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FFSH2065A

Onsemi

FFSH2065A by Onsemi

FFSH2065A by Onsemi is a single rectifier diode with 650V reverse test voltage and 25A output current. It operates b/w -55 to 175 °C, with a max power dissipation of 183W. Ideal for efficiency applications, it features silicon carbide diode element material and matte tin terminal finish.

Median Price

$6.175

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 147 parts In-Stock

1+ parts

$3.850

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-

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147

$3.850

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DigiKey

USA . 237 parts In-Stock

1+ parts

$8.500

100+ parts

$4.971

1k+ parts

$4.197

10k+ parts

-

237

$8.500

$4.971

$4.197

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RS (Exports)

UK . 59 parts In-Stock

1+ parts

$8.804

100+ parts

$6.261

1k+ parts

$5.540

10k+ parts

-

59

$8.804

$6.261

$5.540

-

Rochester

USA . 261,517 parts In-Stock

1+ parts

-

100+ parts

$3.840

1k+ parts

$3.430

10k+ parts

$3.230

261,517

-

$3.840

$3.430

$3.230

Chip1Stop

Japan . 337 parts In-Stock

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337

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Master Electronics

USA . 313 parts In-Stock

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313

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Verical

USA . 147 parts In-Stock

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147

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Distributors (In-Stock)

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Digiode

USA . 2,442 parts In-Stock

1+ parts

$3.619

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-

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2,442

$3.619

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Vyrian

USA . 8,847 parts In-Stock

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Rapid Electronics

USA . 337 parts In-Stock

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337

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Distributors (Availability)

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Corphita

USA . 211 parts In-Stock

1+ parts

$3.428

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211

$3.428

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Corohmni

South Africa . 109 parts In-Stock

1+ parts

$3.809

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109

$3.809

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Continental Prestige Electronics

USA . 387 parts In-Stock

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$4.830

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387

$4.830

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Microchip USA

USA . 318 parts In-Stock

1+ parts

$22.990

100+ parts

$22.660

1k+ parts

$22.500

10k+ parts

$22.330

318

$22.990

$22.660

$22.500

$22.330

Kulean Microsystems

USA . 7,616 parts In-Stock

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7,616

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SupplyDigital Components

Austria . 4,890 parts In-Stock

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4,890

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Lixinc

USA . 4,682 parts In-Stock

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4,682

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Problanco Electronics

Mexico . 3,444 parts In-Stock

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TANS Electronics

Latvia . 2,817 parts In-Stock

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Perfect Parts

USA . 2,070 parts In-Stock

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2,070

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Northwest PG Solutions

USA . 1,594 parts In-Stock

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UHIMA Technologies

Türkiye . 631 parts In-Stock

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Native Components

USA . 357 parts In-Stock

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GreenTree Electronics

Israel . 88 parts In-Stock

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Authorized Procurement Solutions

USA . 58 parts In-Stock

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Overview

Unleash the power of efficiency with the FFSH2065A by Onsemi. Designed to deliver top-notch performance and reliability, this rectifier diode is a game-changer in the world of electronics. With a maximum reverse test voltage of 650V and a maximum output current of 25A, this product ensures seamless operation even in the most demanding applications. Whether you're looking to enhance power efficiency or boost overall productivity, the FFSH2065A has got you covered. Trust in Onsemi's expertise in diodes & rectifiers to take your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the internal components of the diode, prolonging its lifespan.

Maximum Reverse Current: 200 uA

Low reverse current ensures efficient operation and minimal power loss in the circuit.

Reverse Test Voltage: 650 V

High reverse test voltage allows the diode to handle high voltage levels without breakdown, making it suitable for a wide range of applications.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliable performance even in demanding environments.

Diode Type: RECTIFIER DIODE

Rectifier diodes are ideal for converting AC to DC, making this diode suitable for power supply applications.

Technical Specifications

Diodes & Rectifiers FFSH2065A attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-247AB

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

1000 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

25 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

183 W

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

650 V

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

FFSH2065A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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