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MURF1660CTG

Onsemi

MURF1660CTG by Onsemi

MURF1660CTG by Onsemi is a common cathode diode with ultra-fast recovery power. It has a max reverse recovery time of 0.06 us, max forward voltage of 1.5V, and can handle up to 8A output current. Ideal for applications requiring high-speed rectification in electronic circuits.

Median Price

$1.069

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 532 parts In-Stock

1+ parts

$0.633

100+ parts

$0.633

1k+ parts

$0.633

10k+ parts

$0.633

532

$0.633

$0.633

$0.633

$0.633

Farnell

UK . 380 parts In-Stock

1+ parts

$1.350

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-

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380

$1.350

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Verical

USA . 520 parts In-Stock

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$1.262

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520

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$1.262

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Adafruit Industries

USA . 500 parts In-Stock

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500

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Rochester

USA . 24 parts In-Stock

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$1.010

1k+ parts

$0.841

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$0.750

24

-

$1.010

$0.841

$0.750

Avnet

USA . 20 parts In-Stock

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$1.069

1k+ parts

$0.987

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20

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$1.069

$0.987

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Distributors (In-Stock)

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Digiode

USA . 2,145 parts In-Stock

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$0.829

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2,145

$0.829

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Nova Conductors

Japan . 600 parts In-Stock

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$1.538

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600

$1.538

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Chip Stock

USA . 7,703 parts In-Stock

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Vyrian

USA . 1,979 parts In-Stock

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Flip Electronics

USA . 250 parts In-Stock

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250

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NAC Semi

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40

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PC Components Company LLC

USA . 30 parts In-Stock

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30

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Bristol Electronics

USA . 30 parts In-Stock

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30

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,073 parts In-Stock

1+ parts

$0.054

100+ parts

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1,073

$0.054

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Semicontronic

India . 420 parts In-Stock

1+ parts

$0.710

100+ parts

$0.692

1k+ parts

$0.689

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420

$0.710

$0.692

$0.689

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Ampacity Inc.

Singapore . 100 parts In-Stock

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$0.710

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100

$0.710

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Corphita

USA . 2,319 parts In-Stock

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$0.786

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2,319

$0.786

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Corohmni

South Africa . 134 parts In-Stock

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$0.873

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134

$0.873

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Continental Prestige Electronics

USA . 5,332 parts In-Stock

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$1.538

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$1.508

5,332

$1.538

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$1.508

Argo Parts USA

USA . 519 parts In-Stock

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$1.538

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519

$1.538

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AZTECH Wire

Italy . 471 parts In-Stock

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$10.640

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471

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Lixinc

USA . 15,327 parts In-Stock

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Kepictronics

USA . 15,000 parts In-Stock

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Kulean Microsystems

USA . 8,377 parts In-Stock

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SupplyDigital Components

Austria . 6,853 parts In-Stock

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TANS Electronics

Latvia . 5,074 parts In-Stock

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Perfect Parts

USA . 3,260 parts In-Stock

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Problanco Electronics

Mexico . 3,095 parts In-Stock

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Advanced Electronics

New Zealand . 500 parts In-Stock

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UHIMA Technologies

Türkiye . 383 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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$1.508

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$1.462

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$1.431

100

-

$1.508

$1.462

$1.431

Overview

Experience the superior performance and reliability of the MURF1660CTG diode by Onsemi. With a focus on quality and innovation, Onsemi is a trusted manufacturer in the industry. This diode is perfect for ultra-fast recovery power applications, offering a common cathode configuration with two elements for maximum efficiency. Its durable construction and high operating temperature range make it a versatile and reliable choice for your electronic projects. Trust Onsemi to provide the quality and value you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliable performance in various operating conditions.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements offers efficient power distribution and enhanced circuit protection.

Maximum Reverse Recovery Time: 0.06 us

A fast reverse recovery time of 0.06 us allows for swift switching and improved overall efficiency.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easy installation and integration into different systems.

No. of Terminals: 3

With 3 terminals, this diode offers flexibility in connection options for various circuit designs.

Package Style (Meter): FLANGE MOUNT

The flange mount package style ensures secure mounting and reliable performance in high vibration environments.

Application: ULTRA FAST RECOVERY POWER

Specifically designed for ultra fast recovery power applications, making it ideal for high-speed circuits and systems.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this diode can withstand elevated temperatures without performance degradation.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature of -65°C allows for reliable operation in extreme cold environments.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring long-term reliability.

Terminal Position: SINGLE

Single terminal position simplifies installation and reduces complexity in circuit connections.

Case Connection: ISOLATED

Isolated case connection design enhances safety and prevents potential short circuits in the system.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, this product is optimized for converting AC to DC with minimal loss and high efficiency.

Maximum Forward Voltage (VF): 1.5 V

With a low maximum forward voltage of 1.5V, the diode minimizes power consumption and heat dissipation.

Maximum Output Current: 8 A

Capable of handling a high maximum output current of 8A, making it suitable for power-hungry applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for easy mounting on PCBs and provides secure connections.

No. of Elements: 2

This diode consists of 2 elements, providing redundancy and increased reliability in circuit designs.

Maximum Repetitive Peak Reverse Voltage: 600 V

With a high maximum repetitive peak reverse voltage of 600V, this diode offers robust protection against voltage spikes.

Maximum Non Repetitive Peak Forward Current: 100 A

Capable of handling a maximum non-repetitive peak forward current of 100A, ensuring reliability in high-current applications.

Diode Element Material: SILICON

Made of silicon, a common semiconductor material known for its reliability and efficiency in diode applications.

Technical Specifications

Diodes & Rectifiers MURF1660CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.06 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MURF1660CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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