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Onsemi Diodes & Rectifiers 646

Diodes & Rectifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
NRVTSB40200CTT4G by Onsemi

NRVTSB40200CTT4G

Onsemi

NRVTSB40200CTT4G by Onsemi is a Schottky rectifier diode with 200V reverse test voltage and 20A max output current. It features common cathode configuration, matte tin terminal finish, and is suitable for efficiency applications. Operating temperature ranges from -55 to 150°C, making it ideal for various electronic devices.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.45 V

R-PSSO-G2

e3

1

250 A

2

1

2

150 Cel

-55 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

200 V

100 uA

200 V

YES

SCHOTTKY

MATTE TIN

GULL WING

SINGLE

30

FFSB0665B by Onsemi

FFSB0665B

Onsemi

The Onsemi FFSB0665B is a Schottky rectifier diode with a max reverse voltage of 650V and forward current of 8A. Its package style is small outline, making it suitable for high-efficiency applications. With a max power dissipation of 61W and operating temperature range from -55 to 175°C, it offers reliable performance in various electronic circuits.

HIGH RELIABILITY, PD-CASE

EFFICIENCY

CATHODE

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.7 V

TO-263AB

R-PSSO-G2

e3

1

45 A

1

1

2

175 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

61 W

650 V

40 uA

650 V

YES

SCHOTTKY

MATTE TIN

GULL WING

SINGLE

30

FFSP2065B by Onsemi

FFSP2065B

Onsemi

FFSP2065B by Onsemi is a Schottky rectifier diode with 650V reverse test voltage and 22.5A output current. It has a max power dissipation of 150W, making it suitable for high-efficiency applications. The diode operates b/w -55 °C to 175°C temperature range and features a matte tin terminal finish.

HIGH RELIABILITY, PD-CASE

EFFICIENCY

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.7 V

TO-220AC

R-PSFM-T2

e3

84 A

1

1

2

175 Cel

-55 Cel

22.5 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

150 W

650 V

40 uA

650 V

NO

SCHOTTKY

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

FFSP1065B by Onsemi

FFSP1065B

Onsemi

FFSP1065B by Onsemi is a Schottky rectifier diode with 650V reverse test voltage and 11A output current. It has a max power dissipation of 75W, making it suitable for high-efficiency applications. The diode is designed in a single configuration with a rectangular package shape and flange mount style for through-hole terminals.

HIGH RELIABILITY, PD-CASE

EFFICIENCY

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.7 V

TO-220AC

R-PSFM-T2

e3

45 A

1

1

2

175 Cel

-55 Cel

11 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

75 W

650 V

40 uA

650 V

NO

SCHOTTKY

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

MURF1620CTGS by Onsemi

MURF1620CTGS

Onsemi

MURF1620CTGS by Onsemi is a common cathode diode with ultra-fast recovery power. It has a max reverse recovery time of 0.035 us, max output current of 8A, and a max reverse test voltage of 200V. Ideal for applications requiring high-speed rectification in electronic circuits.

FREE WHEELING DIODE

ULTRA FAST RECOVERY POWER

ISOLATED

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.975 V

TO-220AB

R-PSFM-T3

e3

100 A

2

1

3

150 Cel

-65 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

200 V

5 uA

.035 us

200 V

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NRVTS560ETFSTWG by Onsemi

NRVTS560ETFSTWG

Onsemi

NRVTS560ETFSTWG by Onsemi is a Schottky rectifier diode with 60V reverse test voltage and 5A max output current. It is ideal for efficiency applications, operates at -55 °C, and has a peak reflow temp of 260°C.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

60 V

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.68 V

S-PDSO-F8

e3

1

120 A

1

1

8

-55 Cel

5 A

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

AEC-Q101

60 V

50 uA

60 V

YES

SCHOTTKY

MATTE TIN

NO LEAD

DUAL

30

PCFFS40120AF by Onsemi

PCFFS40120AF

Onsemi

The Onsemi PCFFS40120AF is a Schottky rectifier diode with 1200V reverse test voltage and 61A output current. It operates b/w -55 °C to 175°C, making it suitable for high-efficiency applications. With a max power dissipation of 682W, this surface-mount diode offers superior performance in various electronic systems.

