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FFSH2065ADN-F155

Onsemi

FFSH2065ADN-F155 by Onsemi

FFSH2065ADN-F155 by Onsemi is a common cathode diode with 2 elements, featuring a max reverse current of 200uA and a reverse test voltage of 650V. It is designed for efficiency applications, with a max output current of 13A and max power dissipation of 93W.

Median Price

$6.416

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Future Electronics

Canada . 4 parts In-Stock

1+ parts

$3.260

100+ parts

$3.140

1k+ parts

$3.000

10k+ parts

-

4

$3.260

$3.140

$3.000

-

Farnell

UK . 149 parts In-Stock

1+ parts

$4.430

100+ parts

$4.390

1k+ parts

$4.370

10k+ parts

-

149

$4.430

$4.390

$4.370

-

Mouser Electronics

USA . 401 parts In-Stock

1+ parts

$7.320

100+ parts

$5.710

1k+ parts

$4.500

10k+ parts

$4.400

401

$7.320

$5.710

$4.500

$4.400

DigiKey

USA . 632 parts In-Stock

1+ parts

$9.380

100+ parts

-

1k+ parts

$4.404

10k+ parts

-

632

$9.380

-

$4.404

-

Newark

USA . 49 parts In-Stock

1+ parts

$11.100

100+ parts

$8.450

1k+ parts

$6.620

10k+ parts

-

49

$11.100

$8.450

$6.620

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Element14

Singapore . 49 parts In-Stock

1+ parts

$13.600

100+ parts

$8.170

1k+ parts

$7.580

10k+ parts

-

49

$13.600

$8.170

$7.580

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Flip Electronics (Authorized)

USA . 178,623 parts In-Stock

1+ parts

-

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178,623

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Rochester

USA . 11,259 parts In-Stock

1+ parts

-

100+ parts

$4.410

1k+ parts

$3.940

10k+ parts

$3.710

11,259

-

$4.410

$3.940

$3.710

Verical

USA . 8,770 parts In-Stock

1+ parts

-

100+ parts

$5.513

1k+ parts

$4.925

10k+ parts

-

8,770

-

$5.513

$4.925

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EBV Elektronik

Germany . 510 parts In-Stock

1+ parts

-

100+ parts

-

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510

-

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Distributors (In-Stock)

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Digiode

USA . 674 parts In-Stock

1+ parts

$3.097

100+ parts

-

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-

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674

$3.097

-

-

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Vyrian

USA . 2,407 parts In-Stock

1+ parts

$3.260

100+ parts

-

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2,407

$3.260

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Flip Electronics

USA . 178,713 parts In-Stock

1+ parts

-

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178,713

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-

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IBS Electronics

USA . 4 parts In-Stock

1+ parts

-

100+ parts

$4.362

1k+ parts

$4.207

10k+ parts

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4

-

$4.362

$4.207

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,262 parts In-Stock

1+ parts

$2.934

100+ parts

-

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2,262

$2.934

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Corohmni

South Africa . 365 parts In-Stock

1+ parts

$3.260

100+ parts

-

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365

$3.260

-

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Continental Prestige Electronics

USA . 150 parts In-Stock

1+ parts

$9.560

100+ parts

$7.850

1k+ parts

-

10k+ parts

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150

$9.560

$7.850

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-

Microchip USA

USA . 6,592 parts In-Stock

1+ parts

$24.890

100+ parts

$24.540

1k+ parts

$24.360

10k+ parts

$24.180

6,592

$24.890

$24.540

$24.360

$24.180

Lixinc

USA . 11,037 parts In-Stock

1+ parts

-

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11,037

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TANS Electronics

Latvia . 5,826 parts In-Stock

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5,826

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Perfect Parts

USA . 2,395 parts In-Stock

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2,395

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Problanco Electronics

Mexico . 1,662 parts In-Stock

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1,662

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Kulean Microsystems

USA . 1,027 parts In-Stock

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SupplyDigital Components

Austria . 935 parts In-Stock

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935

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UHIMA Technologies

Türkiye . 649 parts In-Stock

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649

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Native Components

USA . 538 parts In-Stock

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538

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Eastek

USA . 510 parts In-Stock

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510

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GreenTree Electronics

Israel . 108 parts In-Stock

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Authorized Procurement Solutions

USA . 108 parts In-Stock

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108

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Northwest PG Solutions

USA . 93 parts In-Stock

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93

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Overview

Enhance the efficiency and performance of your electronic devices with the FFSH2065ADN-F155 by Onsemi. Crafted with precision and quality, this diode rectifier offers a common cathode configuration with two elements, providing a maximum reverse test voltage of 650V. Perfect for applications that require high power dissipation and temperature resistance, this product ensures reliable operation even in extreme conditions. Trust in Onsemi's reputation for excellence and elevate your projects with the cutting-edge technology of the FFSH2065ADN-F155.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring longevity and reliability.

Maximum Reverse Current: 200 uA

Low reverse current ensures efficient performance and minimal power loss.

Reverse Test Voltage: 650 V

High reverse test voltage allows for safe operation in high voltage applications.

Maximum Operating Temperature: 175 °C

Wide operating temperature range ensures stable performance in various conditions.

Maximum Power Dissipation: 93 W

High power dissipation capability enables handling of heavy loads without overheating.

Diode Type: RECTIFIER DIODE

Rectifier diodes are well-suited for converting AC to DC, making this product ideal for power supply applications.

Technology: AVALANCHE

Avalanche technology allows for reliable operation under high voltage conditions, making this product suitable for demanding environments.

Diode Element Material: SILICON CARBIDE

Silicon carbide material provides high efficiency and durability, making this product a cost-effective and reliable choice.

Technical Specifications

Diodes & Rectifiers FFSH2065ADN-F155 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-247AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

580 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

13 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

93 W

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

650 V

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

FFSH2065ADN-F155 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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