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MTFC8GAMALGT-AIT

Micron Technology

MTFC8GAMALGT-AIT by Micron Technology

MTFC8GAMALGT-AIT by Micron Technology is a NAND flash memory with 8GX8 organization, operating at up to 200 MHz. It features a very thin profile, fine pitch package style suitable for industrial applications. With a memory density of 68719476736 bits and AEC-Q100 screening level, it offers reliable performance in automotive electronics.

Median Price

$12.970

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$12.970

100+ parts

-

1k+ parts

-

10k+ parts

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150

$12.970

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Chip Stock

USA . 19,600 parts In-Stock

1+ parts

-

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19,600

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Vyrian

USA . 7,546 parts In-Stock

1+ parts

-

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7,546

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-

-

Digiode

USA . 916 parts In-Stock

1+ parts

-

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916

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,367 parts In-Stock

1+ parts

$2.000

100+ parts

-

1k+ parts

-

10k+ parts

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1,367

$2.000

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AZTECH Wire

Italy . 552 parts In-Stock

1+ parts

$9.162

100+ parts

-

1k+ parts

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552

$9.162

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Bastille Electronics

Australia . 92 parts In-Stock

1+ parts

$12.970

100+ parts

$12.322

1k+ parts

-

10k+ parts

$11.543

92

$12.970

$12.322

-

$11.543

Corphita

USA . 1,133 parts In-Stock

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1,133

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Microchip USA

USA . 100 parts In-Stock

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100

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Overview

Upgrade your devices with the MTFC8GAMALGT-AIT by Micron Technology, a cutting-edge flash memory solution that offers unparalleled quality and reliability. Manufactured by a trusted industry leader, this product is designed for a wide range of applications, providing seamless performance and efficient data storage. With advanced features and a compact design, this flash memory device ensures faster data transfer speeds and enhanced durability, making it the ideal choice for tech-savvy customers seeking top-notch performance. Experience the value and benefits of Micron Technology's innovative technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the flash memory, making it suitable for various applications.

Surface Mount: YES

Allows for easy and secure mounting on circuit boards, saving space and facilitating automated assembly.

Operating Mode: SYNCHRONOUS

Enables synchronized data transfers, improving performance and efficiency of the flash memory.

Maximum Clock Frequency (fCLK): 200 MHz

Supports high-speed operations, enhancing the overall speed and responsiveness of the flash memory.

Minimum Supply Voltage (Vsup): 2.7 V

Requires low power consumption for operation, leading to energy efficiency and longer battery life in devices.

Memory Density: 68719476736 bit

Offers high storage capacity, allowing for the storage of large amounts of data in a compact form factor.

Technical Specifications

Flash Memory MTFC8GAMALGT-AIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

200 MHz

Minimum Data Retention Time:

5

JESD-30 Code:

R-PBGA-B153

Length:

13 mm

Memory Density:

68719476736 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

8589934592 words

No. of Words Code:

8G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Screening Level:

AEC-Q100

Maximum Seated Height:

.8 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Type:

NAND TYPE

Width:

11.5 mm

Trade Compliance

MTFC8GAMALGT-AIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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