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FFSH40120ADN-F155

Onsemi

FFSH40120ADN-F155 by Onsemi

FFSH40120ADN-F155 by Onsemi is a common cathode rectifier diode with 2 elements, capable of handling up to 1200V reverse test voltage and 20A output current. It features a max power dissipation of 220W and operates b/w -55°C to 175°C, making it suitable for high-efficiency applications requiring robust diode technology.

Median Price

$11.978

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 450 parts In-Stock

1+ parts

$9.950

100+ parts

$9.950

1k+ parts

$9.950

10k+ parts

-

450

$9.950

$9.950

$9.950

-

Chip1Stop

Japan . 30 parts In-Stock

1+ parts

$12.700

100+ parts

-

1k+ parts

-

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30

$12.700

-

-

-

Farnell

UK . 450 parts In-Stock

1+ parts

$13.420

100+ parts

$9.700

1k+ parts

$9.140

10k+ parts

-

450

$13.420

$9.700

$9.140

-

DigiKey

USA . 450 parts In-Stock

1+ parts

$19.840

100+ parts

$12.459

1k+ parts

$11.185

10k+ parts

-

450

$19.840

$12.459

$11.185

-

Element14

Singapore . 450 parts In-Stock

1+ parts

$23.560

100+ parts

$16.040

1k+ parts

$15.720

10k+ parts

-

450

$23.560

$16.040

$15.720

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Verical

USA . 35,550 parts In-Stock

1+ parts

-

100+ parts

-

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$11.255

10k+ parts

-

35,550

-

-

$11.255

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Rochester

USA . 3,835 parts In-Stock

1+ parts

-

100+ parts

$11.190

1k+ parts

$10.010

10k+ parts

$9.420

3,835

-

$11.190

$10.010

$9.420

Arrow

USA . 450 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$11.243

10k+ parts

-

450

-

-

$11.243

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,045 parts In-Stock

1+ parts

$10.004

100+ parts

-

1k+ parts

-

10k+ parts

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1,045

$10.004

-

-

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Nova Conductors

Japan . 1,170 parts In-Stock

1+ parts

$19.670

100+ parts

-

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-

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1,170

$19.670

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Flip Electronics

USA . 35,550 parts In-Stock

1+ parts

-

100+ parts

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35,550

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Vyrian

USA . 4,402 parts In-Stock

1+ parts

-

100+ parts

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4,402

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IBS Electronics

USA . 130 parts In-Stock

1+ parts

-

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$21.683

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130

-

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$21.683

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NAC Semi

USA . 52 parts In-Stock

1+ parts

-

100+ parts

$20.470

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52

-

$20.470

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 3,538 parts In-Stock

1+ parts

$0.060

100+ parts

-

1k+ parts

-

10k+ parts

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3,538

$0.060

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-

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Component Stockers USA

USA . 21 parts In-Stock

1+ parts

$7.170

100+ parts

-

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-

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21

$7.170

-

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Semicontronic

India . 4,192 parts In-Stock

1+ parts

$8.460

100+ parts

$8.248

1k+ parts

$8.206

10k+ parts

-

4,192

$8.460

$8.248

$8.206

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Ampacity Inc.

Singapore . 3,559 parts In-Stock

1+ parts

$8.460

100+ parts

-

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3,559

$8.460

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Corphita

USA . 419 parts In-Stock

1+ parts

$9.477

100+ parts

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419

$9.477

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Corohmni

South Africa . 220 parts In-Stock

1+ parts

$10.962

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220

$10.962

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$19.277

100+ parts

-

1k+ parts

$18.506

10k+ parts

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2,000

$19.277

-

$18.506

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Continental Prestige Electronics

