards. With a memory density of 34.36 Gb, it's ideal for high-performance storage solutions in harsh environments.

R-PBGA-B100

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

85 Cel

-25 Cel

4GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

SLC NAND TYPE

FEMC004GTTE7-T14-16 by Flexxon Global

FEMC004GTTE7-T14-16

Flexxon Global

FEMC004GTTE7-T14-16 by Flexxon Global is a Flash Memory with 4GX8 organization, MLC NAND type, and 3.3V nominal voltage. It is suitable for applications requiring high memory density and operates in a wide temperature range (-25 to 85 °C).

R-PBGA-B153

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

85 Cel

-25 Cel

4GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

MLC NAND TYPE

FEMC004GTTG7-T24-16 by Flexxon Global

FEMC004GTTG7-T24-16

Flexxon Global

FEMC004GTTG7-T24-16 by Flexxon Global is a 3.3V MLC NAND flash memory with 4GX8 organization, 34359738368-bit density, and AEC-Q100 screening. Ideal for industrial applications requiring reliable data storage in temperatures ranging from -40 to 85°C. This rectangular package with 153 terminals is designed for surface mount assembly.

R-PBGA-B153

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

MLC NAND TYPE

FEMC008GTTE7-T13-16 by Flexxon Global

FEMC008GTTE7-T13-16

Flexxon Global

Flexxon Global's FEMC008GTTE7-T13-16 Flash Memory features 8GX8 organization, MLC NAND technology, and 3.3V nominal voltage. Ideal for automotive applications with AEC-Q100 screening level, TS 16949 certification, and operating temperatures ranging from -25 to 85°C.

R-PBGA-B100

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

MLC NAND TYPE

FEMC016GTTA7-T13-16 by Flexxon Global

FEMC016GTTA7-T13-16

Flexxon Global

FEMC016GTTA7-T13-16 by Flexxon Global is a 16GX8 MLC NAND flash card with 137.4Tb memory density, operating at -40 to 85°C. Suitable for industrial applications, it features AEC-Q100 screening and TS 16949 certification, with a supply voltage of 3.3V and 100 terminals in a rectangular package.

R-PBGA-B100

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

MLC NAND TYPE

FEMC016GTTE7-T13-16 by Flexxon Global

FEMC016GTTE7-T13-16

Flexxon Global

FEMC016GTTE7-T13-16 by Flexxon Global is a flash memory with 16GX8 organization and MLC NAND type technology. It has a memory density of 137438953472 bits and operates at temperatures ranging from -25 to 85°C. This memory card is suitable for applications requiring high storage capacity and reliable performance.

R-PBGA-B100

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

MLC NAND TYPE

GD25Q16CEIGR by Gigadevice Semiconductor

GD25Q16CEIGR

Gigadevice Semiconductor

GD25Q16CEIGR by Gigadevice Semiconductor is a 2MX8 NOR flash memory with 120 MHz clock frequency. Operating at -40 to 85 °C, it offers 100000 Write/Erase Cycles endurance. Ideal for industrial applications requiring high-speed serial data storage in compact form factors.

120 MHz

20

100000 Write/Erase Cycles

R-XDSO-N8

3 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3.3

.5 mm

SPI

.000005 Amp

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOR TYPE

2 mm

HARDWARE/SOFTWARE

GD25Q16CSIG by Gigadevice Semiconductor

GD25Q16CSIG

Gigadevice Semiconductor

GD25Q16CSIG by Gigadevice Semiconductor is a 16Mb NOR Flash Memory with 120MHz clock frequency, SPI serial bus type. Operating at -40 to 85°C, it offers 100K write/erase cycles and supports hardware/software write protection. Ideal for industrial applications requiring high-speed data storage in compact designs.

120 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

5.28 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

3.3

2.16 mm

SPI

.000005 Amp

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

5.23 mm

HARDWARE/SOFTWARE

GD25Q16CTIG by Gigadevice Semiconductor

GD25Q16CTIG

Gigadevice Semiconductor

GD25Q16CTIG by Gigadevice Semiconductor is a 16Mb NOR Flash Memory with SPI interface. Operating at 120MHz clock frequency, it offers 100K Write/Erase cycles endurance. Ideal for industrial applications requiring high-speed data transfer and reliable non-volatile memory storage.