EFFICIENCY

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.75 V

S-XUUC-N1

270 A

1

1

1

175 Cel

-55 Cel

61 A

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

682 W

1200 V

200 uA

1200 V

YES

SCHOTTKY

NO LEAD

UPPER

NOT SPECIFIED

PCFFS50120AF by Onsemi

PCFFS50120AF

Onsemi

RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;

PD-CASE

EFFICIENCY

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.75 V

S-XUUC-N1

280 A

1

1

1

175 Cel

-55 Cel

77 A

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

736 W

1200 V

200 uA

1200 V

YES

SCHOTTKY

NO LEAD

UPPER

NOT SPECIFIED

RHRP15120-F102 by Onsemi

RHRP15120-F102

Onsemi

RHRP15120-F102 by Onsemi is a single rectifier diode with a reverse test voltage of 1200V and max output current of 15A. It features hyperfast soft recovery technology, 0.075us reverse recovery time, and 100uA reverse current. Ideal for applications requiring high power dissipation up to 100W in temperatures ranging from -65°C to 175°C.

FREE WHEELING DIODE

HYPERFAST SOFT RECOVERY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

3.2 V

TO-220AC

R-PSFM-T2

e3

200 A

1

1

2

175 Cel

-65 Cel

15 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

100 W

1200 V

100 uA

.075 us

1200 V

NO

AVALANCHE

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

RHRP1560-F102 by Onsemi

RHRP1560-F102

Onsemi

RHRP1560-F102 by Onsemi is a single rectifier diode with a reverse recovery time of 0.04 us and max reverse current of 100 uA. It operates in hyper ultra-fast soft recovery applications, with a max forward voltage of 2.1 V and output current of 15 A.

FREE WHEELING DIODE, HIGH RELIABILITY, PD-CASE

HYPER ULTRA FAST SOFT RECOVERY

CATHODE

SINGLE

SILICON NITRIDE

RECTIFIER DIODE

2.1 V

TO-220AC

R-PSFM-T2

e3

200 A

1

1

2

175 Cel

-65 Cel

15 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

100 W

600 V

100 uA

.04 us

600 V

NO

AVALANCHE

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

RHRP30120-F102 by Onsemi

RHRP30120-F102

Onsemi

RHRP30120-F102 by Onsemi is a single rectifier diode with a reverse test voltage of 1200V and max output current of 30A. It features hyperfast soft recovery technology, with a max reverse recovery time of 0.085us. Ideal for applications requiring high power dissipation up to 125W in environments ranging from -65°C to 175°C.

FREE WHEELING DIODE, PD-CASE

HYPERFAST SOFT RECOVERY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

3.2 V

TO-220AC

R-PSFM-T2

e3

300 A

1

1

2

175 Cel

-65 Cel

30 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

125 W

1200 V

250 uA

.085 us

1200 V

NO

AVALANCHE

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

RHRP3060-F102 by Onsemi

RHRP3060-F102

Onsemi

RHRP3060-F102 by Onsemi is a single rectifier diode with a reverse test voltage of 600V and max output current of 30A. It features an ultra-fast soft recovery time of 0.045us, making it ideal for hyper applications. With a max power dissipation of 125W and operating temperature range from -65 to 175°C, this diode is suitable for high-power electronic circuits.

FREE WHEELING DIODE, HIGH RELIABILITY

HYPER ULTRA FAST SOFT RECOVERY

SINGLE

SILICON NITRIDE

RECTIFIER DIODE

2.1 V

TO-220AC

R-PSFM-T2

e3

325 A

1

1

2

175 Cel

-65 Cel

30 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

125 W

600 V

250 uA

.045 us

600 V

NO

AVALANCHE

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

RHRP8120-F102 by Onsemi

RHRP8120-F102

Onsemi

RHRP8120-F102 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.07 us and a max output current of 8 A. It is designed for hyperfast soft recovery applications, featuring a max reverse test voltage of 1200 V and operating temperature range from -65 to 175 °C.

FREE WHEELING DIODE

HYPERFAST SOFT RECOVERY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

3.2 V

TO-220AC

R-PSFM-T2

e3

100 A

1

1

2

175 Cel

-65 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

75 W

1200 V

100 uA

.07 us

1200 V

NO

AVALANCHE

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

RURD620CCS9A-F085P by Onsemi

RURD620CCS9A-F085P

Onsemi

RURD620CCS9A-F085P by Onsemi is a common cathode diode with 2 elements, featuring ultra-fast soft recovery technology. It has a max reverse recovery time of 0.03 us and can handle a max output current of 3 A. Ideal for applications requiring high-speed rectification in electronic circuits.

