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FFSH10120A-F155

Onsemi

FFSH10120A-F155 by Onsemi

FFSH10120A-F155 by Onsemi is a single Schottky rectifier diode with a max reverse voltage of 1200V and forward current of 17A. It operates b/w -55 to 175°C, making it suitable for high-efficiency applications. The package style is flange mount with matte tin terminals, offering a max power dissipation of 193W.

Median Price

$5.900

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 150 parts In-Stock

1+ parts

$1.620

100+ parts

$1.620

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$1.620

10k+ parts

-

150

$1.620

$1.620

$1.620

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Verical

USA . 25 parts In-Stock

1+ parts

$5.389

100+ parts

$4.547

1k+ parts

-

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25

$5.389

$4.547

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Farnell

UK . 465 parts In-Stock

1+ parts

$5.900

100+ parts

$2.950

1k+ parts

$2.890

10k+ parts

-

465

$5.900

$2.950

$2.890

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Mouser Electronics

USA . 178 parts In-Stock

1+ parts

$7.950

100+ parts

$5.670

1k+ parts

$4.850

10k+ parts

$4.790

178

$7.950

$5.670

$4.850

$4.790

DigiKey

USA . 180 parts In-Stock

1+ parts

$9.220

100+ parts

$5.415

1k+ parts

$4.580

10k+ parts

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180

$9.220

$5.415

$4.580

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Element14

Singapore . 465 parts In-Stock

1+ parts

$12.640

100+ parts

$6.320

1k+ parts

$6.300

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465

$12.640

$6.320

$6.300

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Rochester

USA . 3,463 parts In-Stock

1+ parts

-

100+ parts

$4.130

1k+ parts

$3.700

10k+ parts

$3.480

3,463

-

$4.130

$3.700

$3.480

Flip Electronics (Authorized)

USA . 135 parts In-Stock

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Digiode

USA . 1,917 parts In-Stock

1+ parts

$4.360

100+ parts

-

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1,917

$4.360

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Vyrian

USA . 5,483 parts In-Stock

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5,483

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Flip Electronics

USA . 135 parts In-Stock

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135

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Corphita

USA . 971 parts In-Stock

1+ parts

$4.131

100+ parts

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971

$4.131

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Corohmni

South Africa . 358 parts In-Stock

1+ parts

$4.590

100+ parts

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358

$4.590

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Continental Prestige Electronics

USA . 465 parts In-Stock

1+ parts

$7.450

100+ parts

$5.160

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-

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465

$7.450

$5.160

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Microchip USA

USA . 6,210 parts In-Stock

1+ parts

$23.350

100+ parts

$23.020

1k+ parts

$22.850

10k+ parts

$22.680

6,210

$23.350

$23.020

$22.850

$22.680

QUARKTWIN TECHNOLOGY LTD

USA . 11,499 parts In-Stock

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TANS Electronics

Latvia . 7,943 parts In-Stock

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7,943

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SupplyDigital Components

Austria . 5,519 parts In-Stock

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5,519

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Kulean Microsystems

USA . 3,823 parts In-Stock

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3,823

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Problanco Electronics

Mexico . 3,542 parts In-Stock

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Northwest PG Solutions

USA . 1,317 parts In-Stock

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Native Components

USA . 779 parts In-Stock

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UHIMA Technologies

Türkiye . 211 parts In-Stock

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Authorized Procurement Solutions

USA . 108 parts In-Stock

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108

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Overview

Discover the cutting-edge FFSH10120A-F155 by Onsemi, a top-quality rectifier diode that promises superior performance and reliability. Manufactured by industry leader Onsemi, this diode is designed for efficiency applications with a maximum reverse voltage of 1200V and a maximum output current of 17A. With a Schottky technology and matte tin terminal finish, this product offers unbeatable value and benefits to customers, ensuring optimal functionality even in extreme temperatures. Upgrade your projects with the FFSH10120A-F155 and experience the unparalleled advantages it brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection and durability for the diode, making it suitable for various applications.

Maximum Reverse Current: 200 uA

Low reverse current helps in minimizing power loss and improving efficiency of the overall circuit.

Maximum Reverse Test Voltage: 1200 V

High reverse test voltage ensures the diode can handle a wide range of voltages, making it versatile and reliable.

Maximum Power Dissipation: 193 W

High power dissipation capability allows the diode to handle high power applications without overheating.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting AC to DC, making this diode suitable for power supply applications.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speed compared to standard diodes, improving efficiency and performance.

Maximum Non Repetitive Peak Forward Current: 90 A

High peak forward current rating allows the diode to handle short duration high currents without damage, ensuring reliability.

Diode Element Material: SILICON CARBIDE

Silicon carbide has higher thermal conductivity and can operate at higher temperatures, making the diode suitable for high power and high temperature environments.

Technical Specifications

Diodes & Rectifiers FFSH10120A-F155 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

90 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

17 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

193 W

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

1200 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Trade Compliance

FFSH10120A-F155 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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