120 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3.3

1.75 mm

SPI

.000005 Amp

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

MTFDDAV480TDS-1AW1ZABYY by Micron Technology

MTFDDAV480TDS-1AW1ZABYY

Micron Technology

Micron Technology's MTFDDAV480TDS-1AW1ZABYY is a 480GX8 TLC NAND flash memory with 3.3V programming voltage. Operating in asynchronous mode, it has a memory density of 4123168604160 bit and operates b/w 0 to 70 °C. Ideal for microelectronic assemblies, this rectangular package measures 80mm x 22mm x 3.28mm and features a serial interface with no lead terminals.

R-XSMA-N75

80 mm

4123168604160 bit

FLASH MODULE

8

1

75

515396075520 words

480G

ASYNCHRONOUS

70 Cel

0 Cel

480GX8

UNSPECIFIED

SMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

3.3

3.28 mm

3.46 V

3.14 V

3.3

NO

CMOS

NO LEAD

SINGLE

TLC NAND TYPE

22 mm

2988780 by Phoenix Contact

2988780

Phoenix Contact

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; Package Shape: RECTANGULAR; No. of Words Code: 256M; Length: 36.4 mm; Width: 3.3 mm;

36.4 mm

2147483648 bit

CONFIGURATION MEMORY

8

1

268435456 words

256M

85 Cel

-40 Cel

256MX8

RECTANGULAR

3.3

42.8 mm

3.465 V

3.135 V

3.3

NO

CMOS

INDUSTRIAL

3.3 mm

SFU32048E1AE1TO-I-QT-1A1-STD by Swissbit Ag

SFU32048E1AE1TO-I-QT-1A1-STD

Swissbit Ag

SFU32048E1AE1TO-I-QT-1A1-STD by Swissbit Ag is a 2GX8 SLC NAND flash memory with 17179869184 bit density. Operating in industrial temperature range (-40 to 85 °C), it has a rectangular shape, 67.8mm length, and asynchronous mode. Ideal for applications requiring high reliability and fast data storage.

10

R-XXMA-X

67.8 mm

17179869184 bit

FLASH MODULE

8

1

2147483648 words

2G

ASYNCHRONOUS

85 Cel

-40 Cel

2GX8

UNSPECIFIED

RECTANGULAR

5

8.3 mm

208 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

UNSPECIFIED

UNSPECIFIED

SLC NAND TYPE

18 mm

MTFC16GAPALBH-ITTR by Micron Technology

MTFC16GAPALBH-ITTR

Micron Technology

MTFC16GAPALBH-ITTR by Micron Technology is a 16GX8 NAND flash memory with 17179869184 words capacity. Operating at up to 200 MHz, it has a thin profile and fine pitch package style suitable for industrial applications. With a temperature range of -40 to 85 °C, it offers high-speed synchronous operation in a compact form factor.

200 MHz

R-PBGA-B153

13 mm

137438953472 bit

FLASH CARD

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MTFC16GAPALBH-IT by Micron Technology

MTFC16GAPALBH-IT

Micron Technology

MTFC16GAPALBH-IT by Micron Technology is a 16GX8 NAND flash memory with 17179869184 words capacity. Operating at up to 200 MHz, it has a thin profile and fine pitch package style suitable for industrial applications. With a temperature range of -40 to 85 °C, this flash card offers high memory density and synchronous operation.

200 MHz

R-PBGA-B153

e1

13 mm

137438953472 bit

FLASH CARD

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

IS25WP512M-RHLA3-TR by Integrated Silicon Solution

IS25WP512M-RHLA3-TR

Integrated Silicon Solution

IS25WP512M-RHLA3-TR by Integrated Silicon Solution is a 64MX8 NOR flash memory with 112 MHz clock frequency. Operating at 1.8V, it offers 100000 write/erase cycles and supports SPI serial bus type. Ideal for automotive applications due to AEC-Q100 screening level and -40 to 125 °C temperature range.

112 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

536870912 bit

FLASH

8

3

1

24

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

.00026 Amp

35 mA

1.95 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MX25V20066M1I02 by Macronix

MX25V20066M1I02

Macronix

Macronix MX25V20066M1I02 is a NOR flash memory with 256Kx8 organization, SPI serial bus type, and 80 MHz clock frequency. It is ideal for industrial applications requiring high endurance of 100k write/erase cycles in a small outline package.