FREE WHEELING DIODE

ULTRA FAST SOFT RECOVERY

CATHODE

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1 V

TO-252AA

R-PSSO-G2

e3

1

60 A

2

1

2

175 Cel

-65 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

45 W

AEC-Q101

200 V

100 uA

.03 us

200 V

YES

AVALANCHE

MATTE TIN

GULL WING

SINGLE

30

RURD660S9A-F085P by Onsemi

RURD660S9A-F085P

Onsemi

RURD660S9A-F085P by Onsemi is a single rectifier diode with a max reverse recovery time of 0.083 us and a max output current of 6 A. It is designed for ultra-fast soft recovery power applications, operating b/w -55 to 175 °C, with a peak reflow temperature of 260 C.

FREE WHEELING DIODE

ULTRA FAST SOFT RECOVERY POWER

SINGLE

SILICON NITRIDE

RECTIFIER DIODE

1.5 V

TO-252AA

R-PSSO-G2

e3

1

60 A

1

1

2

175 Cel

-55 Cel

6 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

600 V

100 uA

.083 us

600 V

YES

AVALANCHE

MATTE TIN

GULL WING

SINGLE

30

RURP15100-F085P by Onsemi

RURP15100-F085P

Onsemi

RURP15100-F085P by Onsemi is a single rectifier diode with a max reverse recovery time of 0.45 us and a max output current of 15 A. It is designed for ultra-fast soft recovery applications, featuring a max reverse test voltage of 1000 V and operating temperatures ranging from -55 to 175 °C.

FREE WHEELING DIODE

ULTRA FAST SOFT RECOVERY

CATHODE

SINGLE

SILICON NITRIDE

RECTIFIER DIODE

1.8 V

TO-220AC

R-PSFM-T2

e3

45 A

1

1

2

175 Cel

-55 Cel

15 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

AEC-Q101

1000 V

100 uA

.45 us

1000 V

NO

AVALANCHE

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

FFSH3065B by Onsemi

FFSH3065B

Onsemi

FFSH3065B by Onsemi is a Schottky rectifier diode with 650V reverse test voltage and 37A output current. It has a max power dissipation of 268W, making it suitable for high-efficiency applications. With a temperature range from -55 to 175°C, this diode is ideal for various industrial uses.

HIGH RELIABILITY, PD-CASE

EFFICIENCY

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.7 V

TO-247

R-PSFM-T2

e3

110 A

1

1

2

175 Cel

-55 Cel

37 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

268 W

AEC-Q101

650 V

40 uA

650 V

NO

SCHOTTKY

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

FFSP2065BDN-F085 by Onsemi

FFSP2065BDN-F085

Onsemi

FFSP2065BDN-F085 by Onsemi is a Schottky rectifier diode with 2 elements, offering a max output current of 10A and a reverse test voltage of 650V. It is commonly used for efficiency applications due to its high power dissipation capability of 60W and operating temperature range from -55°C to 175°C.

PD-CASE

EFFICIENCY

COMMON CATHODE, 2 ELEMENTS

SILICON CARBIDE

RECTIFIER DIODE

1.7 V

TO-220AB

R-PSFM-T3

e3

42 A

2

1

3

175 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

60 W

AEC-Q101

650 V

40 uA

650 V

NO

SCHOTTKY

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

PCFFS2065AF by Onsemi

PCFFS2065AF

Onsemi

The Onsemi PCFFS2065AF is a Schottky rectifier diode with 650V reverse test voltage and 20A max output current. Ideal for efficiency applications, it operates up to 175 °C, has a max forward voltage of 1.75V, and features surface mount packaging in a square shape.

HIGH RELIABILITY

EFFICIENCY

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.75 V

S-XUUC-N1

1

1

1

175 Cel

20 A

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

650 V

200 uA

650 V

YES

SCHOTTKY

NO LEAD

UPPER

NOT SPECIFIED

PCFFS30120AF by Onsemi

PCFFS30120AF

Onsemi

The Onsemi PCFFS30120AF is a Schottky rectifier diode with 1200V reverse test voltage and 30A max output current. Ideal for efficiency applications, it operates up to 175 °C, has a VF of 1.75V, and features surface mount configuration in a square package shape.

