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RHRP8120-F102

Onsemi

RHRP8120-F102 by Onsemi

RHRP8120-F102 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.07 us and a max output current of 8 A. It is designed for hyperfast soft recovery applications, featuring a max reverse test voltage of 1200 V and operating temperature range from -65 to 175 °C.

Median Price

$0.198

Lifecycle Status

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6

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1k+

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Adafruit Industries

USA . 40 parts In-Stock

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$0.198

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$0.180

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$0.162

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40

$0.198

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$0.162

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EBV Elektronik

Germany . 1,400 parts In-Stock

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Digiode

USA . 1,118 parts In-Stock

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$0.188

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Nova Conductors

Japan . 77 parts In-Stock

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Flip Electronics

USA . 39,200 parts In-Stock

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Vyrian

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Modulus Dynamics

Lithuania . 34,991 parts In-Stock

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$0.036

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$0.036

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$0.036

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34,991

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$0.036

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Aztec Data Supply Inc.

USA . 200 parts In-Stock

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$0.114

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Ampacity Inc.

Singapore . 629 parts In-Stock

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$0.168

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629

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Semicontronic

India . 564 parts In-Stock

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$0.168

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$0.164

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$0.163

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Corphita

USA . 1,432 parts In-Stock

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$0.178

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Corohmni

South Africa . 81 parts In-Stock

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$0.162

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Netroflash

USA . 2,000 parts In-Stock

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$1.110

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$1.055

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$1.032

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Argo Parts USA

USA . 1,870 parts In-Stock

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Continental Prestige Electronics

USA . 766 parts In-Stock

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$1.088

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$1.088

AZTECH Wire

Italy . 294 parts In-Stock

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$16.680

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Infinite Electronics LLP (Excess)

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

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TANS Electronics

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Kulean Microsystems

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Problanco Electronics

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Perfect Parts

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UHIMA Technologies

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GreenTree Electronics

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Authorized Procurement Solutions

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Overview

Experience the exceptional quality and performance of the RHRP8120-F102 by Onsemi, a leading manufacturer in diodes & rectifiers. This hyperfast soft recovery diode offers unparalleled reliability and efficiency for a wide range of applications. With a maximum reverse voltage of 1200V and a maximum output current of 8A, this diode is perfect for high-power electronic systems. Trust Onsemi to deliver cutting-edge technology and superior products that meet your needs with precision and excellence. Elevate your projects with the RHRP8120-F102 and experience the difference firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a durable and robust packaging for the diode, ensuring long-term reliability and protection against environmental factors.

Maximum Reverse Recovery Time: 0.07 us

The fast reverse recovery time of 0.07 us allows for efficient switching and high-speed operation, making it ideal for applications that require quick response times.

Maximum Reverse Current: 100 uA

With low reverse current of 100 uA, this diode offers high efficiency and reduced power loss in reverse bias conditions.

Maximum Operating Temperature: 175 °C

The wide operating temperature range of -65 to 175°C makes this diode suitable for use in a variety of environments and applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product can efficiently convert AC to DC, making it suitable for power supply and rectification applications.

Maximum Forward Voltage (VF): 3.2 V

The low forward voltage drop of 3.2 V minimizes power dissipation and improves efficiency in forward bias operation.

Technology: AVALANCHE

The avalanche technology used in this diode allows it to handle high voltage and current transient conditions, making it suitable for surge protection and high-power applications.

Technical Specifications

Diodes & Rectifiers RHRP8120-F102 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HYPERFAST SOFT RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

3.2 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

75 W

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.07 us

Reverse Test Voltage:

1200 V

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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