ALSO AVAILABLE WITH 2.3VMIN@50MHZ

80 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

2097152 bit

FLASH

8

1

8

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3

1.75 mm

SPI

.00002 Amp

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

HARDWARE

MTFC64GAPALGT-AIT by Micron Technology

MTFC64GAPALGT-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA153,14X14,20;

200 MHz

5

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q100

.8 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC64GAPALHT-AIT by Micron Technology

MTFC64GAPALHT-AIT

Micron Technology

Micron Technology's MTFC64GAPALHT-AIT is a 64GX8 NAND flash memory with 549755813888 bit density. Operating at up to 200 MHz, it offers -40 to 85 °C temp range and AEC-Q100 screening for industrial applications. With a very thin profile, this package features a grid array style suitable for high-speed data storage systems.

200 MHz

5

R-PBGA-B100

18 mm

549755813888 bit

FLASH CARD

8

1

100

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC16GAPALHT-AAT by Micron Technology

MTFC16GAPALHT-AAT

Micron Technology

MTFC16GAPALHT-AAT by Micron Technology is a 16GX8 NAND flash memory with 17179869184 words capacity. Operating at up to 200 MHz, it has a memory density of 137438953472 bit and supports industrial temperature grade applications. With a very thin profile package style, it is suitable for high-performance devices requiring fast data storage and retrieval.

200 MHz

5

R-PBGA-B100

18 mm

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

SYNCHRONOUS

105 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC32GAPALGT-AAT by Micron Technology

MTFC32GAPALGT-AAT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

200 MHz

5

R-PBGA-B153

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q100

.8 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC8GAMALGT-AIT by Micron Technology

MTFC8GAMALGT-AIT

Micron Technology

MTFC8GAMALGT-AIT by Micron Technology is a NAND flash memory with 8GX8 organization, operating at up to 200 MHz. It features a very thin profile, fine pitch package style suitable for industrial applications. With a memory density of 68719476736 bits and AEC-Q100 screening level, it offers reliable performance in automotive electronics.

200 MHz

5

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q100

.8 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC8GAMALHT-AIT by Micron Technology

MTFC8GAMALHT-AIT

Micron Technology

Micron Technology's MTFC8GAMALHT-AIT is a NAND flash memory with 8GX8 organization, 200 MHz clock frequency, and 85°C max operating temp. Ideal for industrial applications requiring high-speed data storage in compact devices due to its very thin profile package style and AEC-Q100 screening level.

200 MHz

5

R-PBGA-B100

18 mm

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC128GAPALBH-AIT by Micron Technology

MTFC128GAPALBH-AIT

Micron Technology

Micron Technology's MTFC128GAPALBH-AIT is a 128GX8 NAND flash memory with 1.1mm seated height, operating at up to 200MHz clock frequency. Ideal for industrial applications, it offers a memory density of 1099511627776 bit and operates in an industrial temperature range from -40°C to 85°C.

200 MHz

5

R-PBGA-B153

e1

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

85 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

AEC-Q100

1.1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MTFC8GAMALGT-AAT by Micron Technology

MTFC8GAMALGT-AAT

Micron Technology

Micron Technology's MTFC8GAMALGT-AAT is a NAND flash memory with 8GX8 organization, 200 MHz clock frequency, and 105°C max operating temp. Ideal for industrial applications requiring high-speed data storage in compact devices due to its fine pitch grid array package and low power consumption.

200 MHz

5

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

105 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q100

.8 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC8GAMALHT-AAT by Micron Technology

MTFC8GAMALHT-AAT

Micron Technology

MTFC8GAMALHT-AAT by Micron Technology is a 8GX8 NAND flash memory with 68719476736 bit density. It operates in synchronous mode at up to 200 MHz clock frequency, suitable for industrial applications requiring high-speed data storage and retrieval. With a temperature range of -40 to 105 °C, it offers reliable performance in harsh environments.

200 MHz

5

R-PBGA-B100

18 mm

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

SYNCHRONOUS

105 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC32GAPALGT-AIT by Micron Technology

MTFC32GAPALGT-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B153;

200 MHz

5

R-PBGA-B153

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q100

.8 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC32GAPALHT-AAT by Micron Technology

MTFC32GAPALHT-AAT

Micron Technology

MTFC32GAPALHT-AAT by Micron Technology is a 32GX8 NAND flash memory with 34359738368 words capacity. Operating at up to 200 MHz, it offers industrial-grade performance with -40 to 105 °C temperature range. Ideal for applications requiring high-speed data storage in compact form factors.