HIGH RELIABILITY

EFFICIENCY

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.75 V

S-XUUC-N1

1

1

1

175 Cel

30 A

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

1200 V

200 uA

1200 V

YES

SCHOTTKY

NO LEAD

UPPER

NOT SPECIFIED

SBRD81035CTLG-VF01 by Onsemi

SBRD81035CTLG-VF01

Onsemi

SBRD81035CTLG-VF01 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.56V and a max output current of 5A. It is commonly used in power applications, offering a min breakdown voltage of 35V and operating temperatures ranging from -55°C to 150°C.

FREE WHEELING DIODE

POWER

35 V

CATHODE

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.56 V

R-PSSO-G2

e3

1

50 A

2

1

2

150 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

35 V

2000 uA

35 V

YES

SCHOTTKY

MATTE TIN

GULL WING

SINGLE

30

NRVBS260T3G-VF01 by Onsemi

NRVBS260T3G-VF01

Onsemi

NRVBS260T3G-VF01 by Onsemi is a Schottky rectifier diode with 60V reverse test voltage and 200uA max reverse current. It is a single-config, surface-mount device in a small outline package, suitable for power applications. With a max forward voltage of 0.63V and output current of 2A, it operates b/w -55°C to 125°C, making it ideal for various electronic designs.

FREE WHEELING DIODE

POWER

SINGLE

SILICON

RECTIFIER DIODE

.63 V

R-PDSO-J2

e3

1

60 A

1

1

2

125 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

60 V

200 uA

60 V

YES

SCHOTTKY

MATTE TIN

J BEND

DUAL

30

NRVBA340T3G-VF01 by Onsemi

NRVBA340T3G-VF01

Onsemi

NRVBA340T3G-VF01 by Onsemi is a Schottky rectifier diode with 40V reverse test voltage, 300uA max reverse current, and 3A max output current. Ideal for power applications, it operates b/w -55 to 150 °C and features a small outline package style for surface mount assembly.

FREE WHEELING DIODE

POWER

SINGLE

SILICON

RECTIFIER DIODE

.45 V

R-PDSO-J2

e3

1

100 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

40 V

300 uA

40 V

YES

SCHOTTKY

MATTE TIN

J BEND

DUAL

30

FFSH20120A-F085 by Onsemi

FFSH20120A-F085

Onsemi

FFSH20120A-F085 by Onsemi is a Schottky rectifier diode with 1200V reverse test voltage and 30A output current. It has a max power dissipation of 273W, making it suitable for high-efficiency applications. With a temperature range from -55 to 175°C, this diode is ideal for various industrial uses.

HIGH RELIABILITY, PD-CASE

EFFICIENCY

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.75 V

TO-247AB

R-PSFM-T2

e3

135 A

1

1

2

175 Cel

-55 Cel

30 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

273 W

AEC-Q101

1200 V

200 uA

1200 V

NO

SCHOTTKY

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

FFSH20120ADN-F085 by Onsemi

FFSH20120ADN-F085

Onsemi

FFSH20120ADN-F085 by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max reverse voltage of 1200V. It has a max output current of 15A and power dissipation of 150W. Ideal for efficiency applications, operating b/w -55 °C to 175°C.

HIGH RELIABILITY, PD-CASE

EFFICIENCY

CATHODE

COMMON CATHODE, 2 ELEMENTS

SILICON CARBIDE

RECTIFIER DIODE

1.75 V

TO-247AB

R-PSFM-T3

96 A

2

1

3

175 Cel

-55 Cel

15 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

150 W

AEC-Q101

1200 V

200 uA

1200 V

NO

SCHOTTKY

MATTE TIN

THROUGH-HOLE

SINGLE

FFSH2065BDN-F085 by Onsemi

FFSH2065BDN-F085

Onsemi

FFSH2065BDN-F085 by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max reverse voltage of 650V. It has a max output current of 10A and power dissipation of 65W. Ideal for efficiency applications, operating b/w -55 to 175°C.

