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FFSH10120ADN-F155

Onsemi

FFSH10120ADN-F155 by Onsemi

FFSH10120ADN-F155 by Onsemi is a Schottky rectifier diode with 1200V reverse test voltage and 8.1A output current. It features common cathode configuration, suitable for efficiency applications with a max power dissipation of 83W. The diode operates b/w -55°C to 175°C temperature range, making it ideal for high-power rectification needs.

Median Price

$6.095

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 170 parts In-Stock

1+ parts

$1.640

100+ parts

$1.640

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$1.640

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170

$1.640

$1.640

$1.640

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Mouser Electronics

USA . 606 parts In-Stock

1+ parts

$5.330

100+ parts

$4.410

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606

$5.330

$4.410

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Farnell

UK . 395 parts In-Stock

1+ parts

$6.860

100+ parts

$3.140

1k+ parts

$3.080

10k+ parts

-

395

$6.860

$3.140

$3.080

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Element14

Singapore . 395 parts In-Stock

1+ parts

$6.870

100+ parts

$5.920

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395

$6.870

$5.920

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Chip1Stop

Japan . 724 parts In-Stock

1+ parts

$25.800

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$10.700

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$8.100

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724

$25.800

$10.700

$8.100

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Rochester

USA . 92,220 parts In-Stock

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-

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$4.130

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$3.700

10k+ parts

$3.480

92,220

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$4.130

$3.700

$3.480

Flip Electronics (Authorized)

USA . 135 parts In-Stock

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Verical

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Digiode

USA . 132 parts In-Stock

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$2.404

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132

$2.404

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Vyrian

USA . 5,068 parts In-Stock

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Flip Electronics

USA . 135 parts In-Stock

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$0.159

100+ parts

$0.145

1k+ parts

$0.130

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2,000

$0.159

$0.145

$0.130

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Corphita

USA . 1,534 parts In-Stock

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$2.277

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1,534

$2.277

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Corohmni

South Africa . 298 parts In-Stock

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$2.530

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298

$2.530

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Continental Prestige Electronics

USA . 449 parts In-Stock

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$6.410

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$4.810

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449

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$4.810

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Perfect Parts

USA . 164,677 parts In-Stock

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Kepictronics

USA . 22,000 parts In-Stock

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GreenTree Electronics

Israel . 21,033 parts In-Stock

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Authorized Procurement Solutions

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Lixinc

USA . 9,948 parts In-Stock

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Microchip USA

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TANS Electronics

Latvia . 2,792 parts In-Stock

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Kulean Microsystems

USA . 2,258 parts In-Stock

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Northwest PG Solutions

USA . 1,777 parts In-Stock

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SupplyDigital Components

Austria . 952 parts In-Stock

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Problanco Electronics

Mexico . 660 parts In-Stock

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Native Components

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Futuretech Components

Singapore . 359 parts In-Stock

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UHIMA Technologies

Türkiye . 113 parts In-Stock

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Overview

Discover the FFSH10120ADN-F155 by Onsemi, a high-quality diode and rectifier that offers unmatched efficiency for various applications. Manufactured by industry leader Onsemi, this product boasts cutting-edge technology and superior performance. With a maximum reverse voltage of 1200V and a maximum output current of 8.1A, this diode is designed for optimal power dissipation and reliability. Whether you're looking to enhance your electronics project or improve energy efficiency, the FFSH10120ADN-F155 is the perfect choice. Experience the value and benefits of this top-of-the-line diode today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diodes, making them suitable for various applications.

Maximum Reverse Current: 200 uA

Low reverse current ensures minimal power loss and efficient operation.

Maximum Reverse Test Voltage: 1200 V

High reverse test voltage allows for reliable performance in high voltage applications.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand harsh environmental conditions.

Technology: SCHOTTKY

Schottky diodes provide low forward voltage drop and fast switching, making them ideal for high efficiency applications.

Maximum Forward Voltage (VF): 1.75 V

Low forward voltage reduces power loss and improves efficiency in the circuit.

Maximum Output Current: 8.1 A

High output current capability allows this diode to handle large loads without overheating.

Diode Element Material: SILICON CARBIDE

Silicon carbide diodes offer high temperature resilience and low power losses, making them suitable for demanding applications.

Technical Specifications

Diodes & Rectifiers FFSH10120ADN-F155 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-247AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

42 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

8.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

83 W

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

1200 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Trade Compliance

FFSH10120ADN-F155 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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