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MT29F8G08ADBDAH4-AAT:D

Micron Technology

MT29F8G08ADBDAH4-AAT:D by Micron Technology

MT29F8G08ADBDAH4-AAT:D by Micron Technology is an 1GX8 SLC NAND flash memory with 105°C max and -40°C min operating temp. It offers 1073741824 words, 8589934592 bit density, and INDUSTRIAL grade. Ideal for applications requiring high reliability in harsh environments.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

USA . 4,945 parts In-Stock

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Vyrian

USA . 4,122 parts In-Stock

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Digiode

USA . 406 parts In-Stock

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406

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Aztec Data Supply Inc.

USA . 230 parts In-Stock

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$4.905

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$4.905

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Semicontronic

India . 1,537 parts In-Stock

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$13.000

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$12.675

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$12.610

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$12.610

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Corohmni

South Africa . 173 parts In-Stock

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$13.280

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$13.280

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AZTECH Wire

Italy . 844 parts In-Stock

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$14.575

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Ampacity Inc.

Singapore . 1,159 parts In-Stock

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$21.000

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Continental Prestige Electronics

USA . 3,099 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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RC Electronics

USA . 1,828 parts In-Stock

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Argo Parts USA

USA . 1,731 parts In-Stock

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Perfect Parts

USA . 1,411 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Corphita

USA . 566 parts In-Stock

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Kepictronics

USA . 466 parts In-Stock

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466

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Microchip USA

USA . 244 parts In-Stock

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244

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iodParts Technologies Inc.

India . 150 parts In-Stock

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150

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Overview

Unlock the power of reliable and high-quality flash memory with Micron Technology's MT29F8G08ADBDAH4-AAT:D. Known for their cutting-edge technology and superior performance, Micron Technology offers a product that exceeds industry standards. Ideal for industrial applications, this SLC NAND type memory provides exceptional durability and efficiency. Stay ahead of the competition with this innovative solution that delivers value, benefits, and advantages to customers looking for top-notch memory solutions. Trust Micron Technology for all your memory needs.

Feature Benefit Bullets

Maximum Operating Temperature: 105 °C

This high maximum operating temperature ensures that the flash memory can function reliably even in extreme industrial environments.

Organization: 1GX8

The organization of 1GX8 means that the memory is arranged in 1 Gigabyte modules with a width of 8 bits, providing a high level of data storage capacity and speed.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C allows the flash memory to operate efficiently in a wide range of temperatures, increasing its versatility and reliability.

Type: SLC NAND TYPE

Being SLC NAND type, this flash memory offers higher durability and faster data transfer speeds compared to other types, making it ideal for industrial applications that require high performance and reliability.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures that the flash memory is designed to withstand harsh operating conditions typically found in industrial environments, making it a durable and dependable choice for industrial applications.

No. of Words: 1073741824 words

With a large number of words (data blocks) supported, this flash memory offers high storage capacity and efficient data handling capabilities, making it suitable for storing large amounts of data in industrial settings.

Memory Width: 8

The memory width of 8 bits allows for faster data transfer rates and processing speeds, making this flash memory an efficient and high-performance storage solution.

No. of Words Code: 1G

The 1G code indicates that this flash memory can support up to 1 Gigabyte of data, offering ample storage space for industrial applications that require large amounts of data storage.

Memory Density: 8589934592 bit

With a high memory density of 8589934592 bits, this flash memory can store a large amount of data in a compact form factor, making it a space-efficient and cost-effective storage solution.

Memory IC Type: FLASH

Being a Flash memory IC type, this product offers non-volatile memory storage capabilities, allowing data to be retained even when power is turned off, making it a reliable and convenient storage solution.

Technical Specifications

Flash Memory MT29F8G08ADBDAH4-AAT:D attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Memory Density:

8589934592 bit

Memory IC Type:

Memory Width:

8

No. of Words:

1073741824 words

No. of Words Code:

1G

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1GX8

Temperature Grade:

Type:

SLC NAND TYPE

Trade Compliance

MT29F8G08ADBDAH4-AAT:D Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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