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MTSD064AHC6MS-1WT

Micron Technology

MTSD064AHC6MS-1WT by Micron Technology

Micron Technology's MTSD064AHC6MS-1WT is a 64GX8 NOR type flash memory chip with 549755813888-bit density. Operating synchronously at -25 to 85 °C, it offers 68719476736 words capacity for various applications requiring high-speed serial memory solutions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,763 parts In-Stock

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7,763

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Chip Stock

USA . 4,860 parts In-Stock

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4,860

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Digiode

USA . 1,181 parts In-Stock

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1,181

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 961 parts In-Stock

1+ parts

$9.570

100+ parts

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961

$9.570

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Continental Prestige Electronics

USA . 2,740 parts In-Stock

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2,740

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Argo Parts USA

USA . 2,716 parts In-Stock

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2,716

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Corphita

USA . 1,299 parts In-Stock

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1,299

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Formix International (Excess)

India . 50 parts In-Stock

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50

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Overview

Unleash the power of cutting-edge technology with the MTSD064AHC6MS-1WT by Micron Technology. As a leader in flash memory solutions, Micron delivers top-quality products that redefine the industry standards. The MTSD064AHC6MS-1WT is designed for seamless integration in various applications, offering unparalleled performance and reliability. Experience lightning-fast data transfer speeds and enhanced storage capacity like never before. Elevate your projects with Micron's innovative flash memory technology and unlock endless possibilities.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto circuit boards, making this flash memory product suitable for mass production.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures that data is transferred at a consistent and predictable rate, enhancing overall performance and reliability.

Package Style (Meter): UNCASED CHIP

The unencased chip package style offers a compact and lightweight design, making it ideal for applications where space-saving is crucial.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this flash memory can withstand demanding environmental conditions, ensuring durability and longevity.

Organization: 64GX8

The 64GX8 organization provides a balance between capacity and data transfer speed, making this flash memory suitable for a wide range of applications.

Type: NOR TYPE

NOR type flash memory offers fast read speeds and random access capabilities, making it ideal for applications where quick data retrieval is essential.

Memory Density: 549755813888 bit

With a high memory density, this flash memory product can store a large amount of data in a compact form factor, making it ideal for data-intensive applications.

Memory IC Type: FLASH CARD

The Flash Card memory IC type is commonly used in portable electronic devices such as cameras and smartphones, making this flash memory product versatile and widely compatible.

Technical Specifications

Flash Memory MTSD064AHC6MS-1WT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-XUUC-N

Memory Density:

549755813888 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Words:

68719476736 words

No. of Words Code:

64G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

64GX8

Package Body Material:

UNSPECIFIED

Package Code:

DIE

Package Shape:

Package Style (Meter):

UNCASED CHIP

Parallel or Serial:

SERIAL

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Type:

NOR TYPE

Trade Compliance

MTSD064AHC6MS-1WT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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