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Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.

Flash Memory

Available Parts 1,676

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
SST26VF016BT-80E/SN70SVAO by Microchip Technology

SST26VF016BT-80E/SN70SVAO

Microchip Technology

SST26VF016BT-80E/SN70SVAO by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock freq., SPI serial bus. Ideal for automotive applications with AEC-Q100 screening, -40 to 125 °C operating temp range, and 100000 write/erase cycles endurance.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

125 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

3

AEC-Q100; TS 16949

1.75 mm

SPI

.000045 Amp

25 mA

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

SST25PF040C-40E/MF18GVAO by Microchip Technology

SST25PF040C-40E/MF18GVAO

Microchip Technology

SST25PF040C-40E/MF18GVAO by Microchip Technology is a NOR type flash memory with 512Kx8 organization, operating at 3.3V and up to 40MHz clock frequency. Ideal for automotive applications due to AEC-Q100 screening level, it offers 100000 write/erase cycles and operates in a wide temperature range from -40°C to 125°C.

40 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

6 mm

4194304 bit

FLASH

8

1

1

8

524288 words

512K

SYNCHRONOUS

125 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3.3

AEC-Q100

.8 mm

SPI

.00001 Amp

15 mA

3.6 V

2.3 V

3.3

YES

CMOS

AUTOMOTIVE

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

SOFTWARE

SST25PF040C-40V/MF18GVAO by Microchip Technology

SST25PF040C-40V/MF18GVAO

Microchip Technology

SST25PF040C-40V/MF18GVAO by Microchip: 512KX8 NOR Flash Memory, 40MHz clock freq., SPI serial bus. Ideal for industrial applications with -40 to 105 °C temp range, AEC-Q100 screening level.

40 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

6 mm

4194304 bit

FLASH

8

1

1

8

524288 words

512K

SYNCHRONOUS

105 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3.3

AEC-Q100

.8 mm

SPI

.00001 Amp

15 mA

3.6 V

2.3 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

SOFTWARE

SST25PF040C-40V/SN18GVAO by Microchip Technology

SST25PF040C-40V/SN18GVAO

Microchip Technology

SST25PF040C-40V/SN18GVAO by Microchip: 512KX8 NOR Flash Memory with 40 MHz clock, SPI interface. Ideal for industrial applications requiring 100000 Write/Erase cycles, operating b/w -40 to 105 °C. Small outline package, synchronous operation, and AEC-Q100 screening level make it versatile for various projects.

40 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

4194304 bit

FLASH

8

1

1

8

524288 words

512K

SYNCHRONOUS

105 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

3.3

AEC-Q100

1.75 mm

SPI

.00001 Amp

15 mA

3.6 V

2.3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

SOFTWARE

SST25PF040CT-40E/SN18GVAO by Microchip Technology

SST25PF040CT-40E/SN18GVAO

Microchip Technology

SST25PF040CT-40E/SN18GVAO by Microchip: NOR Flash Memory, 512KX8 organization, SPI serial bus type. Ideal for automotive applications with AEC-Q100 screening level, operating at -40 to 125 °C, and offering 100000 Write/Erase Cycles endurance.

40 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

4194304 bit

FLASH

8

1

1

8

524288 words

512K

SYNCHRONOUS

125 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

3.3

AEC-Q100

1.75 mm

SPI

.00001 Amp

15 mA

3.6 V

2.3 V

3.3

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

SOFTWARE

SST25PF040CT-40V/NP18GVAO by Microchip Technology

SST25PF040CT-40V/NP18GVAO

Microchip Technology

SST25PF040CT-40V/NP18GVAO by Microchip: 512KX8 NOR Flash Memory, 3.3V Vsup, SPI Interface. Ideal for industrial applications requiring high endurance with 100000 Write/Erase Cycles and operating temperature range of -40 to 105 °C. Small outline package with 0.6 mm seated height and very thin profile suitable for space-constrained designs.

40 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

3 mm

4194304 bit

FLASH

8

1

1

8

524288 words

512K

SYNCHRONOUS

105 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.12,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3.3

AEC-Q100

.6 mm

SPI

.00001 Amp

15 mA

3.6 V

2.3 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOR TYPE

2 mm

SOFTWARE

MTFC16GAKAEDQ-AATTR by Micron Technology

MTFC16GAKAEDQ-AATTR

Micron Technology

FLASH CARD; Programming Voltage (V): 2.7; JESD-609 Code: e4; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier;

e4

FLASH CARD

260

2.7

Gold (Au) - with Nickel (Ni) barrier

30

SST39VF3201C-70-4I-B3KE-T-VAO by Microchip Technology

SST39VF3201C-70-4I-B3KE-T-VAO

Microchip Technology

SST39VF3201C-70-4I-B3KE-T-VAO by Microchip: 2MX16 NOR Flash Memory, 3V, -40 to 85°C, AEC-Q100 for industrial applications. Features 8 sectors of sizes 4K and 32K words with a max access time of 70ns. Offers common flash interface, endurance of 100k cycles, and operates in asynchronous mode.