USA . 6,679 parts In-Stock

1+ parts

$19.670

100+ parts

-

1k+ parts

-

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$19.277

6,679

$19.670

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-

$19.277

Microchip USA

USA . 2,341 parts In-Stock

1+ parts

$47.564

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2,341

$47.564

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Perfect Parts

USA . 26,316 parts In-Stock

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26,316

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Argo Parts USA

USA . 3,973 parts In-Stock

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SupplyDigital Components

Austria . 3,250 parts In-Stock

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3,250

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Lucentia Tech

USA . 3,000 parts In-Stock

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$0.033

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$0.033

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$0.033

3,000

-

$0.033

$0.033

$0.033

TANS Electronics

Latvia . 2,884 parts In-Stock

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2,884

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Problanco Electronics

Mexico . 2,670 parts In-Stock

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2,670

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Supply Digital

USA . 1,674 parts In-Stock

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1,674

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Kulean Microsystems

USA . 1,495 parts In-Stock

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1,495

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UHIMA Technologies

Türkiye . 238 parts In-Stock

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238

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Robosynatics

Brazil . 200 parts In-Stock

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200

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GreenTree Electronics

Israel . 99 parts In-Stock

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99

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Overview

Discover the FFSH40120ADN-F155 by Onsemi, a high-quality diode & rectifier that offers unmatched efficiency and reliability. Manufactured by industry leader Onsemi, this product is designed with cutting-edge technology to meet the demands of various applications. With a maximum reverse voltage of 1200V and a maximum forward current of 20A, this diode is perfect for high-power systems where performance is key. Experience the value and benefits of this top-of-the-line diode, and take your projects to the next level with the FFSH40120ADN-F155.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this diode durable and resistant to environmental factors.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for easy circuit integration and efficient operation.

Maximum Reverse Current: 200 uA

With a low reverse current, this diode minimizes power loss and improves overall efficiency.

Package Shape: RECTANGULAR

Rectangular package shape provides easy installation and space-saving design.

Reverse Test Voltage: 1200 V

High reverse test voltage ensures reliable performance and protection against reverse polarity.

No. of Terminals: 3

Three terminals offer flexibility in circuit connections and enable precise control over the diode's operation.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for secure mounting and enhanced heat dissipation in high-power applications.

Application: EFFICIENCY

Designed for efficiency, this diode is suitable for applications where power conversion and energy savings are crucial.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising performance.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature range ensures reliable operation even in extreme cold environments.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good electrical conductivity and solderability, making installation hassle-free.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and allows for easy connection to other components.

Case Connection: CATHODE

Case connection at the cathode ensures proper grounding and helps in effective heat dissipation.

Maximum Power Dissipation: 220 W

High power dissipation capability allows this diode to handle large loads and prevent overheating.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, this product is ideal for converting AC to DC with low voltage drop and high efficiency.

Maximum Forward Voltage (VF): 1.75 V

Low forward voltage drop ensures energy efficiency and minimal power loss during forward conduction.

Maximum Output Current: 20 A

With a high maximum output current, this diode can handle heavy loads and provide reliable performance in high-power circuits.

Technology: AVALANCHE

Avalanche technology ensures stable and reliable operation, even under high voltage and current conditions.

Terminal Form: THROUGH-HOLE

Through-hole terminal form allows for easy manual soldering and robust mechanical connection to the circuit board.

No. of Elements: 2

With 2 diode elements, this product offers redundancy and reliability in case one element fails.

Maximum Repetitive Peak Reverse Voltage: 1200 V

High repetitive peak reverse voltage rating makes this diode suitable for high-voltage applications with protection against reverse voltage spikes.

Maximum Non-Repetitive Peak Forward Current: 135 A

The ability to handle high non-repetitive peak forward current makes this diode suitable for surge protection and high-power applications.

Diode Element Material: SILICON CARBIDE

Silicon carbide diode elements offer high-temperature tolerance, low reverse recovery time, and improved efficiency compared to traditional diode materials.

Technical Specifications

Diodes & Rectifiers FFSH40120ADN-F155 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

135 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

220 W

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

1200 V

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

FFSH40120ADN-F155 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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