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FFSH1065B-F085

Onsemi

FFSH1065B-F085 by Onsemi

FFSH1065B-F085 by Onsemi is a single Schottky rectifier diode with 650V reverse test voltage and 11.5A output current. It has a max power dissipation of 83W, making it suitable for high-efficiency applications in automotive electronics. Operating temperature ranges from -55 to 175°C, meeting AEC-Q101 standards.

Median Price

$7.024

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,001 parts In-Stock

1+ parts

$8.710

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2,001

$8.710

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DigiKey

USA . 1,565 parts In-Stock

1+ parts

$10.250

100+ parts

$6.076

1k+ parts

$5.513

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1,565

$10.250

$6.076

$5.513

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Verical

USA . 4,950 parts In-Stock

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$4.783

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4,950

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$4.783

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RS (Exports)

UK . 355 parts In-Stock

1+ parts

-

100+ parts

$5.337

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$4.926

10k+ parts

$4.804

355

-

$5.337

$4.926

$4.804

Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$2.904

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100

$2.904

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Digiode

USA . 2,200 parts In-Stock

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$5.852

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$5.852

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Flip Electronics

USA . 4,950 parts In-Stock

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Vyrian

USA . 614 parts In-Stock

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614

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Corohmni

South Africa . 332 parts In-Stock

1+ parts

$2.846

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332

$2.846

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Netroflash

USA . 50 parts In-Stock

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$2.904

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50

$2.904

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Ampacity Inc.

Singapore . 571 parts In-Stock

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$3.050

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571

$3.050

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Corphita

USA . 1,897 parts In-Stock

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$5.544

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1,897

$5.544

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Microchip USA

USA . 5,617 parts In-Stock

1+ parts

$15.430

100+ parts

$15.210

1k+ parts

$15.100

10k+ parts

$14.990

5,617

$15.430

$15.210

$15.100

$14.990

Infinite Electronics LLP (Excess)

. 7,207 parts In-Stock

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7,207

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TANS Electronics

Latvia . 5,787 parts In-Stock

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Problanco Electronics

Mexico . 5,540 parts In-Stock

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SupplyDigital Components

Austria . 4,747 parts In-Stock

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Kulean Microsystems

USA . 4,226 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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3,500

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GreenTree Electronics

Israel . 1,500 parts In-Stock

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UHIMA Technologies

Türkiye . 790 parts In-Stock

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790

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Perfect Parts

USA . 437 parts In-Stock

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437

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Overview

Unlock the power of efficiency with the FFSH1065B-F085 by Onsemi. As a leading manufacturer in the field of Diodes & Rectifiers, Onsemi delivers top-notch quality and reliability. This Schottky rectifier diode offers a maximum reverse test voltage of 650V and a maximum output current of 11.5A, making it ideal for applications where high efficiency is crucial. With a maximum power dissipation of 83W and a wide operating temperature range, this diode is built to last. Trust Onsemi to provide you with the cutting-edge technology you need to stay ahead of the curve.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for a variety of environments.

Maximum Reverse Current: 40 uA

Low reverse current ensures efficient performance and minimal power loss.

Reverse Test Voltage: 650 V

High reverse test voltage allows for reliable operation in high voltage applications.

Maximum Operating Temperature: 175 °C

Wide operating temperature range enables the diode to function in extreme conditions.

Maximum Power Dissipation: 83 W

High power dissipation capability ensures the diode can handle heavy loads without overheating.

Diode Type: RECTIFIER DIODE

Rectifier diode design allows for efficient conversion of AC to DC current, making it ideal for power supply circuits.

Technology: SCHOTTKY

Schottky technology provides low forward voltage drop and fast switching speeds, improving efficiency.

Maximum Output Current: 11.5 A

High output current rating allows the diode to handle substantial current flow, making it suitable for power applications.

Technical Specifications

Diodes & Rectifiers FFSH1065B-F085 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.7 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

42 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

11.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

83 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

40 uA

Reverse Test Voltage:

650 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

FFSH1065B-F085 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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