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FFSH2065ADN-F085

Onsemi

FFSH2065ADN-F085 by Onsemi

FFSH2065ADN-F085 by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max reverse voltage of 650V. It has a max output current of 10A and power dissipation of 93W. Ideal for efficiency applications, operating temperature ranges from -55 to 175 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 867 parts In-Stock

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SupplyDigital Components

Austria . 8,391 parts In-Stock

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Problanco Electronics

Mexico . 1,750 parts In-Stock

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Kulean Microsystems

USA . 1,016 parts In-Stock

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UHIMA Technologies

Türkiye . 899 parts In-Stock

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Corphita

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Native Components

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Northwest PG Solutions

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Corohmni

South Africa . 215 parts In-Stock

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TANS Electronics

Latvia . 154 parts In-Stock

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Overview

Elevate your efficiency with the FFSH2065ADN-F085 by Onsemi. This diode rectifier boasts high-quality construction and cutting-edge technology, making it a top choice for a wide range of applications. From power supplies to motor drives, this product offers unmatched performance and reliability. With a maximum reverse voltage of 650V and a maximum output current of 10A, the FFSH2065ADN-F085 delivers exceptional value to customers seeking superior functionality and durability. Trust in Onsemi's expertise and elevate your projects to new heights with this powerhouse diode rectifier.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, making them suitable for various applications.

Maximum Reverse Current: 200 uA

Low reverse current ensures efficient operation and minimal power loss.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it suitable for use in demanding environments.

Technology: SCHOTTKY

Schottky diodes have low forward voltage drop and fast switching speeds, making them ideal for high-frequency applications.

Maximum Output Current: 10 A

High output current capability allows for reliable performance in power supply applications.

Technical Specifications

Diodes & Rectifiers FFSH2065ADN-F085 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-247AB

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

56 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

93 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

650 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

FFSH2065ADN-F085 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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