Loading...

IS25WP512M-RHLA3-TR

Integrated Silicon Solution

IS25WP512M-RHLA3-TR by Integrated Silicon Solution

IS25WP512M-RHLA3-TR by Integrated Silicon Solution is a 64MX8 NOR flash memory with 112 MHz clock frequency. Operating at 1.8V, it offers 100000 write/erase cycles and supports SPI serial bus type. Ideal for automotive applications due to AEC-Q100 screening level and -40 to 125 °C temperature range.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,673 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,673

-

-

-

-

Nova Conductors

Japan . 72 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

72

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 465 parts In-Stock

1+ parts

$15.004

100+ parts

-

1k+ parts

-

10k+ parts

-

465

$15.004

-

-

-

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

Aranea Global

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Overview

Unlock unparalleled performance and reliability with the IS25WP512M-RHLA3-TR by Integrated Silicon Solution. This cutting-edge flash memory device offers seamless integration into automotive applications, ensuring optimal functionality and durability in any environment. With a high endurance of 100,000 write/erase cycles and a maximum clock frequency of 112 MHz, this NOR type memory IC delivers lightning-fast operation and dependable data storage. Upgrade your system today with the superior quality and advanced technology of ISSI's IS25WP512M-RHLA3-TR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the internal components of the flash memory, ensuring long-term reliability.

Surface Mount: YES

Being surface mountable makes the installation and integration of the flash memory easy and efficient.

Screening Level: AEC-Q100

AEC-Q100 screening ensures that the flash memory meets stringent automotive industry standards for quality and reliability.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster and more efficient data transfer, enhancing the overall performance of the flash memory.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a nominal supply voltage of 1.8V ensures compatibility with a wide range of systems while maintaining energy efficiency.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, the flash memory can withstand high temperature environments, making it suitable for automotive applications.

Organization: 64MX8

The 64MX8 organization provides a high memory density, allowing for storage of a large amount of data in a compact form factor.

Write Protection: HARDWARE/SOFTWARE

Hardware and software write protection features ensure the security and integrity of the stored data, preventing unauthorized access or modification.

Maximum Clock Frequency (fCLK): 112 MHz

Support for a maximum clock frequency of 112 MHz enables fast data access and transfer speeds, improving overall system performance.

Memory Density: 536870912 bit

With a high memory density of 536870912 bits, the flash memory can store large amounts of data, making it ideal for applications requiring high storage capacity.

Technical Specifications

Flash Memory IS25WP512M-RHLA3-TR attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Maximum Clock Frequency (fCLK):

112 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PBGA-B24

Length:

8 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

24

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA24,5X5,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

1.8

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00026 Amp

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

6 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

IS25WP512M-RHLA3-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20