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FFSH30120A

Onsemi

FFSH30120A by Onsemi

FFSH30120A by Onsemi is a single rectifier diode with 1200V reverse test voltage and 46A output current. It has a max power dissipation of 500W, making it suitable for high-efficiency applications. With a temperature range from -55 to 175°C, this silicon carbide diode is ideal for various industrial uses.

Median Price

$10.834

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 866 parts In-Stock

1+ parts

-

100+ parts

$9.630

1k+ parts

$8.620

10k+ parts

$8.110

866

-

$9.630

$8.620

$8.110

EBV Elektronik

Germany . 750 parts In-Stock

1+ parts

-

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-

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750

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Verical

USA . 563 parts In-Stock

1+ parts

-

100+ parts

$12.037

1k+ parts

$10.775

10k+ parts

$10.137

563

-

$12.037

$10.775

$10.137

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 434 parts In-Stock

1+ parts

$10.184

100+ parts

-

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434

$10.184

-

-

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Nova Conductors

Japan . 68 parts In-Stock

1+ parts

$17.526

100+ parts

-

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68

$17.526

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Flip Electronics

USA . 18,000 parts In-Stock

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18,000

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Vyrian

USA . 4,039 parts In-Stock

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4,039

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 253 parts In-Stock

1+ parts

$0.090

100+ parts

-

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253

$0.090

-

-

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Semicontronic

India . 500 parts In-Stock

1+ parts

$9.110

100+ parts

$8.882

1k+ parts

$8.837

10k+ parts

-

500

$9.110

$8.882

$8.837

-

Corphita

USA . 2,016 parts In-Stock

1+ parts

$9.648

100+ parts

-

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2,016

$9.648

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Corohmni

South Africa . 467 parts In-Stock

1+ parts

$10.720

100+ parts

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467

$10.720

-

-

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Continental Prestige Electronics

USA . 2,294 parts In-Stock

1+ parts

$17.526

100+ parts

-

1k+ parts

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10k+ parts

$17.175

2,294

$17.526

-

-

$17.175

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$17.526

100+ parts

-

1k+ parts

$16.650

10k+ parts

$16.299

1,000

$17.526

-

$16.650

$16.299

Ampacity Inc.

Singapore . 555 parts In-Stock

1+ parts

$19.830

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555

$19.830

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AZTECH Wire

Italy . 39 parts In-Stock

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$20.600

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39

$20.600

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Microchip USA

USA . 5,862 parts In-Stock

1+ parts

$48.104

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5,862

$48.104

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Problanco Electronics

Mexico . 8,249 parts In-Stock

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8,249

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SupplyDigital Components

Austria . 6,710 parts In-Stock

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6,710

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Argo Parts USA

USA . 3,971 parts In-Stock

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3,971

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Kulean Microsystems

USA . 3,537 parts In-Stock

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3,537

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Perfect Parts

USA . 1,999 parts In-Stock

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TANS Electronics

Latvia . 1,135 parts In-Stock

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1,135

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UHIMA Technologies

Türkiye . 268 parts In-Stock

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268

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Authorized Procurement Solutions

USA . 200 parts In-Stock

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200

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iodParts Technologies Inc.

India . 150 parts In-Stock

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150

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GreenTree Electronics

Israel . 60 parts In-Stock

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60

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Overview

Looking for a reliable and efficient solution for your rectification needs? Look no further than the FFSH30120A by Onsemi. With a reputation for top-quality products, Onsemi delivers diodes and rectifiers that are guaranteed to perform at the highest level. The FFSH30120A is perfect for applications requiring high efficiency, offering a maximum reverse voltage of 1200V and a maximum output current of 46A. Trust Onsemi to provide you with the value, benefits, and advantages you need to take your projects to the next level. Elevate your efficiency with the FFSH30120A today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Maximum Reverse Current: 200 uA

Low reverse current ensures efficient operation and minimal power loss.

Maximum Reverse Test Voltage: 1200 V

High reverse test voltage ensures reliable performance and protection against voltage spikes.

Maximum Power Dissipation: 500 W

High power dissipation capacity allows the diode to handle high power loads without overheating.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications, ensuring efficient conversion of AC to DC.

Technology: AVALANCHE

Avalanche diodes are known for their ability to handle high voltages and currents, making them suitable for demanding applications.

Diode Element Material: SILICON CARBIDE

Silicon carbide diodes offer high efficiency, fast switching speeds, and low forward voltage drop, making them ideal for high-power applications.

Technical Specifications

Diodes & Rectifiers FFSH30120A attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-247AB

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

1400 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

46 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

500 W

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

1200 V

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

FFSH30120A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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