200 MHz

5

R-PBGA-B100

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC32GAPALHT-AIT by Micron Technology

MTFC32GAPALHT-AIT

Micron Technology

Micron Technology's MTFC32GAPALHT-AIT is a 32GX8 NAND flash memory with 34359738368 words capacity. Operating at up to 200 MHz, it features a very thin profile grid array package suitable for industrial applications. With a temperature range of -40 to 85 °C, this CMOS technology memory supports parallel operation and has a min data retention time of 5 units.

200 MHz

5

R-PBGA-B100

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFDHBA480TDF-1AW4ZABYY by Micron Technology

MTFDHBA480TDF-1AW4ZABYY

Micron Technology

FLASH MODULE; Package Code: XMA; Package Shape: RECTANGULAR; No. of Words: 515396075520 words; No. of Words Code: 480G; Package Style (Meter): MICROELECTRONIC ASSEMBLY;

R-XXMA-N

4123168604160 bit

FLASH MODULE

8

1

515396075520 words

480G

ASYNCHRONOUS

70 Cel

0 Cel

480GX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

YES

CMOS

NO LEAD

UNSPECIFIED

TLC NAND TYPE

MTFDHBA480TDF-1AW12ABYY by Micron Technology

MTFDHBA480TDF-1AW12ABYY

Micron Technology

FLASH MODULE; Package Code: XMA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel; Surface Mount: YES; Package Body Material: UNSPECIFIED;

R-XXMA-N

4123168604160 bit

FLASH MODULE

8

1

515396075520 words

480G

ASYNCHRONOUS

70 Cel

0 Cel

480GX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

YES

CMOS

NO LEAD

UNSPECIFIED

TLC NAND TYPE

MTFDHBE3T2TDG-1AW1ZABYY by Micron Technology

MTFDHBE3T2TDG-1AW1ZABYY

Micron Technology

FLASH MODULE; Package Code: XMA; Package Shape: RECTANGULAR; Surface Mount: YES; Organization: 3.2TX8; Technology: CMOS;

R-XXMA-N

28147497671065 bit

FLASH MODULE

8

1

3518437208883 words

3.2T

ASYNCHRONOUS

70 Cel

0 Cel

3.2TX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

YES

CMOS

NO LEAD

UNSPECIFIED

TLC NAND TYPE

MTFDHBE3T8TDF-1AW1ZABYY by Micron Technology

MTFDHBE3T8TDF-1AW1ZABYY

Micron Technology

FLASH MODULE; Package Code: XMA; Package Shape: RECTANGULAR; Surface Mount: YES; Technology: CMOS; No. of Words Code: 3.84T;

R-XXMA-N

33776997205278 bit

FLASH MODULE

8

1

4222124650659 words

3.84T

ASYNCHRONOUS

70 Cel

0 Cel

3.84TX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

YES

CMOS

NO LEAD

UNSPECIFIED

TLC NAND TYPE

MTFDHBE7T6TDF-1AW4ZABYY by Micron Technology

MTFDHBE7T6TDF-1AW4ZABYY

Micron Technology

Micron Technology's MTFDHBE7T6TDF-1AW4ZABYY is a RECTANGULAR MICROELECTRONIC ASSEMBLY with 7.68TX8 organization, TLC NAND TYPE, and 67553994410557 bit memory density. It operates in ASYNCHRONOUS mode at temperatures from 0 to 70 °C, suitable for FLASH MODULE applications.

R-XXMA-N

67553994410557 bit

FLASH MODULE

8

1

8444249301319 words

7.68T

ASYNCHRONOUS

70 Cel

0 Cel

7.68TX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

YES

CMOS

NO LEAD

UNSPECIFIED

TLC NAND TYPE

MTFDHBE800TDG-1AW1ZABYY by Micron Technology

MTFDHBE800TDG-1AW1ZABYY

Micron Technology

FLASH MODULE; Package Code: XMA; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel; Memory Width: 8; Type: TLC NAND TYPE;

R-XXMA-N

6871947673600 bit

FLASH MODULE

8

1

858993459200 words

800G

ASYNCHRONOUS

70 Cel

0 Cel

800GX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

YES

CMOS

NO LEAD

UNSPECIFIED

TLC NAND TYPE

MTFDHBG1T9TDF-1AW4ZABYY by Micron Technology

MTFDHBG1T9TDF-1AW4ZABYY

Micron Technology

FLASH MODULE; Package Code: XMA; Package Shape: RECTANGULAR; Terminal Position: UNSPECIFIED; Organization: 1.92TX8; Surface Mount: YES;

