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NRVBSS23FA

Onsemi

NRVBSS23FA by Onsemi

NRVBSS23FA by Onsemi is a Schottky rectifier diode with a max reverse recovery time of 0.01 us and max output current of 2A. It is designed for efficiency applications, operating b/w -55 to 125 °C, with a peak reflow temperature of 260 °C.

Median Price

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Lifecycle Status

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1k+

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Vyrian

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Digiode

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AZTECH Wire

Italy . 673 parts In-Stock

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Kulean Microsystems

USA . 6,655 parts In-Stock

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Problanco Electronics

Mexico . 2,375 parts In-Stock

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TANS Electronics

Latvia . 2,347 parts In-Stock

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SupplyDigital Components

Austria . 2,071 parts In-Stock

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Corohmni

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Microchip USA

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UHIMA Technologies

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Overview

Discover the NRVBSS23FA by Onsemi, a top-of-the-line rectifier diode that guarantees high efficiency and reliability in a compact package. Onsemi, a trusted manufacturer in the industry, ensures that this diode meets the highest quality standards for various applications. With a maximum reverse recovery time of 0.01 us and a maximum output current of 2A, this diode is perfect for projects where precision and performance are essential. Upgrade your electronic designs with the NRVBSS23FA and experience the benefits of superior technology and value that only Onsemi can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good protection and insulation for the diode, making it durable and reliable for long-term use.

Config: SINGLE

Single configuration simplifies the circuit design and makes installation easier.

Surface Mount: YES

Surface mount feature allows for easy and compact integration onto circuit boards.

Maximum Reverse Recovery Time: 0.01 us

The fast reverse recovery time ensures efficient and quick switching of the diode during operation.

Maximum Output Current: 2 A

With a high maximum output current, this diode can handle large loads and provide reliable performance.

Technology: SCHOTTKY

Schottky technology offers low forward voltage drop and fast switching speeds, resulting in improved efficiency and reduced power losses.

Technical Specifications

Diodes & Rectifiers NRVBSS23FA attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.5 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

400 uA

Maximum Reverse Recovery Time:

.01 us

Reverse Test Voltage:

30 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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