70 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

8 mm

33554432 bit

FLASH

16

1

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3

YES

AEC-Q100

1.2 mm

4K,32K

.00005 Amp

45 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

MT25QL256ABA1EW9-0AAT by Micron Technology

MT25QL256ABA1EW9-0AAT

Micron Technology

Micron Technology's MT25QL256ABA1EW9-0AAT is a 256Mbit flash memory with synchronous operation, 133MHz clock frequency, and 3V nominal voltage. Ideal for industrial applications, it offers high memory density of 268435456 bits in a small outline package with very thin profile.

133 MHz

R-PDSO-N8

8 mm

268435456 bit

FLASH

1

1

8

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3

AEC-Q100

.8 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

6 mm

N25Q128A13EF8A0FTR by Micron Technology

N25Q128A13EF8A0FTR

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Memory Density: 134217728 bit;

108 MHz

R-PDSO-N8

8 mm

134217728 bit

FLASH

1

1

8

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

6 mm

N25Q032A13ESCA0FTR by Micron Technology

N25Q032A13ESCA0FTR

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; No. of Words: 33554432 words;

108 MHz

R-PDSO-G8

4.9 mm

33554432 bit

FLASH

1

1

8

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

1.75 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

MT29F2G16ABAEAWP:ETR by Micron Technology

MT29F2G16ABAEAWP:ETR

Micron Technology

Micron Technology's MT29F2G16ABAEAWP:ETR is a 3.3V SLC NAND flash memory with 128Mx16 organization and 2147483648-bit memory density. Operating in asynchronous mode, it has a temperature range of 0-70°C and is suitable for commercial applications requiring high-speed parallel memory access.

R-PDSO-G48

18.4 mm

2147483648 bit

FLASH

16

1

48

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

SLC NAND TYPE

12 mm

W25Q128JWSIM by Winbond Electronics

W25Q128JWSIM

Winbond Electronics

Winbond Electronics' W25Q128JWSIM is a 16MX8 NOR flash memory with 133 MHz clock frequency, SPI serial bus type. It operates at -40 to 85 °C, has 100000 Write/Erase Cycles endurance, and is ideal for industrial applications requiring high-speed data storage.

133 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

5.28 mm

134217728 bit

FLASH

8

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

1.8

2.16 mm

SPI

.00005 Amp

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5.28 mm

HARDWARE/SOFTWARE

THGBMJG6C1LBAIL by Kioxia Holdings

THGBMJG6C1LBAIL

Kioxia Holdings

Kioxia Holdings' THGBMJG6C1LBAIL is an 8GX8 flash memory IC with 68719476736-bit memory density. It operates b/w -25°C to 85°C, with a voltage range of 2.7V to 3.6V. This rectangular GRID ARRAY package is surface-mountable and ideal for applications requiring high-speed data storage in compact devices.

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

BGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY

3.6 V

2.7 V

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

11 mm

SST26VF020A-104I/SN by Microchip Technology

SST26VF020A-104I/SN

Microchip Technology

SST26VF020A-104I/SN by Microchip: 2MX1 flash memory with 104 MHz clock freq, SPI serial bus type. Ideal for industrial applications requiring 100000 write/erase cycles and 3V programming voltage. Operating temp range -40 to 85 °C.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

2097152 bit

FLASH

1

1

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3

AEC-Q100

1.75 mm

SPI

.00002 Amp

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

N25Q064A13E1240E by Micron Technology

N25Q064A13E1240E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 8;

108 MHz

NO

20

COMMON

R-PBGA-B24

8 mm

67108864 bit

FLASH

8

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

TOTEM POLE

PLASTIC/EPOXY

TBGA

BGA24, 5X5, 40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

SPI

.0001 Amp

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

HARDWARE/SOFTWARE

MTFC4GACAJCN-4MITTR by Micron Technology

MTFC4GACAJCN-4MITTR

Micron Technology

Micron Technology's MTFC4GACAJCN-4MITTR is a 4GX8 MLC NAND flash memory with 34359738368-bit density. Operating at up to 52 MHz, it features a very thin profile and fine pitch grid array package suitable for industrial applications. With a wide temperature range (-40 to 85 °C), this synchronous memory offers high performance in compact dimensions.