R-XXMA-N

16888498602639 bit

FLASH MODULE

8

1

2111062325329 words

1.92T

ASYNCHRONOUS

70 Cel

0 Cel

1.92TX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

YES

CMOS

NO LEAD

UNSPECIFIED

TLC NAND TYPE

MTFDHBE3T2TDG-1AW4ZABYY by Micron Technology

MTFDHBE3T2TDG-1AW4ZABYY

Micron Technology

FLASH MODULE; Package Code: XMA; Package Shape: RECTANGULAR; Memory Density: 28147497671065 bit; Technology: CMOS; Package Body Material: UNSPECIFIED;

R-XXMA-N

28147497671065 bit

FLASH MODULE

8

1

3518437208883 words

3.2T

ASYNCHRONOUS

70 Cel

0 Cel

3.2TX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

YES

CMOS

NO LEAD

UNSPECIFIED

TLC NAND TYPE

MTFDHBE6T4TDG-1AW4ZABYY by Micron Technology

MTFDHBE6T4TDG-1AW4ZABYY

Micron Technology

FLASH MODULE; Package Code: XMA; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS; Terminal Position: UNSPECIFIED; Maximum Operating Temperature: 70 Cel;

R-XXMA-N

56294995342131 bit

FLASH MODULE

8

1

7036874417766 words

6.4T

ASYNCHRONOUS

70 Cel

0 Cel

6.4TX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

YES

CMOS

NO LEAD

UNSPECIFIED

TLC NAND TYPE

MTFDHBG1T9TDF-1AW1ZABYY by Micron Technology

MTFDHBG1T9TDF-1AW1ZABYY

Micron Technology

FLASH MODULE; Package Code: XMA; Package Shape: RECTANGULAR; No. of Functions: 1; Terminal Form: NO LEAD; No. of Words: 2111062325329 words;

R-XXMA-N

16888498602639 bit

FLASH MODULE

8

1

2111062325329 words

1.92T

ASYNCHRONOUS

70 Cel

0 Cel

1.92TX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

YES

CMOS

NO LEAD

UNSPECIFIED

TLC NAND TYPE

MTFDHBG3T8TDF-1AW1ZABYY by Micron Technology

MTFDHBG3T8TDF-1AW1ZABYY

Micron Technology

FLASH MODULE; Package Code: XMA; Package Shape: RECTANGULAR; No. of Words: 4222124650659 words; Package Style (Meter): MICROELECTRONIC ASSEMBLY; Terminal Position: UNSPECIFIED;

R-XXMA-N

33776997205278 bit

FLASH MODULE

8

1

4222124650659 words

3.84T

ASYNCHRONOUS

70 Cel

0 Cel

3.84TX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

YES

CMOS

NO LEAD

UNSPECIFIED

TLC NAND TYPE

MTFDHBA400TDG-1AW1ZABYY by Micron Technology

MTFDHBA400TDG-1AW1ZABYY

Micron Technology

FLASH MODULE; Package Code: XMA; Package Shape: RECTANGULAR; Package Body Material: UNSPECIFIED; Package Style (Meter): MICROELECTRONIC ASSEMBLY; Terminal Position: UNSPECIFIED;

R-XXMA-N

3435973836800 bit

FLASH MODULE

8

1

429496729600 words

400G

ASYNCHRONOUS

70 Cel

0 Cel

400GX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

YES

CMOS

NO LEAD

UNSPECIFIED

TLC NAND TYPE

MTFDHBA480TDF-1AW1ZABYY by Micron Technology

MTFDHBA480TDF-1AW1ZABYY

Micron Technology

FLASH MODULE; Package Code: XMA; Package Shape: RECTANGULAR; Package Style (Meter): MICROELECTRONIC ASSEMBLY; Type: TLC NAND TYPE; No. of Words Code: 480G;

R-XXMA-N

4123168604160 bit

FLASH MODULE

8

1

515396075520 words

480G

ASYNCHRONOUS

70 Cel

0 Cel

480GX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

YES

CMOS

NO LEAD

UNSPECIFIED

TLC NAND TYPE