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MTFC8GAMALHT-AIT

Micron Technology

MTFC8GAMALHT-AIT by Micron Technology

Micron Technology's MTFC8GAMALHT-AIT is a NAND flash memory with 8GX8 organization, 200 MHz clock frequency, and 85°C max operating temp. Ideal for industrial applications requiring high-speed data storage in compact devices due to its very thin profile package style and AEC-Q100 screening level.

Median Price

$12.690

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 703 parts In-Stock

1+ parts

$12.690

100+ parts

$10.060

1k+ parts

$10.060

10k+ parts

$9.090

703

$12.690

$10.060

$10.060

$9.090

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$11.535

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$11.535

-

-

-

Digiode

USA . 1,040 parts In-Stock

1+ parts

$12.056

100+ parts

-

1k+ parts

-

10k+ parts

-

1,040

$12.056

-

-

-

Vyrian

USA . 645 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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645

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 616 parts In-Stock

1+ parts

$7.501

100+ parts

-

1k+ parts

-

10k+ parts

-

616

$7.501

-

-

-

Ampacity Inc.

Singapore . 358 parts In-Stock

1+ parts

$10.790

100+ parts

-

1k+ parts

-

10k+ parts

-

358

$10.790

-

-

-

Corphita

USA . 203 parts In-Stock

1+ parts

$11.421

100+ parts

-

1k+ parts

-

10k+ parts

-

203

$11.421

-

-

-

Netroflash

USA . 100 parts In-Stock

1+ parts

$11.535

100+ parts

$11.304

1k+ parts

-

10k+ parts

-

100

$11.535

$11.304

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 11,072 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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11,072

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-

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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5,000

-

-

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Microchip USA

USA . 4,142 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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4,142

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-

-

-

Overview

Experience lightning-fast data storage and retrieval with the MTFC8GAMALHT-AIT by Micron Technology. As a leader in flash memory technology, Micron guarantees top-notch quality and reliability. This NAND-type memory card offers a wide range of applications, from automotive to industrial settings. With a very thin profile and high clock frequency capability, this memory card is a game-changer for any project requiring fast data processing. Trust Micron for cutting-edge technology that will take your business to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Ideal for reducing weight and cost while providing durability to the product.

Surface Mount: YES

Enables easy and efficient mounting on circuit boards, saving assembly time.

Screening Level: AEC-Q100

Ensures high reliability and quality standards suitable for automotive applications.

Operating Mode: SYNCHRONOUS

Allows for optimized synchronous data transfer, enhancing overall performance.

Maximum Clock Frequency (fCLK): 200 MHz

Supports high-speed operations, offering fast data processing capabilities.

Memory Density: 68719476736 bit

Provides ample storage capacity for storing large amounts of data.

Technical Specifications

Flash Memory MTFC8GAMALHT-AIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

200 MHz

Minimum Data Retention Time:

5

JESD-30 Code:

R-PBGA-B100

Length:

18 mm

Memory Density:

68719476736 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

100

No. of Words:

8589934592 words

No. of Words Code:

8G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA100,10X17,40

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE

Parallel or Serial:

PARALLEL

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Type:

NAND TYPE

Width:

14 mm

Trade Compliance

MTFC8GAMALHT-AIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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