52 MHz

NO

NO

R-PBGA-B153

e1

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

NO

MLC NAND TYPE

11.5 mm

SST26VF016B-80E/SM by Microchip Technology

SST26VF016B-80E/SM

Microchip Technology

SST26VF016B-80E/SM by Microchip: 16Mx1 NOR Flash Memory with 80MHz clock, SPI serial bus for automotive applications. Features 100K write/erase cycles, operates at -40 to 125°C, and has a small outline package style.

80 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

5.26 mm

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

125 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

2.5

AEC-Q100

2.03 mm

SPI

.000025 Amp

25 mA

3.6 V

2.3 V

2.5

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

NOR TYPE

5.25 mm

HARDWARE/SOFTWARE

SST25PF040C-40E/MF by Microchip Technology

SST25PF040C-40E/MF

Microchip Technology

SST25PF040C-40E/MF by Microchip: NOR Flash Memory, 4Mx1 organization, SPI serial bus type. Operating at 3.3V with 40MHz clock frequency for automotive applications requiring high endurance and low standby current.

40 MHz

20

100000 Write/Erase Cycles

S-PDSO-N10

3 mm

4194304 bit

FLASH

1

1

1

10

4194304 words

4M

SYNCHRONOUS

125 Cel

-40 Cel

4MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC10,.12,20

SQUARE

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3.3

TS 16949

1 mm

SPI

.00001 Amp

15 mA

3.6 V

2.3 V

3.3

YES

CMOS

AUTOMOTIVE

NO LEAD

.5 mm

DUAL

NOR TYPE

3 mm

SOFTWARE

SST25PF040C-40E/SN by Microchip Technology

SST25PF040C-40E/SN

Microchip Technology

SST25PF040C-40E/SN by Microchip: 3.3V NOR Flash Memory with 4Mx1 organization, SPI interface, and 40MHz clock frequency. Ideal for automotive applications due to TS16949 screening level and -40°C to 125°C operating temperature range. Compact size (4.9mm x 3.9mm) with low standby current (0.00001A).

40 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

4194304 bit

FLASH

1

1

1

8

4194304 words

4M

SYNCHRONOUS

125 Cel

-40 Cel

4MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

3.3

TS 16949

1.75 mm

SPI

.00001 Amp

15 mA

3.6 V

2.3 V

3.3

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

SOFTWARE

MTSD256AHC6MS-1WT by Micron Technology

MTSD256AHC6MS-1WT

Micron Technology

FLASH CARD; Package Code: DIE; Package Shape: RECTANGULAR; Terminal Form: NO LEAD; Package Body Material: UNSPECIFIED; Package Style (Meter): UNCASED CHIP;

R-XUUC-N

2199023255552 bit

FLASH CARD

8

1

274877906944 words

256G

SYNCHRONOUS

85 Cel

-25 Cel

256GX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

SERIAL

YES

CMOS

NO LEAD

UPPER

NOR TYPE

MTSD064AHC6MS-1WT by Micron Technology

MTSD064AHC6MS-1WT

Micron Technology

Micron Technology's MTSD064AHC6MS-1WT is a 64GX8 NOR type flash memory chip with 549755813888-bit density. Operating synchronously at -25 to 85 °C, it offers 68719476736 words capacity for various applications requiring high-speed serial memory solutions.

R-XUUC-N

549755813888 bit

FLASH CARD

8

1

68719476736 words

64G

SYNCHRONOUS

85 Cel

-25 Cel

64GX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

SERIAL

YES

CMOS

NO LEAD

UPPER

NOR TYPE

MTSD032AHC6MS-1WT by Micron Technology

MTSD032AHC6MS-1WT

Micron Technology

MTSD032AHC6MS-1WT by Micron Technology is a 32GX8 NOR flash memory chip with 274877906944-bit density. Operating in synchronous mode, it has a memory width of 8 and operates serially. Ideal for applications requiring high-speed data storage and retrieval at temperatures ranging from -25°C to 85°C.

