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MTFC128GAPALBH-AIT

Micron Technology

MTFC128GAPALBH-AIT by Micron Technology

Micron Technology's MTFC128GAPALBH-AIT is a 128GX8 NAND flash memory with 1.1mm seated height, operating at up to 200MHz clock frequency. Ideal for industrial applications, it offers a memory density of 1099511627776 bit and operates in an industrial temperature range from -40°C to 85°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 16,400 parts In-Stock

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Vyrian

USA . 2,730 parts In-Stock

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2,730

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Digiode

USA . 2,018 parts In-Stock

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2,018

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Nova Conductors

Japan . 57 parts In-Stock

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57

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Distributors (Availability)

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AZTECH Wire

Italy . 448 parts In-Stock

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$10.840

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448

$10.840

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Ampacity Inc.

Singapore . 899 parts In-Stock

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$20.000

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899

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Argo Parts USA

USA . 5,645 parts In-Stock

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Continental Prestige Electronics

USA . 1,177 parts In-Stock

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Microchip USA

USA . 444 parts In-Stock

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444

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Corphita

USA . 416 parts In-Stock

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416

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Unlock the power of reliable and high-quality flash memory technology with the MTFC128GAPALBH-AIT by Micron Technology. Designed with precision and expertise, this product offers unparalleled value and benefits to customers in various applications. Whether you're looking to boost performance in automotive electronics, consumer electronics, or industrial applications, this NAND type memory device delivers exceptional speed, efficiency, and durability. Trust in Micron's reputation for excellence and choose the MTFC128GAPALBH-AIT for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material makes the flash memory lightweight and durable, ideal for portable electronic devices.

Surface Mount: YES

Being surface mountable allows for easy and efficient assembly onto circuit boards, saving space and facilitating automated manufacturing processes.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures that data is transferred at a faster and more reliable rate, making this flash memory suitable for high-performance applications.

Maximum Clock Frequency (fCLK): 200 MHz

With a high maximum clock frequency of 200 MHz, this flash memory can process data quickly, enhancing overall system performance.

Technology: CMOS

The CMOS technology used in this flash memory results in low power consumption and high noise immunity, making it energy-efficient and reliable.

Minimum Data Retention Time: 5

The minimum data retention time of 5 years ensures that important data stored in the flash memory will be preserved for an extended period.

Technical Specifications

Flash Memory MTFC128GAPALBH-AIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

200 MHz

Minimum Data Retention Time:

5

JESD-30 Code:

R-PBGA-B153

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

1099511627776 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

137438953472 words

No. of Words Code:

128G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NAND TYPE

Width:

11.5 mm

Trade Compliance

MTFC128GAPALBH-AIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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