HIGH RELIABILITY, PD-CASE

EFFICIENCY

CATHODE

COMMON CATHODE, 2 ELEMENTS

SILICON CARBIDE

RECTIFIER DIODE

1.7 V

TO-247AB

R-PSFM-T3

e3

42 A

2

1

3

175 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

65 W

AEC-Q101

650 V

40 uA

650 V

NO

SCHOTTKY

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NRVTS8H120EMFST3G by Onsemi

NRVTS8H120EMFST3G

Onsemi

NRVTS8H120EMFST3G by Onsemi is a Schottky rectifier diode with 120V reverse voltage, 8A output current, and 0.85V forward voltage. It operates b/w -55 to 175 °C for efficiency applications. The package is small outline plastic with matte tin finish and dual terminals.

FREE WHEELING DIODE , LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.85 V

R-PDSO-F5

e3

1

150 A

1

1

5

175 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

120 V

50 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

NRVTS8H120EMFST1G by Onsemi

NRVTS8H120EMFST1G

Onsemi

NRVTS8H120EMFST1G by Onsemi is a Schottky rectifier diode with a max output current of 8A and max repetitive peak reverse voltage of 120V. It operates b/w -55 to 175 °C, making it suitable for high-efficiency applications. This single-configured diode comes in a small outline package with matte tin terminal finish.

FREE WHEELING DIODE , LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.85 V

R-PDSO-F5

e3

1

150 A

1

1

5

175 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

120 V

50 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

NSR05T304MXT5G by Onsemi

NSR05T304MXT5G

Onsemi

NSR05T304MXT5G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.435V and output current of 0.5A. It has a reverse test voltage of 30V, making it suitable for applications requiring fast switching speeds and low power dissipation in electronic circuits. The diode's compact chip carrier package and surface mount configuration make it ideal for space-constrained designs where high efficiency is crucial.

LOW LEAKAGE CURRENT

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

.435 V

R-PBCC-N2

e4

2.2 A

1

1

2

85 Cel

-55 Cel

.5 A

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

.48 W

30 V

75 uA

.015 us

30 V

YES

SCHOTTKY

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

BOTTOM

NBRS2H100T3G-VF01 by Onsemi

NBRS2H100T3G-VF01

Onsemi

NBRS2H100T3G-VF01 by Onsemi is a Schottky rectifier diode with 100V reverse test voltage and 2A max output current. Ideal for power applications, it operates b/w -65 to 175 °C with peak reflow temp of 260C. Its small outline package makes it suitable for surface mount designs.

FREE WHEELING DIODE

POWER

SINGLE

SILICON

RECTIFIER DIODE

.79 V

R-PDSO-J2

e3

1

130 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

100 V

8 uA

100 V

YES

SCHOTTKY

MATTE TIN

J BEND

DUAL

30

SBRS81100T3G-VF01 by Onsemi

SBRS81100T3G-VF01

Onsemi

SBRS81100T3G-VF01 by Onsemi is a Schottky rectifier diode with a max reverse voltage of 100V and forward voltage of 0.75V, ideal for power applications. It has a max output current of 2A and low reverse current of 500uA, making it suitable for high-power circuits. The diode's small outline package and dual terminals with matte tin finish offer easy surface-mount installation in various electronic devices.

FREE WHEELING DIODE

POWER

SINGLE

SILICON

RECTIFIER DIODE

.75 V

R-PDSO-J2

e3

1

50 A

1

1

2

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

100 V

500 uA

100 V

YES

SCHOTTKY

MATTE TIN

J BEND

DUAL

30

FFSH10120ADN-F155 by Onsemi

FFSH10120ADN-F155

Onsemi

FFSH10120ADN-F155 by Onsemi is a Schottky rectifier diode with 1200V reverse test voltage and 8.1A output current. It features common cathode configuration, suitable for efficiency applications with a max power dissipation of 83W. The diode operates b/w -55°C to 175°C temperature range, making it ideal for high-power rectification needs.

HIGH RELIABILITY, PD-CASE

EFFICIENCY

CATHODE

COMMON CATHODE, 2 ELEMENTS

SILICON CARBIDE

RECTIFIER DIODE

1.75 V

TO-247AB

R-PSFM-T3

e3

42 A

2

1

3

175 Cel

-55 Cel

8.1 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

83 W

1200 V

200 uA

1200 V

NO

SCHOTTKY

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NRVHPRS1JFA by Onsemi

NRVHPRS1JFA

Onsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

R-PDSO-F2

e3

1

30 A

1

1

2

150 Cel

-55 Cel

.8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

600 V

5 uA

.25 us

600 V

YES

MATTE TIN

FLAT

DUAL

30

NCD225E75F8M1 by Onsemi

NCD225E75F8M1

Onsemi

NCD225E75F8M1 by Onsemi is a single diode with fast soft recovery, ideal for high-power applications. It features a max output current of 225A, reverse test voltage of 750V, and max reverse recovery time of 0.223us. This rectifier diode operates b/w -40 to 175 °C and meets AEC-Q101 standards.