R-XUUC-N

274877906944 bit

FLASH CARD

8

1

34359738368 words

32G

SYNCHRONOUS

85 Cel

-25 Cel

32GX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

SERIAL

YES

CMOS

NO LEAD

UPPER

NOR TYPE

MTSD128AHC6MS-1WT by Micron Technology

MTSD128AHC6MS-1WT

Micron Technology

FLASH CARD; Package Code: DIE; Package Shape: RECTANGULAR; Terminal Form: NO LEAD; Terminal Position: UPPER; Technology: CMOS;

R-XUUC-N

1099511627776 bit

FLASH CARD

8

1

137438953472 words

128G

SYNCHRONOUS

85 Cel

-25 Cel

128GX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

SERIAL

YES

CMOS

NO LEAD

UPPER

NOR TYPE

W25Q512JVFIQ by Winbond Electronics

W25Q512JVFIQ

Winbond Electronics

W25Q512JVFIQ by Winbond Electronics is a 64MX8 NOR type flash memory with 133 MHz clock frequency, ideal for industrial applications. It operates at 3.3V, has 100000 write/erase cycles endurance, and uses SPI serial bus type. With a compact size of 10.31mm x 7.49mm x 2.64mm, it offers high performance in a small outline package for various electronic devices.

ALSO OPERATES AT 2.7VMIN @104MHZ

4

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.31 mm

536870912 bit

FLASH

8

1

16

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

3.3

2.64 mm

SPI

.00006 Amp

40 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

7.49 mm

HARDWARE/SOFTWARE

W25Q64JWZPIM by Winbond Electronics

W25Q64JWZPIM

Winbond Electronics

W25Q64JWZPIM by Winbond Electronics is a NOR flash memory with 8MX8 organization, SPI serial bus type, and 133 MHz clock frequency. It is ideal for industrial applications requiring high endurance with 100K write/erase cycles and operates at temperatures ranging from -40 to 85 °C.

4

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

6 mm

67108864 bit

FLASH

8

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

.8 mm

SPI

.000025 Amp

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5 mm

HARDWARE/SOFTWARE

MX25U12832FZ4I02 by Macronix

MX25U12832FZ4I02

Macronix

Macronix MX25U12832FZ4I02 is a NOR flash memory with 16MX8 organization, SPI serial bus type, and 133 MHz clock frequency. It is ideal for applications requiring high endurance, such as IoT devices and industrial automation systems.

133 MHz

20

100000 Write/Erase Cycles

R-XDSO-N8

8 mm

134217728 bit

FLASH

8

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

3-STATE

UNSPECIFIED

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8

.8 mm

SPI

.000005 Amp

25 mA

2 V

1.65 V

1.8

YES

CMOS

NO LEAD

1.27 mm

DUAL

NOR TYPE

6 mm

HARDWARE/SOFTWARE

GD25Q32CTIG by Gigadevice Semiconductor

GD25Q32CTIG

Gigadevice Semiconductor

GD25Q32CTIG by Gigadevice Semiconductor is a 32Mbit NOR Flash Memory with SPI interface. Operating at 120MHz, it offers 100K Write/Erase cycles and supports hardware/software write protection. Ideal for industrial applications, it has a temperature range of -40 to 85°C and low standby current of 0.000005Amp.

BOTTOM/TOP

120 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

33554432 bit

FLASH

1

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

2.7

1.75 mm

SPI

.000005 Amp

25 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

GD25Q32CSIG by Gigadevice Semiconductor

GD25Q32CSIG

Gigadevice Semiconductor

GD25Q32CSIG by Gigadevice Semiconductor is a 32M NOR Flash Memory with SPI serial bus, 120MHz clock frequency, and 100000 write/erase cycles. Ideal for industrial applications requiring high-speed synchronous operation and reliable data storage in a compact small outline package.

BOTTOM/TOP

120 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

5.28 mm

33554432 bit

FLASH

1

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

2.7

2.16 mm

SPI

.000005 Amp

25 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

5.23 mm

HARDWARE/SOFTWARE

SST25VF080B-50-4I-ZCE by Microchip Technology

SST25VF080B-50-4I-ZCE

Microchip Technology

SST25VF080B-50-4I-ZCE by Microchip Technology is a serial flash memory with 8Mx1 organization and 8388608-bit memory density. It operates in synchronous mode with a max clock frequency of 50 MHz. This flash memory is commonly used in industrial applications for its high endurance of 100000 write/erase cycles.

