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FFSH20120A-F085

Onsemi

FFSH20120A-F085 by Onsemi

FFSH20120A-F085 by Onsemi is a Schottky rectifier diode with 1200V reverse test voltage and 30A output current. It has a max power dissipation of 273W, making it suitable for high-efficiency applications. With a temperature range from -55 to 175°C, this diode is ideal for various industrial uses.

Median Price

$10.110

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 303 parts In-Stock

1+ parts

$11.120

100+ parts

-

1k+ parts

$8.440

10k+ parts

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303

$11.120

-

$8.440

-

DigiKey

USA . 33 parts In-Stock

1+ parts

$14.220

100+ parts

$8.668

1k+ parts

$7.281

10k+ parts

-

33

$14.220

$8.668

$7.281

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Chip1Stop

Japan . 140 parts In-Stock

1+ parts

$41.200

100+ parts

$19.500

1k+ parts

-

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140

$41.200

$19.500

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Verical

USA . 12,950 parts In-Stock

1+ parts

-

100+ parts

$9.100

1k+ parts

$8.137

10k+ parts

$7.662

12,950

-

$9.100

$8.137

$7.662

Rochester

USA . 12,950 parts In-Stock

1+ parts

-

100+ parts

$7.280

1k+ parts

$6.510

10k+ parts

$6.130

12,950

-

$7.280

$6.510

$6.130

Flip Electronics (Authorized)

USA . 2,496 parts In-Stock

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2,496

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Arrow

USA . 300 parts In-Stock

1+ parts

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100+ parts

$8.618

1k+ parts

$7.399

10k+ parts

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300

-

$8.618

$7.399

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 74 parts In-Stock

1+ parts

$5.078

100+ parts

-

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74

$5.078

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-

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Nova Conductors

Japan . 550 parts In-Stock

1+ parts

$14.734

100+ parts

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550

$14.734

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-

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Flip Electronics

USA . 2,496 parts In-Stock

1+ parts

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100+ parts

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2,496

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Vyrian

USA . 2,171 parts In-Stock

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2,171

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NAC Semi

USA . 900 parts In-Stock

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900

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IBS Electronics

USA . 900 parts In-Stock

1+ parts

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100+ parts

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$10.575

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900

-

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$10.575

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Rapid Electronics

USA . 410 parts In-Stock

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100+ parts

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410

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 399 parts In-Stock

1+ parts

$0.078

100+ parts

-

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399

$0.078

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Modulus Dynamics

Lithuania . 19,683 parts In-Stock

1+ parts

$0.149

100+ parts

$0.149

1k+ parts

$0.149

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19,683

$0.149

$0.149

$0.149

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Ampacity Inc.

Singapore . 2,071 parts In-Stock

1+ parts

$4.540

100+ parts

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2,071

$4.540

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Semicontronic

India . 1,954 parts In-Stock

1+ parts

$4.540

100+ parts

$4.426

1k+ parts

$4.404

10k+ parts

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1,954

$4.540

$4.426

$4.404

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Corphita

USA . 217 parts In-Stock

1+ parts

$4.810

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217

$4.810

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Corohmni

South Africa . 431 parts In-Stock

1+ parts

$5.345

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431

$5.345

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Continental Prestige Electronics

USA . 3,607 parts In-Stock

1+ parts

$14.734

100+ parts

-

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$14.439

3,607

$14.734

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$14.439

Netroflash

USA . 50 parts In-Stock

1+ parts

$14.734

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50

$14.734

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Microchip USA

USA . 7,081 parts In-Stock

1+ parts

$46.060

100+ parts

$45.400

1k+ parts

$45.070

10k+ parts

$44.740

7,081

$46.060

$45.400

$45.070

$44.740

QUARKTWIN TECHNOLOGY LTD

USA . 9,127 parts In-Stock

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9,127

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Kulean Microsystems

USA . 8,096 parts In-Stock

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SupplyDigital Components

Austria . 7,056 parts In-Stock

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7,056

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Problanco Electronics

Mexico . 4,258 parts In-Stock

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4,258

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Argo Parts USA

USA . 4,138 parts In-Stock

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TANS Electronics

Latvia . 3,639 parts In-Stock

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3,639

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Perfect Parts

USA . 2,738 parts In-Stock

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2,738

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GreenTree Electronics

Israel . 690 parts In-Stock

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690

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UHIMA Technologies

Türkiye . 580 parts In-Stock

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580

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Authorized Procurement Solutions

USA . 140 parts In-Stock

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140

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Overview

Discover the unparalleled quality and reliability of the FFSH20120A-F085 by Onsemi, a leading manufacturer in the industry of Diodes & Rectifiers. This product offers exceptional value with its high efficiency and maximum power dissipation of 273W, making it ideal for a wide range of applications. Whether you need a single rectifier diode for your project or are looking for a durable solution for demanding environments, this SCHOTTKY technology-based diode will exceed your expectations. Trust Onsemi's expertise and innovation to deliver top-notch performance and peace of mind with every use.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Durable material for long-lasting usage.

Config:

SINGLE - Simple and easy to use configuration.

Max Reverse Current:

200 uA - Low reverse current for efficiency.

Package Shape:

RECTANGULAR - Compact design for space-saving.

Reverse Test Voltage:

1200 V - High reverse voltage for protection.

No. of Terminals:

2 - Standard number of terminals for easy installation.

Package Style:

FLANGE MOUNT - Secure mounting for stability.

Application:

EFFICIENCY - Designed for optimal efficiency in use.

Max Operating Temperature:

175 °C - Can operate in high temperature environments.

Min Operating Temperature:

55 °C - Can operate in low temperature environments.

Terminal Finish:

Matte Tin (Sn) - annealed - Resistant finish for longevity.

Terminal Position:

SINGLE - Single terminal placement for simplicity.

Max Power Dissipation:

273 W - High power dissipation for heavy-duty use.

Reference Standard:

AEC-Q101 - Meets industry standards for quality.

Diode Type:

RECTIFIER DIODE - Efficient diode for voltage conversion.

Max Forward Voltage (VF):

1.75 V - Low forward voltage drop for energy savings.

Max Output Current:

30 A - High output current for demanding applications.

Technology:

SCHOTTKY - Schottky technology for fast switching.

Terminal Form:

THROUGH-HOLE - Easy to solder terminal form.

Max Repetitive Peak Reverse Voltage:

1200 V - High peak reverse voltage for protection.

Max Non Repetitive Peak Forward Current:

135 A - High peak forward current for robust performance.

Diode Element Material:

SILICON CARBIDE - Durable material for reliability.

Technical Specifications

Diodes & Rectifiers FFSH20120A-F085 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-247AB

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

135 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

273 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

1200 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Trade Compliance

FFSH20120A-F085 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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