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FFSH1665ADN-F155

Onsemi

FFSH1665ADN-F155 by Onsemi

FFSH1665ADN-F155 by Onsemi is a common cathode diode with 2 elements, featuring a max reverse current of 200uA and a reverse test voltage of 650V. It is designed for efficiency applications, operating b/w -55 to 175°C with a max power dissipation of 77W.

Median Price

$7.830

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 433 parts In-Stock

1+ parts

$7.830

100+ parts

$3.870

1k+ parts

$3.820

10k+ parts

-

433

$7.830

$3.870

$3.820

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DigiKey

USA . 60 parts In-Stock

1+ parts

$7.840

100+ parts

-

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$3.340

10k+ parts

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60

$7.840

-

$3.340

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Chip1Stop

Japan . 225 parts In-Stock

1+ parts

$22.700

100+ parts

$10.000

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225

$22.700

$10.000

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Rochester

USA . 2,425 parts In-Stock

1+ parts

-

100+ parts

$3.330

1k+ parts

$2.980

10k+ parts

$2.810

2,425

-

$3.330

$2.980

$2.810

Verical

USA . 2,250 parts In-Stock

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-

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$3.361

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2,250

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$3.361

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Distributors (In-Stock)

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Digiode

USA . 1,710 parts In-Stock

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$3.524

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$3.524

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Vyrian

USA . 6,151 parts In-Stock

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6,151

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DigiKey Marketplace

USA . 2,425 parts In-Stock

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2,425

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Flip Electronics

USA . 2,250 parts In-Stock

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2,250

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Distributors (Availability)

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Corphita

USA . 2,171 parts In-Stock

1+ parts

$3.339

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2,171

$3.339

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Corohmni

South Africa . 237 parts In-Stock

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$3.501

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237

$3.501

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Microchip USA

USA . 169 parts In-Stock

1+ parts

$27.100

100+ parts

$26.720

1k+ parts

$26.520

10k+ parts

$26.330

169

$27.100

$26.720

$26.520

$26.330

Problanco Electronics

Mexico . 7,462 parts In-Stock

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7,462

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SupplyDigital Components

Austria . 6,481 parts In-Stock

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TANS Electronics

Latvia . 4,138 parts In-Stock

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Kulean Microsystems

USA . 3,411 parts In-Stock

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Perfect Parts

USA . 1,921 parts In-Stock

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Northwest PG Solutions

USA . 1,469 parts In-Stock

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1,469

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Native Components

USA . 805 parts In-Stock

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805

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GreenTree Electronics

Israel . 325 parts In-Stock

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325

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UHIMA Technologies

Türkiye . 310 parts In-Stock

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310

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Authorized Procurement Solutions

USA . 255 parts In-Stock

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255

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Overview

Unlock a world of efficiency with the FFSH1665ADN-F155 by Onsemi. As a leader in diodes and rectifiers, Onsemi delivers superior quality and performance with this product. Perfect for applications where high efficiency is crucial, this diode offers a maximum forward voltage of 1.75V and a maximum output current of 11A. With a maximum reverse test voltage of 650V, the FFSH1665ADN-F155 provides reliable power management solutions. Trust Onsemi to provide exceptional value and benefits with this top-of-the-line diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the diodes, making them suitable for various applications.

Maximum Reverse Current: 200 uA

Low reverse current ensures minimal power loss in the circuit and overall higher efficiency.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions and high power dissipation.

Diode Type: RECTIFIER DIODE

Rectifier diodes are ideal for converting AC to DC, making this product suitable for power supply applications.

Technical Specifications

Diodes & Rectifiers FFSH1665ADN-F155 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-247AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

730 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

11 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

77 W

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

650 V

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

FFSH1665ADN-F155 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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