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MURF1620CTGS

Onsemi

MURF1620CTGS by Onsemi

MURF1620CTGS by Onsemi is a common cathode diode with ultra-fast recovery power. It has a max reverse recovery time of 0.035 us, max output current of 8A, and a max reverse test voltage of 200V. Ideal for applications requiring high-speed rectification in electronic circuits.

Median Price

$1.069

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 398 parts In-Stock

1+ parts

-

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-

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$1.069

10k+ parts

$0.953

398

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-

$1.069

$0.953

Rochester

USA . 98 parts In-Stock

1+ parts

-

100+ parts

$1.030

1k+ parts

$0.855

10k+ parts

$0.762

98

-

$1.030

$0.855

$0.762

DigiKey

USA . 98 parts In-Stock

1+ parts

-

100+ parts

$3.060

1k+ parts

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98

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$3.060

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Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.803

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100

$0.803

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Digiode

USA . 2,041 parts In-Stock

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$0.803

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2,041

$0.803

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Vyrian

USA . 3,763 parts In-Stock

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3,763

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Distributors (Availability)

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Ampacity Inc.

Singapore . 771 parts In-Stock

1+ parts

$0.720

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771

$0.720

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Corphita

USA . 643 parts In-Stock

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$0.760

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643

$0.760

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Corohmni

South Africa . 341 parts In-Stock

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$0.787

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341

$0.787

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Continental Prestige Electronics

USA . 5,105 parts In-Stock

1+ parts

$0.803

100+ parts

-

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$0.787

5,105

$0.803

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-

$0.787

Argo Parts USA

USA . 1,565 parts In-Stock

1+ parts

$0.803

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1,565

$0.803

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Bastille Electronics

Australia . 100 parts In-Stock

1+ parts

$0.803

100+ parts

$0.763

1k+ parts

$0.725

10k+ parts

$0.715

100

$0.803

$0.763

$0.725

$0.715

Microchip USA

USA . 3,670 parts In-Stock

1+ parts

$5.265

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3,670

$5.265

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Kulean Microsystems

USA . 6,757 parts In-Stock

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6,757

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Problanco Electronics

Mexico . 4,193 parts In-Stock

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4,193

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TANS Electronics

Latvia . 3,424 parts In-Stock

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3,424

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UHIMA Technologies

Türkiye . 278 parts In-Stock

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278

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SupplyDigital Components

Austria . 43 parts In-Stock

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43

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Overview

Experience superior performance and reliability with the MURF1620CTGS by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality diodes & rectifiers like this one that are perfect for ultra-fast recovery power applications. With common cathode configuration and a maximum output current of 8A, this product offers exceptional value and benefits to our customers. Trust in Onsemi's expertise and choose the MURF1620CTGS for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring long-lasting performance in various environments.

Maximum Reverse Recovery Time: 0.035 us

Ultra-fast recovery time improves efficiency and reliability in high-speed applications.

Maximum Reverse Current: 5 uA

Low reverse current minimizes losses and enhances energy efficiency of the system.

Reverse Test Voltage: 200 V

Sufficient reverse test voltage capacity for reliable performance in power applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for versatile use in different thermal conditions.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification purposes, ensuring optimal performance in power conversion applications.

Technical Specifications

Diodes & Rectifiers MURF1620CTGS attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.975 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.035 us

Reverse Test Voltage:

200 V

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Trade Compliance

MURF1620CTGS Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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