FAST SOFT RECOVERY

750 V

SINGLE

SILICON

RECTIFIER DIODE

1.95 V

R-XXUC-N2

1

1

2

175 Cel

-40 Cel

225 A

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

AEC-Q101

750 V

30 uA

.223 us

750 V

YES

NO LEAD

UNSPECIFIED

NRVS2G by Onsemi

NRVS2G

Onsemi

NRVS2G by Onsemi is a single rectifier diode with a max reverse recovery time of 2 us and max output current of 2 A. It operates in temperatures ranging from -65 to 150 °C and has a peak repetitive reverse voltage of 400 V. Ideal for applications requiring high power dissipation and low forward voltage drop.

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

1.15 V

DO-214AA

R-PDSO-C2

e3

1

50 A

1

1

2

150 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

2.35 W

AEC-Q101; UL CERTIFIED

400 V

1 uA

2 us

YES

MATTE TIN

C BEND

DUAL

30

NRVS2J by Onsemi

NRVS2J

Onsemi

NRVS2J by Onsemi is a single rectifier diode with a max reverse recovery time of 2 us and max output current of 2 A. It operates in temperatures ranging from -65 to 150 °C and has a peak repetitive reverse voltage of 600 V. Ideal for applications requiring high power dissipation and low forward voltage drop.

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

1.15 V

DO-214AA

R-PDSO-C2

e3

1

50 A

1

1

2

150 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

2.35 W

AEC-Q101; UL CERTIFIED

600 V

1 uA

2 us

YES

MATTE TIN

C BEND

DUAL

30

NRVS2K by Onsemi

NRVS2K

Onsemi

NRVS2K by Onsemi is a single rectifier diode with a max reverse recovery time of 2 us and max output current of 2 A. It operates in temperatures ranging from -65 to 150 °C and has a peak repetitive reverse voltage of 800 V. Ideal for applications requiring high power dissipation and low forward voltage drop.

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

1.15 V

DO-214AA

R-PDSO-C2

e3

1

50 A

1

1

2

150 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

2.35 W

AEC-Q101; UL CERTIFIED

800 V

1 uA

2 us

YES

MATTE TIN

C BEND

DUAL

30

NRVS1GHE by Onsemi

NRVS1GHE

Onsemi

NRVS1GHE by Onsemi is a single rectifier diode with a max reverse recovery time of 0.782 us and max forward voltage of 1.1 V. It is designed for efficiency applications, operating b/w -55 to 175 °C, with a peak reflow temperature of 260 C.

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

R-PDSO-F2

e3

1

20 A

1

1

2

175 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

400 V

1 uA

.782 us

YES

MATTE TIN

FLAT

DUAL

30

NRVBSS23FA by Onsemi

NRVBSS23FA

Onsemi

NRVBSS23FA by Onsemi is a Schottky rectifier diode with a max reverse recovery time of 0.01 us and max output current of 2A. It is designed for efficiency applications, operating b/w -55 to 125 °C, with a peak reflow temperature of 260 °C.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.5 V

R-PDSO-F2

e3

1

50 A

1

1

2

125 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

30 V

400 uA

.01 us

30 V

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

NRVBSS22FA by Onsemi

NRVBSS22FA

Onsemi

The Onsemi NRVBSS22FA is a Schottky rectifier diode with a max reverse recovery time of 0.01 us and a max output current of 2A. It operates efficiently at temperatures ranging from -55 to 125 °C, making it suitable for various applications requiring high-speed switching and low forward voltage drop.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.5 V

R-PDSO-F2

e3

1

50 A

1

1

2

125 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

20 V

400 uA

.01 us

20 V

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

NRVBSS29FA by Onsemi

NRVBSS29FA

Onsemi

NRVBSS29FA by Onsemi is a Schottky rectifier diode with 90V reverse test voltage, 0.007us reverse recovery time, and 100uA reverse current. It is a single-configured diode in a small outline package suitable for efficiency applications at temperatures ranging from -55 to 150 °C.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.85 V

