Loading...

MTFC16GAPALHT-AAT

Micron Technology

MTFC16GAPALHT-AAT by Micron Technology

MTFC16GAPALHT-AAT by Micron Technology is a 16GX8 NAND flash memory with 17179869184 words capacity. Operating at up to 200 MHz, it has a memory density of 137438953472 bit and supports industrial temperature grade applications. With a very thin profile package style, it is suitable for high-performance devices requiring fast data storage and retrieval.

Median Price

$21.360

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 45 parts In-Stock

1+ parts

$21.360

100+ parts

-

1k+ parts

-

10k+ parts

-

45

$21.360

-

-

-

Chip Stock

USA . 18,300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

18,300

-

-

-

-

Vyrian

USA . 5,068 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,068

-

-

-

-

Digiode

USA . 2,138 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,138

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 727 parts In-Stock

1+ parts

$15.665

100+ parts

-

1k+ parts

-

10k+ parts

-

727

$15.665

-

-

-

Ampacity Inc.

Singapore . 847 parts In-Stock

1+ parts

$17.000

100+ parts

-

1k+ parts

-

10k+ parts

-

847

$17.000

-

-

-

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$21.360

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

$21.360

-

-

-

Corphita

USA . 1,418 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,418

-

-

-

-

Microchip USA

USA . 494 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

494

-

-

-

-

Overview

Unlock the power of reliable data storage with Micron Technology's MTFC16GAPALHT-AAT flash memory. Designed with top-tier quality and cutting-edge technology, this product offers unparalleled performance and durability for a wide range of applications. Whether you're a tech-savvy professional or a casual user, this flash memory provides fast, secure, and efficient data storage solutions that can elevate your digital experience. Trust in Micron Technology to deliver exceptional value and benefits with every use of this innovative product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product suitable for various applications without adding unnecessary weight.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures reliable and consistent data transfer, improving overall performance of the flash memory.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature, this flash memory can withstand harsh environmental conditions, ensuring reliability in extreme temperatures.

Memory Width: 8

Having a memory width of 8 allows for efficient data transfer and storage, enhancing the overall speed and performance of the flash memory.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this flash memory energy-efficient and reliable for long-term use.

Technical Specifications

Flash Memory MTFC16GAPALHT-AAT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

200 MHz

Minimum Data Retention Time:

5

JESD-30 Code:

R-PBGA-B100

Length:

18 mm

Memory Density:

137438953472 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

100

No. of Words:

17179869184 words

No. of Words Code:

16G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA100,10X17,40

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE

Parallel or Serial:

PARALLEL

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Type:

NAND TYPE

Width:

14 mm

Trade Compliance

MTFC16GAPALHT-AAT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20