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MT29F2G08ABAGAWP-IT:GTR

Micron Technology

MT29F2G08ABAGAWP-IT:GTR by Micron Technology

Micron Technology's MT29F2G08ABAGAWP-IT:GTR is an industrial-grade SLC NAND flash memory with 256MX8 organization, operating from -40 to 85 °C. It offers a memory density of 2147483648 bits and is suitable for applications requiring high reliability in harsh environments.

Median Price

$7.880

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

MT29F2G08ABAGAWP-IT:GTR by Micron Technology
Compare Share

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 8 parts In-Stock

1+ parts

$7.880

100+ parts

-

1k+ parts

-

10k+ parts

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8

$7.880

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 992 parts In-Stock

1+ parts

$2.518

100+ parts

-

1k+ parts

-

10k+ parts

-

992

$2.518

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-

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Vyrian

USA . 251 parts In-Stock

1+ parts

$2.650

100+ parts

-

1k+ parts

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251

$2.650

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Chip Stock

USA . 5,748 parts In-Stock

1+ parts

-

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5,748

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NAC Semi

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$2.470

10k+ parts

$2.290

3,000

-

-

$2.470

$2.290

Sensible Micro Corp

USA . 1,831 parts In-Stock

1+ parts

-

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1,831

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ComSIT Distribution GmbH

Germany . 1,373 parts In-Stock

1+ parts

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1,373

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

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500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 415 parts In-Stock

1+ parts

$1.720

100+ parts

$1.677

1k+ parts

$1.668

10k+ parts

-

415

$1.720

$1.677

$1.668

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Ampacity Inc.

Singapore . 238 parts In-Stock

1+ parts

$2.250

100+ parts

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238

$2.250

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Corphita

USA . 1,657 parts In-Stock

1+ parts

$2.385

100+ parts

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1k+ parts

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10k+ parts

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1,657

$2.385

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Authorized Procurement Solutions

USA . 19,000 parts In-Stock

1+ parts

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19,000

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Perfect Parts

USA . 5,600 parts In-Stock

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5,600

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

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1,000

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Overview

Discover the cutting-edge MT29F2G08ABAGAWP-IT:GTR by Micron Technology, a top-tier flash memory solution designed for industrial-grade applications. With a reputation for high-quality products, Micron Technology delivers reliable and durable memory solutions that ensure optimal performance in a wide range of environments. Perfect for industrial settings, this SLC NAND type flash memory offers superior memory density and fast operating speeds, making it ideal for critical data storage needs. Upgrade your systems with Micron Technology's MT29F2G08ABAGAWP-IT:GTR for unparalleled value and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material ensures durability and protection for the flash memory chip, making it a reliable choice for various industrial applications.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent and flexible access to memory locations, providing fast and efficient data retrieval and storage capabilities.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this flash memory chip can withstand harsh environmental conditions, making it suitable for industrial use.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures reliable performance even in extreme cold conditions, making this flash memory chip versatile and durable.

Type: SLC NAND TYPE

Being a Single-Level Cell (SLC) NAND type flash memory chip, it offers fast read and write speeds, high endurance, and low power consumption, making it ideal for high-performance applications.

Technology: CMOS

Built using Complementary Metal-Oxide-Semiconductor (CMOS) technology, this flash memory chip delivers low power consumption, high speed, and excellent noise immunity, making it a reliable and efficient choice.

Memory Density: 2147483648 bit

With a high memory density of 2147483648 bits, this flash memory chip provides ample storage capacity for data-intensive applications, ensuring efficient data management and processing.

Technical Specifications

Flash Memory MT29F2G08ABAGAWP-IT:GTR attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX8

Package Body Material:

PLASTIC/EPOXY

Technology:

CMOS

Temperature Grade:

Type:

SLC NAND TYPE

Trade Compliance

MT29F2G08ABAGAWP-IT:GTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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