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MT29F8G08ADBFAH4-AAT:F

Micron Technology

MT29F8G08ADBFAH4-AAT:F by Micron Technology

Micron Technology's MT29F8G08ADBFAH4-AAT:F is a 1GX8 SLC NAND flash memory with 8589934592-bit density. Operating at 1.8V, it has an industrial temperature grade of -40 to 105°C. Suitable for applications requiring high-speed and reliable data storage in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

MT29F8G08ADBFAH4-AAT:F by Micron Technology
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Chip Stock

USA . 5,273 parts In-Stock

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Vyrian

USA . 596 parts In-Stock

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Digiode

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Nova Conductors

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Ampacity Inc.

Singapore . 605 parts In-Stock

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$18.000

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Continental Prestige Electronics

USA . 2,661 parts In-Stock

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Corphita

USA . 877 parts In-Stock

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Argo Parts USA

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Aranea Global

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Overview

Experience the superior quality of Micron Technology's MT29F8G08ADBFAH4-AAT:F Flash Memory, designed for industrial applications requiring reliable performance in extreme conditions. With a package style of GRID ARRAY and a nominal supply voltage of 1.8V, this SLC NAND type memory offers unparalleled durability and efficiency. Trust in Micron's renowned expertise in memory technology to provide your business with the reliability and value you need to stay ahead in today's competitive market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides strength and durability to the product, ensuring it can withstand harsh conditions.

Surface Mount: YES

Being surface mountable makes installation easier and more convenient, saving time and effort.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for non-blocking data transfers and efficient multitasking capabilities.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low supply voltage of 1.8V helps in conserving power and extending battery life.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature, this product can function reliably even in hot environments.

Organization: 1GX8

This organization scheme ensures efficient data storage and retrieval, enhancing overall performance.

Minimum Operating Temperature: -40 °C

The wide operating temperature range allows the product to function in extreme cold conditions without issues.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and provides better heat dissipation.

Type: SLC NAND TYPE

SLC NAND technology offers high reliability, fast data transfer speeds, and longer lifespan compared to other memory types.

Programming Voltage (V): 1.8

Low programming voltage of 1.8V reduces power consumption and heat generation during write operations.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature tolerance ensures the product can operate in rugged industrial environments.

Technology: CMOS

CMOS technology provides low power consumption, high speed, and compatibility with various digital systems.

Terminal Form: BALL

Ball terminal form offers better solder joint reliability and mechanical strength for secure connections.

No. of Words: 1073741824 words

Large number of words supported allows for storing vast amounts of data, making it suitable for data-intensive applications.

Memory Width: 8

A memory width of 8 bits enables efficient data processing and compatibility with standard architectures.

No. of Words Code: 1G

The 1G code signifies a high memory capacity, ideal for demanding applications that require extensive storage.

Memory Density: 8589934592 bit

High memory density of 8589934592 bits allows for storing large volumes of data in a compact form factor.

Memory IC Type: FLASH

Flash memory offers fast read and write speeds, high reliability, and non-volatile storage, making it a popular choice for many applications.

Technical Specifications

Flash Memory MT29F8G08ADBFAH4-AAT:F attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

X-PBGA-B

Memory Density:

8589934592 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Words:

1073741824 words

No. of Words Code:

1G

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

1.8

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

SLC NAND TYPE

Trade Compliance

MT29F8G08ADBFAH4-AAT:F Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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