50 MHz

100

100000 Write/Erase Cycles

S-PBGA-B16

2 mm

8388608 bit

FLASH

1

1

1

16

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

3-STATE

PLASTIC/EPOXY

VFBGA

BGA16,4X2,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

.4 mm

SPI

.00003 Amp

30 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOR TYPE

2 mm

HARDWARE/SOFTWARE

MX25U51245GBFI0A by Macronix

MX25U51245GBFI0A

Macronix

Macronix MX25U51245GBFI0A is a 64MX8 NOR flash memory with 166 MHz clock frequency, 1.8V programming voltage, and SPI serial bus type. Ideal for applications requiring high-speed synchronous operation, such as automotive electronics and industrial control systems.

166 MHz

20

100000 Write/Erase Cycles

R-PBGA-B68

536870912 bit

FLASH

8

1

68

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA56,8X10,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

1.8

.44 mm

SPI

.00005 Amp

40 mA

2 V

1.65 V

1.8

YES

CMOS

BALL

.4 mm

BOTTOM

NOR TYPE

HARDWARE/SOFTWARE

MTFC128GAPALBH-AAT by Micron Technology

MTFC128GAPALBH-AAT

Micron Technology

MTFC128GAPALBH-AAT by Micron Technology is a 128GX8 NAND flash memory with 1099511627776 bit density. Operating in synchronous mode, it has a terminal pitch of 0.5 mm and supports parallel communication. This thin profile package is ideal for applications requiring high-speed data storage and retrieval at temperatures ranging from -40 to 105 °C.

R-PBGA-B153

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

105 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

1.1 mm

3.6 V

2.7 V

YES

CMOS

GULL WING

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC16GAPALGT-AIT by Micron Technology

MTFC16GAPALGT-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Organization: 16GX8;

200 MHz

5

R-PBGA-B153

13 mm

137438953472 bit

FLASH CARD

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q100

.8 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC8GAKAJCN-4MITTR by Micron Technology

MTFC8GAKAJCN-4MITTR

Micron Technology

Micron Technology's MTFC8GAKAJCN-4MITTR is a 8GX8 MLC NAND flash memory with 68719476736 bit density. It operates in synchronous mode at up to 52 MHz clock frequency, suitable for industrial applications. The package style is grid array with very thin profile and fine pitch, making it ideal for compact electronic devices.

52 MHz

NO

NO

R-PBGA-B153

e1

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NO

MLC NAND TYPE

11.5 mm

MTFC16GAPALHT-AIT by Micron Technology

MTFC16GAPALHT-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;

200 MHz

5

R-PBGA-B100

18 mm

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

AEC-Q100

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

14 mm

MX25U25643GM2I00 by Macronix

MX25U25643GM2I00

Macronix

FLASH;

FLASH

THGBMJG8C2LBAIL by Kioxia Holdings

THGBMJG8C2LBAIL

Kioxia Holdings

Kioxia Holdings' THGBMJG8C2LBAIL is a Flash Memory with 32GX8 organization, 274877906944 bit memory density, and CMOS technology. It features a package style of GRID ARRAY, operates b/w -25 to 85 °C, and has a terminal pitch of 0.5 mm. Ideal for applications requiring high-speed data storage in compact devices.

R-PBGA-B153

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

85 Cel

-25 Cel

32GX8

PLASTIC/EPOXY

BGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY

3.6 V

2.7 V

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

11 mm

THGBMJG8C4LBAU8 by Kioxia Holdings

THGBMJG8C4LBAU8

Kioxia Holdings

Kioxia Holdings THGBMJG8C4LBAU8 is a 32GX8 flash memory with 274877906944 bit density. It operates b/w -40 to 105 °C, suitable for industrial applications. With a terminal pitch of 0.5 mm and package style GRID ARRAY, it offers high-speed data storage in compact devices.

R-PBGA-B153

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

BGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

11 mm

MT29F8G08ADBDAH4-AAT:D by Micron Technology

MT29F8G08ADBDAH4-AAT:D

Micron Technology

MT29F8G08ADBDAH4-AAT:D by Micron Technology is an 1GX8 SLC NAND flash memory with 105°C max and -40°C min operating temp. It offers 1073741824 words, 8589934592 bit density, and INDUSTRIAL grade. Ideal for applications requiring high reliability in harsh environments.

8589934592 bit

FLASH

8

1073741824 words

1G

105 Cel

-40 Cel

1GX8

INDUSTRIAL

SLC NAND TYPE

MT29F2G08ABAGAWP-IT:GTR by Micron Technology

MT29F2G08ABAGAWP-IT:GTR

Micron Technology

Micron Technology's MT29F2G08ABAGAWP-IT:GTR is an industrial-grade SLC NAND flash memory with 256MX8 organization, operating from -40 to 85 °C. It offers a memory density of 2147483648 bits and is suitable for applications requiring high reliability in harsh environments.

