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FFSH20120A

Onsemi

FFSH20120A by Onsemi

FFSH20120A by Onsemi is a single rectifier diode with a max reverse voltage of 1200V and forward current of 30A. It operates b/w -55 to 175°C, making it suitable for high-efficiency applications. With a power dissipation of 273W, this silicon carbide diode is ideal for avalanche technology in various electronic systems.

Median Price

$9.050

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 761 parts In-Stock

1+ parts

$11.680

100+ parts

$8.890

1k+ parts

$8.320

10k+ parts

-

761

$11.680

$8.890

$8.320

-

Chip1Stop

Japan . 311 parts In-Stock

1+ parts

$42.200

100+ parts

$17.600

1k+ parts

-

10k+ parts

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311

$42.200

$17.600

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Flip Electronics (Authorized)

USA . 2,496 parts In-Stock

1+ parts

-

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2,496

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Rochester

USA . 1,290 parts In-Stock

1+ parts

-

100+ parts

$6.890

1k+ parts

$6.160

10k+ parts

$5.800

1,290

-

$6.890

$6.160

$5.800

DigiKey

USA . 1,290 parts In-Stock

1+ parts

-

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$9.050

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-

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1,290

-

$9.050

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Verical

USA . 450 parts In-Stock

1+ parts

-

100+ parts

$8.600

1k+ parts

$7.688

10k+ parts

$7.237

450

-

$8.600

$7.688

$7.237

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,083 parts In-Stock

1+ parts

$7.268

100+ parts

-

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1,083

$7.268

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-

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Nova Conductors

Japan . 200 parts In-Stock

1+ parts

$10.280

100+ parts

-

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200

$10.280

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Flip Electronics

USA . 2,496 parts In-Stock

1+ parts

-

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2,496

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Vyrian

USA . 1,044 parts In-Stock

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1,044

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,148 parts In-Stock

1+ parts

$6.500

100+ parts

-

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1,148

$6.500

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Corphita

USA . 1,683 parts In-Stock

1+ parts

$6.885

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1,683

$6.885

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Corohmni

South Africa . 107 parts In-Stock

1+ parts

$7.650

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107

$7.650

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Continental Prestige Electronics

USA . 6,825 parts In-Stock

1+ parts

$10.280

100+ parts

-

1k+ parts

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10k+ parts

$10.074

6,825

$10.280

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-

$10.074

Microchip USA

USA . 6,985 parts In-Stock

1+ parts

$34.330

100+ parts

$33.840

1k+ parts

$33.590

10k+ parts

$33.350

6,985

$34.330

$33.840

$33.590

$33.350

SupplyDigital Components

Austria . 7,615 parts In-Stock

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Kepictronics

USA . 5,400 parts In-Stock

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5,400

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TANS Electronics

Latvia . 4,880 parts In-Stock

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Kulean Microsystems

USA . 4,191 parts In-Stock

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Argo Parts USA

USA . 4,188 parts In-Stock

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Problanco Electronics

Mexico . 3,471 parts In-Stock

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Perfect Parts

USA . 2,202 parts In-Stock

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2,202

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UHIMA Technologies

Türkiye . 444 parts In-Stock

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444

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GreenTree Electronics

Israel . 411 parts In-Stock

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411

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Authorized Procurement Solutions

USA . 335 parts In-Stock

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335

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Overview

Enhance the efficiency of your electronic devices with the FFSH20120A by Onsemi. As a leading manufacturer in the industry, Onsemi offers top-quality diodes and rectifiers that are designed for optimal performance. With a maximum reverse voltage of 1200V and a maximum output current of 30A, this product is perfect for applications requiring high power dissipation. Whether you're working on power supplies, inverters, or motor drives, the FFSH20120A provides reliable and consistent results. Upgrade your projects with this cutting-edge technology and experience the benefits of increased power efficiency and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the diode, making it suitable for various applications.

Maximum Reverse Current: 200 uA

Low reverse current ensures efficient operation and minimum power loss.

Reverse Test Voltage: 1200 V

High reverse test voltage capability ensures reliable performance in demanding conditions.

Maximum Operating Temperature: 175 °C

Wide temperature range allows the diode to operate in harsh environments without performance degradation.

Maximum Power Dissipation: 273 W

High power dissipation capability ensures the diode can handle high power applications effectively.

Diode Type: RECTIFIER DIODE

Rectifier diode design allows for efficient conversion of alternating current to direct current, suitable for numerous electrical applications.

Technical Specifications

Diodes & Rectifiers FFSH20120A attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-247AB

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

135 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

273 W

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

1200 V

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

FFSH20120A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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