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NRVS1GHE

Onsemi

NRVS1GHE by Onsemi

NRVS1GHE by Onsemi is a single rectifier diode with a max reverse recovery time of 0.782 us and max forward voltage of 1.1 V. It is designed for efficiency applications, operating b/w -55 to 175 °C, with a peak reflow temperature of 260 C.

Median Price

$0.332

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5,942 parts In-Stock

1+ parts

$0.510

100+ parts

$0.179

1k+ parts

$0.143

10k+ parts

$0.113

5,942

$0.510

$0.179

$0.143

$0.113

DigiKey

USA . 2,950 parts In-Stock

1+ parts

$0.720

100+ parts

$0.285

1k+ parts

$0.194

10k+ parts

$0.140

2,950

$0.720

$0.285

$0.194

$0.140

Verical

USA . 909,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

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$0.114

909,000

-

-

-

$0.114

Rochester

USA . 2,400 parts In-Stock

1+ parts

-

100+ parts

$0.154

1k+ parts

$0.128

10k+ parts

$0.114

2,400

-

$0.154

$0.128

$0.114

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 59 parts In-Stock

1+ parts

$0.166

100+ parts

-

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59

$0.166

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Flip Electronics

USA . 855,000 parts In-Stock

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855,000

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Vyrian

USA . 5,573 parts In-Stock

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5,573

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Digiode

USA . 199 parts In-Stock

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199

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Distributors (Availability)

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Corohmni

South Africa . 191 parts In-Stock

1+ parts

$0.163

100+ parts

-

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-

191

$0.163

-

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Continental Prestige Electronics

USA . 1,495 parts In-Stock

1+ parts

$0.166

100+ parts

-

1k+ parts

-

10k+ parts

$0.163

1,495

$0.166

-

-

$0.163

Argo Parts USA

USA . 58 parts In-Stock

1+ parts

$0.166

100+ parts

-

1k+ parts

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$0.161

58

$0.166

-

-

$0.161

Ampacity Inc.

Singapore . 1,183 parts In-Stock

1+ parts

$1.010

100+ parts

-

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1,183

$1.010

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AZTECH Wire

Italy . 768 parts In-Stock

1+ parts

$6.164

100+ parts

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768

$6.164

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TANS Electronics

Latvia . 7,503 parts In-Stock

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7,503

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Problanco Electronics

Mexico . 2,729 parts In-Stock

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2,729

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Kulean Microsystems

USA . 1,524 parts In-Stock

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1,524

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Corphita

USA . 1,475 parts In-Stock

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1,475

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SupplyDigital Components

Austria . 1,267 parts In-Stock

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1,267

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UHIMA Technologies

Türkiye . 418 parts In-Stock

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418

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Overview

Discover the NRVS1GHE by Onsemi, a high-quality rectifier diode that offers unparalleled efficiency and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode is designed for applications where precision and performance are key. With a maximum forward voltage of 1.1V and a maximum output current of 1A, this diode provides exceptional value and benefits to customers seeking superior electronic components. Whether you're working on automotive, industrial, or consumer electronics projects, the NRVS1GHE is the perfect choice for your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material provides good insulation and protection for the diode, ensuring reliable performance and longevity.

Config: SINGLE

Single configuration makes it easy to design and incorporate into circuits, simplifying installation and maintenance.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly onto circuit boards, saving space and reducing manufacturing costs.

Maximum Reverse Recovery Time: 0.782 us

Low reverse recovery time ensures fast switching and efficient operation of the diode, making it suitable for high-speed applications.

Maximum Reverse Current: 1 uA

Minimal reverse current leakage helps in maintaining low power consumption and improving overall efficiency of the circuit.

Application: EFFICIENCY

Designed for efficiency applications, this diode helps in maximizing energy conversion and reducing power losses.

Maximum Operating Temperature: 175 °C

High maximum operating temperature tolerance allows for reliable performance even under demanding environmental conditions.

Minimum Operating Temperature: -55 °C

Wide operating temperature range enables this diode to be used in a variety of industrial and automotive applications.

Maximum Repetitive Peak Reverse Voltage: 400 V

High reverse voltage rating makes this diode suitable for use in circuits that require voltage regulation and overvoltage protection.

Technical Specifications

Diodes & Rectifiers NRVS1GHE attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

20 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

1 uA

Maximum Reverse Recovery Time:

.782 us

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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