R-PDSO-F2

e3

1

50 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

90 V

100 uA

.007 us

90 V

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

NRVBS210FA by Onsemi

NRVBS210FA

Onsemi

NRVBS210FA by Onsemi is a Schottky rectifier diode with a max reverse recovery time of 0.007 us and max output current of 2A. It is designed for efficiency applications, operating b/w -55 to 150 °C, with a peak reflow temperature of 260C.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.85 V

R-PDSO-F2

e3

1

50 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

100 V

100 uA

.007 us

100 V

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

NSR05201MX4T5G by Onsemi

NSR05201MX4T5G

Onsemi

NSR05201MX4T5G by Onsemi is a Schottky rectifier diode with 0.6V VF, 110uA reverse current, and 0.008us recovery time. Ideal for applications requiring fast switching and low power dissipation in electronics operating b/w -55 to 125 °C.

LOW LEAKAGE CURRENT

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

.6 V

R-PBCC-N2

1

1

2

125 Cel

-55 Cel

.5 A

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

.203 W

20 V

110 uA

.008 us

20 V

YES

SCHOTTKY

NO LEAD

BOTTOM

FFSH30120A-F155 by Onsemi

FFSH30120A-F155

Onsemi

FFSH30120A-F155 by Onsemi is a Schottky rectifier diode with 1200V reverse test voltage and 46A output current. It has a max power dissipation of 500W, making it suitable for high-efficiency applications. The diode's package style is flange mount with matte tin terminal finish, operating b/w -55°C to 175°C.

HIGH RELIABILITY, PD-CASE

EFFICIENCY

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.75 V

TO-247

R-PSFM-T2

e3

230 A

1

1

2

175 Cel

-55 Cel

46 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

500 W

1200 V

200 uA

1200 V

NO

SCHOTTKY

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NRVUA120VT3G-GA01 by Onsemi

NRVUA120VT3G-GA01

Onsemi

NRVUA120VT3G-GA01 by Onsemi is a single diode with a reverse test voltage of 200V and max reverse recovery time of 0.035us. It is designed for high voltage ultra fast recovery power applications, operating b/w -65 to 175 °C, with a max output current of 2A.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

200 V

SINGLE

SILICON

RECTIFIER DIODE

.875 V

R-PDSO-C2

40 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

200 V

2 uA

.035 us

200 V

YES

C BEND

DUAL

NRVUA160VT3G-GA01 by Onsemi

NRVUA160VT3G-GA01

Onsemi

NRVUA160VT3G-GA01 by Onsemi is a single diode with a reverse recovery time of 0.075 us and max reverse current of 5 uA. It is designed for high voltage ultra fast recovery power applications, with a max operating temperature of 175°C and min breakdown voltage of 600 V.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

600 V

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

R-PDSO-C2

30 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

600 V

5 uA

.075 us

600 V

YES

C BEND

DUAL

NRVTSA4100ET3G-GA01 by Onsemi

NRVTSA4100ET3G-GA01

Onsemi

NRVTSA4100ET3G-GA01 by Onsemi is a Schottky rectifier diode with a max reverse voltage of 100V and forward current of 4A. It operates b/w -55°C to 175°C, making it suitable for high-efficiency applications. This single-configured diode is surface-mountable and complies with AEC-Q101 standards.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

100 V

SINGLE

SILICON

RECTIFIER DIODE

.68 V

R-PDSO-C2

150 A

1

1

2

175 Cel

-55 Cel

4 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

100 V

29 uA

100 V

YES

SCHOTTKY

C BEND

DUAL

NRVUA110VT3G-GA01 by Onsemi

NRVUA110VT3G-GA01

Onsemi

NRVUA110VT3G-GA01 by Onsemi is a single diode with a reverse test voltage of 100V and max reverse recovery time of 0.03us. It is designed for high voltage ultra fast recovery power applications, operating b/w -65 to 175 °C, with a max output current of 2A.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

100 V

SINGLE

SILICON

RECTIFIER DIODE

.875 V

R-PDSO-C2

50 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

100 V

2 uA

.03 us

100 V

YES

C BEND

DUAL