Loading...

MTFC32GAPALHT-AIT

Micron Technology

MTFC32GAPALHT-AIT by Micron Technology

Micron Technology's MTFC32GAPALHT-AIT is a 32GX8 NAND flash memory with 34359738368 words capacity. Operating at up to 200 MHz, it features a very thin profile grid array package suitable for industrial applications. With a temperature range of -40 to 85 °C, this CMOS technology memory supports parallel operation and has a min data retention time of 5 units.

Median Price

$28.410

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 1,000 parts In-Stock

1+ parts

$28.410

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

$28.410

-

-

-

Chip Stock

USA . 19,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

19,400

-

-

-

-

Vyrian

USA . 3,168 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,168

-

-

-

-

Digiode

USA . 2,420 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,420

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 650 parts In-Stock

1+ parts

$16.756

100+ parts

-

1k+ parts

-

10k+ parts

-

650

$16.756

-

-

-

Ampacity Inc.

Singapore . 1,241 parts In-Stock

1+ parts

$27.000

100+ parts

-

1k+ parts

-

10k+ parts

-

1,241

$27.000

-

-

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Microchip USA

USA . 4,845 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,845

-

-

-

-

Corphita

USA . 2,072 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,072

-

-

-

-

Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$27.842

1k+ parts

$26.989

10k+ parts

$26.421

2,000

-

$27.842

$26.989

$26.421

Overview

Experience unparalleled performance and reliability with the MTFC32GAPALHT-AIT by Micron Technology. As a leading manufacturer in the industry, Micron Technology delivers cutting-edge flash memory solutions that are perfect for a wide range of applications. This flash memory card offers exceptional value, benefits, and advantages to customers looking for high-quality storage options. Trust Micron Technology to provide you with a product that exceeds expectations and enhances your digital experience.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the product easy to handle and unlikely to break during usage.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on printed circuit boards, saving space and simplifying manufacturing processes.

Screening Level: AEC-Q100

This level of screening ensures that the product meets stringent automotive industry standards for reliability, making it suitable for automotive applications.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and synchronization, leading to improved performance and data transfer speeds.

No. of Terminals: 100

Having a sufficient number of terminals allows for versatile connectivity options, enabling the product to be integrated into a variety of systems.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE

The grid array style with a thin profile saves space and enhances thermal characteristics, making it ideal for compact and heat-sensitive applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions and ensure reliable performance in demanding situations.

Organization: 32GX8

The specific organization of 32 gigabytes organized in 8-bit widths offers ample storage capacity and efficient data retrieval capabilities.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the product to function effectively in extremely cold environments without compromising performance.

Maximum Clock Frequency (fCLK): 200 MHz

High clock frequency enables rapid data transfer rates, enhancing the overall speed and efficiency of the product.

Width: 14 mm

With a compact width, the product can fit into tight spaces and compact devices without sacrificing functionality.

Minimum Supply Voltage (Vsup): 2.7 V

The low minimum supply voltage ensures energy efficiency and compatibility with a wide range of power sources.

Type: NAND TYPE

NAND flash memory offers high density and cost-effective storage solutions, making it suitable for a variety of applications.

Length: 18 mm

The moderate length of the product provides a balance between compactness and functionality, making it versatile for different design requirements.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliable operation in industrial settings where temperature fluctuations are common, increasing the product's reliability.

Technology: CMOS

CMOS technology offers low power consumption and high speed, enhancing the efficiency and performance of the product.

Parallel or Serial: PARALLEL

Parallel operation allows for simultaneous data transfer, increasing throughput and improving overall system performance.

Terminal Form: BALL

Ball terminal form enables reliable connections and easy soldering, ensuring secure and stable electrical connections.

No. of Words: 34359738368 words

The large number of words available for storage indicates high memory capacity, suitable for applications requiring extensive data storage.

Memory Width: 8

An 8-bit memory width provides flexibility and compatibility with various data formats, enhancing the product's versatility.

Minimum Data Retention Time: 5

With a minimum data retention time of 5 years, the product ensures long-term reliability and data integrity for critical applications.

Terminal Pitch: 1 mm

A small terminal pitch allows for high-density mounting and space-saving design, making the product suitable for compact electronic devices.

No. of Words Code: 32G

The 32G code indicates a large storage capacity of 32 gigabytes, meeting the demand for high-capacity memory solutions.

Maximum Supply Voltage (Vsup): 3.6 V

With a high maximum supply voltage, the product can safely operate within a wide voltage range, ensuring compatibility with various power sources.

Memory Density: 274877906944 bit

High memory density offers ample storage capacity for large volumes of data, making the product suitable for memory-intensive applications.

Memory IC Type: FLASH CARD

The flash card memory IC type is commonly used for portable storage and data transfer, offering convenient and reliable memory solutions.

Technical Specifications

Flash Memory MTFC32GAPALHT-AIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

200 MHz

Minimum Data Retention Time:

5

JESD-30 Code:

R-PBGA-B100

Length:

18 mm

Memory Density:

274877906944 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

100

No. of Words:

34359738368 words

No. of Words Code:

32G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA100,10X17,40

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE

Parallel or Serial:

PARALLEL

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Type:

NAND TYPE

Width:

14 mm

Trade Compliance

MTFC32GAPALHT-AIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20