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MURF820

Onsemi

MURF820 by Onsemi

MURF820 by Onsemi is a single rectifier diode with a max forward voltage of 0.975V and output current of 8A. It has an ultra-fast recovery time of 0.035us, making it ideal for high-power applications at temperatures up to 150 °C. The diode is designed for use in isolated flange mount packages, recognized under UL standards.

Median Price

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Lifecycle Status

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Digiode

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LIBRA Elektronik GmbH

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ACDS - Activité Composants Distribution Service

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PC Components Company LLC

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Bristol Electronics

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Problanco Electronics

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SupplyDigital Components

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Kulean Microsystems

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TANS Electronics

Latvia . 2,146 parts In-Stock

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UHIMA Technologies

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Overview

Experience the superior quality of the MURF820 diode by Onsemi, a leader in innovative semiconductor solutions. Designed for ultra-fast recovery power applications, this rectifier diode offers unmatched performance and reliability. With a maximum output current of 8A and a maximum repetitive peak reverse voltage of 200V, this product is ideal for various electronic circuits. Trust Onsemi's expertise and choose the MURF820 for your next project to ensure efficient and dependable operation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this diode lightweight and durable, perfect for various applications.

Maximum Reverse Recovery Time: 0.035 us

With a fast reverse recovery time of 0.035 microseconds, this diode ensures efficient and quick switching, making it ideal for ultra-fast recovery power applications.

Maximum Operating Temperature: 150 °C

The diode can operate at high temperatures up to 150 °C, ensuring reliable performance even in demanding conditions.

Maximum Output Current: 8 A

Capable of handling high output currents up to 8 amps, this diode is suitable for power electronics applications requiring high current levels.

Maximum Repetitive Peak Reverse Voltage: 200 V

With a maximum repetitive peak reverse voltage of 200 volts, this diode provides robust reverse voltage protection for the circuit.

Technical Specifications

Diodes & Rectifiers MURF820 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.975 V

JEDEC-95 Code:

TO-220

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MURF820 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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