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FFSH30120A-F155

Onsemi

FFSH30120A-F155 by Onsemi

FFSH30120A-F155 by Onsemi is a Schottky rectifier diode with 1200V reverse test voltage and 46A output current. It has a max power dissipation of 500W, making it suitable for high-efficiency applications. The diode's package style is flange mount with matte tin terminal finish, operating b/w -55°C to 175°C.

Median Price

$8.640

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 130 parts In-Stock

1+ parts

$8.640

100+ parts

-

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-

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130

$8.640

-

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Farnell

UK . 450 parts In-Stock

1+ parts

$13.120

100+ parts

$9.850

1k+ parts

$9.600

10k+ parts

-

450

$13.120

$9.850

$9.600

-

DigiKey

USA . 410 parts In-Stock

1+ parts

$16.090

100+ parts

$9.917

1k+ parts

$8.543

10k+ parts

-

410

$16.090

$9.917

$8.543

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Element14

Singapore . 450 parts In-Stock

1+ parts

$22.890

100+ parts

$17.610

1k+ parts

$17.160

10k+ parts

-

450

$22.890

$17.610

$17.160

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Verical

USA . 3,150 parts In-Stock

1+ parts

-

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$8.597

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3,150

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$8.597

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Arrow

USA . 1,800 parts In-Stock

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1,800

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Avnet

USA . 50 parts In-Stock

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$2.429

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50

-

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$2.429

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Rochester

USA . 7 parts In-Stock

1+ parts

-

100+ parts

$8.540

1k+ parts

$7.640

10k+ parts

$7.190

7

-

$8.540

$7.640

$7.190

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 833 parts In-Stock

1+ parts

$8.208

100+ parts

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833

$8.208

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-

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Nova Conductors

Japan . 98 parts In-Stock

1+ parts

$11.598

100+ parts

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98

$11.598

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Vyrian

USA . 7,440 parts In-Stock

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7,440

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Flip Electronics

USA . 3,150 parts In-Stock

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3,150

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IBS Electronics

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$11.809

1k+ parts

$16.564

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100

-

$11.809

$16.564

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NAC Semi

USA . 52 parts In-Stock

1+ parts

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100+ parts

$15.600

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52

-

$15.600

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 2,533 parts In-Stock

1+ parts

$0.160

100+ parts

-

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2,533

$0.160

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Ampacity Inc.

Singapore . 420 parts In-Stock

1+ parts

$2.060

100+ parts

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420

$2.060

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-

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Semicontronic

India . 267 parts In-Stock

1+ parts

$2.060

100+ parts

$2.008

1k+ parts

$1.998

10k+ parts

-

267

$2.060

$2.008

$1.998

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Corphita

USA . 385 parts In-Stock

1+ parts

$7.776

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385

$7.776

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Corohmni

South Africa . 423 parts In-Stock

1+ parts

$8.040

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423

$8.040

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Continental Prestige Electronics

USA . 445 parts In-Stock

1+ parts

$14.160

100+ parts

$10.800

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445

$14.160

$10.800

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Microchip USA

USA . 5,754 parts In-Stock

1+ parts

$48.104

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5,754

$48.104

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Kulean Microsystems

USA . 6,232 parts In-Stock

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6,232

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Perfect Parts

USA . 5,779 parts In-Stock

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5,779

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Argo Parts USA

USA . 4,349 parts In-Stock

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4,349

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Problanco Electronics

Mexico . 3,472 parts In-Stock

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SupplyDigital Components

Austria . 1,793 parts In-Stock

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1,793

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TANS Electronics

Latvia . 1,485 parts In-Stock

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1,485

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Authorized Procurement Solutions

USA . 1,220 parts In-Stock

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GreenTree Electronics

Israel . 735 parts In-Stock

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735

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UHIMA Technologies

Türkiye . 148 parts In-Stock

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148

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Lixinc

USA . 79 parts In-Stock

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79

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Bastille Electronics

Australia . 10 parts In-Stock

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10

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Overview

Discover the unparalleled quality of the FFSH30120A-F155 by Onsemi, a cutting-edge rectifier diode that surpasses industry standards. With a maximum reverse test voltage of 1200V and a maximum output current of 46A, this Schottky diode offers unmatched efficiency and reliability in various applications. Manufactured by Onsemi, a trusted leader in semiconductor technology, this product ensures superior performance and durability. Don't settle for anything less than the best - choose the FFSH30120A-F155 for your next project and experience the difference in quality and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides physical protection for the diode and ensures durability.

Maximum Reverse Current: 200 uA

Efficient in preventing reverse current flow, enhancing overall performance.

Reverse Test Voltage: 1200 V

High reverse test voltage ensures reliable operation in various conditions.

Maximum Power Dissipation: 500 W

High power dissipation capability allows for handling of high power levels effectively.

Diode Type: RECTIFIER DIODE

Rectifier diode type ensures efficient conversion of AC to DC current.

Technology: SCHOTTKY

Schottky technology enables fast switching speeds and low forward voltage drop.

Maximum Repetitive Peak Reverse Voltage: 1200 V

High reverse voltage rating offers robust protection against reverse voltage spikes.

Diode Element Material: SILICON CARBIDE

Silicon carbide material provides high endurance, efficiency, and temperature tolerance.

Technical Specifications

Diodes & Rectifiers FFSH30120A-F155 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

230 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

46 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

500 W

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

1200 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Trade Compliance

FFSH30120A-F155 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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