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MT25QL256ABA1EW9-0AAT

Micron Technology

MT25QL256ABA1EW9-0AAT by Micron Technology

Micron Technology's MT25QL256ABA1EW9-0AAT is a 256Mbit flash memory with synchronous operation, 133MHz clock frequency, and 3V nominal voltage. Ideal for industrial applications, it offers high memory density of 268435456 bits in a small outline package with very thin profile.

Median Price

$9.000

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 85 parts In-Stock

1+ parts

$9.000

100+ parts

$5.400

1k+ parts

-

10k+ parts

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85

$9.000

$5.400

-

-

Chip Stock

USA . 9,500 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

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9,500

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-

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Sensible Micro Corp

USA . 6,150 parts In-Stock

1+ parts

-

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-

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6,150

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-

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Vyrian

USA . 5,713 parts In-Stock

1+ parts

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5,713

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-

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Digiode

USA . 2,012 parts In-Stock

1+ parts

-

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2,012

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-

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ACDS - Activité Composants Distribution Service

France . 128 parts In-Stock

1+ parts

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128

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Dan-Mar Components

USA . 85 parts In-Stock

1+ parts

-

100+ parts

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85

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Nova Conductors

Japan . 57 parts In-Stock

1+ parts

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57

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 695 parts In-Stock

1+ parts

$4.432

100+ parts

-

1k+ parts

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10k+ parts

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695

$4.432

-

-

-

Aztec Data Supply Inc.

USA . 60 parts In-Stock

1+ parts

$4.788

100+ parts

-

1k+ parts

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60

$4.788

-

-

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AZTECH Wire

Italy . 412 parts In-Stock

1+ parts

$17.526

100+ parts

-

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412

$17.526

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Ampacity Inc.

Singapore . 968 parts In-Stock

1+ parts

$21.000

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968

$21.000

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QUARKTWIN TECHNOLOGY LTD

USA . 18,021 parts In-Stock

1+ parts

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18,021

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

1+ parts

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15,000

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RC Electronics

USA . 8,800 parts In-Stock

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8,800

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Perfect Parts

USA . 4,301 parts In-Stock

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4,301

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A-Z Elektronik GmbH

Germany . 4,000 parts In-Stock

1+ parts

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4,000

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Microchip USA

USA . 3,411 parts In-Stock

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3,411

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Corphita

USA . 2,212 parts In-Stock

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2,212

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Continental Prestige Electronics

USA . 1,886 parts In-Stock

1+ parts

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1,886

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-

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Argo Parts USA

USA . 1,600 parts In-Stock

1+ parts

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1,600

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-

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1,000

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-

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Futuretech Components

Singapore . 488 parts In-Stock

1+ parts

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100+ parts

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488

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-

Overview

Experience seamless and reliable data storage with the MT25QL256ABA1EW9-0AAT by Micron Technology. This cutting-edge flash memory device offers unparalleled quality and performance, making it the perfect choice for a wide range of applications. With its compact design and advanced features, this product provides customers with value, efficiency, and peace of mind. Trust Micron Technology to deliver top-of-the-line technology that meets your storage needs effortlessly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the flash memory, ensuring longevity and reliability.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, making it suitable for mass production and integration into various devices.

Screening Level: AEC-Q100

Meets automotive industry standards for quality and reliability, making it ideal for use in automotive applications where durability is crucial.

Operating Mode: SYNCHRONOUS

Enhances the data transfer speed and efficiency of the flash memory, providing quick access to stored information.

Nominal Supply Voltage / Vsup (V): 3

Optimal supply voltage ensures stable performance and efficient operation of the flash memory.

Maximum Operating Temperature: 105 °C

Can withstand high temperatures, making it suitable for use in various environments and industrial applications.

Memory Density: 268435456 bit

High memory density allows for storing a large amount of data in a compact size, offering ample storage capacity for various applications.

Technical Specifications

Flash Memory MT25QL256ABA1EW9-0AAT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

133 MHz

JESD-30 Code:

R-PDSO-N8

Length:

8 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

3

Screening Level:

AEC-Q100

Maximum Seated Height:

.8 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6 mm

Trade Compliance

MT25QL256ABA1EW9-0AAT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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