2147483648 bit

FLASH

8

1

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

CMOS

INDUSTRIAL

SLC NAND TYPE

SQF-SHMU2-128G-SBE by Advantech

SQF-SHMU2-128G-SBE

Advantech

Advantech SQF-SHMU2-128G-SBE is a 128GX8 MLC NAND flash module with 30000 Write/Erase Cycles endurance. Operating at -40 to 85 °C, it uses SERIAL mode with 3.3V programming voltage. Ideal for applications requiring high memory density and reliability in MICROELECTRONIC ASSEMBLY package style.

10

30000 Write/Erase Cycles

R-XDMA-N52

1099511627776 bit

FLASH MODULE

8

1

137438953472 words

128G

ASYNCHRONOUS

85 Cel

-40 Cel

128GX8

UNSPECIFIED

DMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

3.3

3.3

NO

CMOS

NO LEAD

.8 mm

DUAL

MLC NAND TYPE

FEMC016GTTG7-T13-27 by Flexxon Global

FEMC016GTTG7-T13-27

Flexxon Global

FEMC016GTTG7-T13-27 by Flexxon Global is a SLC NAND flash memory with 16GX8 organization and 137.4Gb density. It operates in industrial temperature range (-40 to 85°C) and has AEC-Q100 screening level for automotive applications. The package is rectangular, surface mountable, with 100 terminals at a nominal voltage of 3.3V.

R-PBGA-B100

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

SLC NAND TYPE

FEMC032GTTE7-T13-26 by Flexxon Global

FEMC032GTTE7-T13-26

Flexxon Global

FEMC032GTTE7-T13-26 by Flexxon Global is a 32GX8 MLC NAND flash memory with 274877906944-bit density. Operating at -25 to 85 °C, it has AEC-Q100 screening for automotive applications. With 3.3V supply and 100 terminals in a rectangular package, it's ideal for high-density data storage needs.

R-PBGA-B100

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

85 Cel

-25 Cel

32GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

MLC NAND TYPE

FEMC064GTTE7-T14-46 by Flexxon Global

FEMC064GTTE7-T14-46

Flexxon Global

FEMC064GTTE7-T14-46 by Flexxon Global is a Flash Memory with 64GX8 organization, MLC NAND type, and 549755813888 bit memory density. It operates b/w -25 to 85 °C, suitable for automotive applications meeting AEC-Q100 standards. With 153 terminals and CMOS technology, it offers high performance in a compact rectangular package.

R-PBGA-B153

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

85 Cel

-25 Cel

64GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

MLC NAND TYPE

FEMC004GTTG7-T13-17 by Flexxon Global

FEMC004GTTG7-T13-17

Flexxon Global

FEMC004GTTG7-T13-17 by Flexxon Global is a SLC NAND flash memory with 4GX8 organization and 4G word code. It operates at industrial temperature grade (-40 to 85 °C) and has a memory density of 34.36Gb. It is suitable for applications requiring high reliability and endurance, such as automotive electronics or industrial control systems.

R-PBGA-B100

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

SLC NAND TYPE

FEMC008GTTE7-T13-17 by Flexxon Global

FEMC008GTTE7-T13-17

Flexxon Global

FEMC008GTTE7-T13-17 by Flexxon Global is an SLC NAND flash memory with 8GX8 organization, 3.3V supply voltage, and 85°C max operating temp. Ideal for automotive applications due to AEC-Q100 screening level and TS 16949 certification, offering high reliability in harsh environments.

R-PBGA-B100

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

SLC NAND TYPE

FEMC016GTTG7-T13-16 by Flexxon Global

FEMC016GTTG7-T13-16

Flexxon Global

FEMC016GTTG7-T13-16 by Flexxon Global is a 16GX8 MLC NAND flash card with 137.4Tb memory density, suitable for industrial applications. It operates at -40 to 85°C, has 100 terminals in a rectangular package, and meets AEC-Q100 standards.

R-PBGA-B100

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

MLC NAND TYPE

FEMC004GTTG7-T13-16 by Flexxon Global

FEMC004GTTG7-T13-16

Flexxon Global

FEMC004GTTG7-T13-16 by Flexxon Global is a 3.3V MLC NAND Flash Memory with 4GX8 organization, 100 terminals, and 34359738368 bit memory density. It operates in industrial temperature range (-40 to 85 °C) and is suitable for applications requiring high-density storage in automotive electronics or industrial devices.

R-PBGA-B100

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

MLC NAND TYPE