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FFSH1665A

Onsemi

FFSH1665A by Onsemi

FFSH1665A by Onsemi is a single rectifier diode with 650V reverse test voltage and 23A output current. It features a max power dissipation of 161W, suitable for efficiency applications. With silicon carbide diode element material, it operates b/w -55 to 150 °C temperature range.

Median Price

$4.162

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 335 parts In-Stock

1+ parts

$3.156

100+ parts

-

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335

$3.156

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Chip1Stop

Japan . 335 parts In-Stock

1+ parts

$4.390

100+ parts

$3.816

1k+ parts

$3.550

10k+ parts

-

335

$4.390

$3.816

$3.550

-

DigiKey

USA . 129 parts In-Stock

1+ parts

$6.410

100+ parts

$5.120

1k+ parts

$4.581

10k+ parts

-

129

$6.410

$5.120

$4.581

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Rochester

USA . 8,925 parts In-Stock

1+ parts

-

100+ parts

$3.330

1k+ parts

$2.980

10k+ parts

$2.800

8,925

-

$3.330

$2.980

$2.800

Verical

USA . 7,965 parts In-Stock

1+ parts

-

100+ parts

$4.162

1k+ parts

$3.725

10k+ parts

$3.500

7,965

-

$4.162

$3.725

$3.500

EBV Elektronik

Germany . 450 parts In-Stock

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450

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Digiode

USA . 136 parts In-Stock

1+ parts

$3.696

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136

$3.696

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Vyrian

USA . 4,070 parts In-Stock

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4,070

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Flip Electronics

USA . 420 parts In-Stock

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420

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Distributors (Availability)

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Corphita

USA . 800 parts In-Stock

1+ parts

$3.501

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-

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800

$3.501

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Corohmni

South Africa . 64 parts In-Stock

1+ parts

$3.693

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64

$3.693

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Microchip USA

USA . 7,960 parts In-Stock

1+ parts

$23.140

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7,960

$23.140

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Kulean Microsystems

USA . 5,544 parts In-Stock

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5,544

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SupplyDigital Components

Austria . 4,343 parts In-Stock

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4,343

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TANS Electronics

Latvia . 3,255 parts In-Stock

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Problanco Electronics

Mexico . 2,513 parts In-Stock

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2,513

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Perfect Parts

USA . 2,471 parts In-Stock

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Northwest PG Solutions

USA . 1,518 parts In-Stock

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1,518

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Eastek

USA . 450 parts In-Stock

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450

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Native Components

USA . 425 parts In-Stock

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425

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GreenTree Electronics

Israel . 126 parts In-Stock

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126

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UHIMA Technologies

Türkiye . 75 parts In-Stock

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75

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Overview

Discover the power of efficiency with the FFSH1665A by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality diodes and rectifiers that are designed to exceed expectations. With a maximum output current of 23A and a maximum reverse voltage of 650V, this product is perfect for applications requiring high performance and reliability. Whether you're looking to optimize your power supply or enhance your electronic systems, the FFSH1665A offers unmatched value, benefits, and advantages that will take your projects to the next level. Trust in Onsemi for all your efficiency needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diode, ensuring reliable performance and durability.

Maximum Reverse Current: 200 uA

Low reverse current ensures minimal power loss and high efficiency in the application.

Reverse Test Voltage: 650 V

High reverse test voltage allows the diode to withstand high voltage conditions without breakdown.

Maximum Operating Temperature: 150 °C

Wide operating temperature range makes this diode suitable for various environmental conditions.

Maximum Power Dissipation: 161 W

High power dissipation capability allows the diode to handle large amounts of power without overheating.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting AC to DC, making this diode ideal for efficient power conversion.

Maximum Forward Voltage (VF): 1.75 V

Low forward voltage drop minimizes energy loss and improves overall efficiency of the diode.

Maximum Output Current: 23 A

High output current rating enables this diode to handle large electrical loads with ease.

Technology: AVALANCHE

Avalanche diodes have the ability to withstand high voltage transients, making this diode suitable for surge protection applications.

Diode Element Material: SILICON CARBIDE

Silicon carbide offers high temperature resistance and fast switching speeds, making this diode a reliable choice for high-power applications.

Technical Specifications

Diodes & Rectifiers FFSH1665A attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-247AB

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

900 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

23 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

161 W

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

650 V

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

FFSH1665A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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