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NRVS1JHE

Onsemi

NRVS1JHE by Onsemi

NRVS1JHE by Onsemi is a single rectifier diode with a max reverse recovery time of 0.782 us and max output current of 1 A. It is designed for efficiency applications, operating b/w -55 to 175 °C, with a package style of small outline.

Median Price

$0.560

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 500 parts In-Stock

1+ parts

$0.560

100+ parts

$0.239

1k+ parts

$0.161

10k+ parts

$0.114

500

$0.560

$0.239

$0.161

$0.114

DigiKey

USA . 3,952 parts In-Stock

1+ parts

$0.650

100+ parts

$0.257

1k+ parts

$0.174

10k+ parts

$0.125

3,952

$0.650

$0.257

$0.174

$0.125

Flip Electronics (Authorized)

USA . 561,000 parts In-Stock

1+ parts

-

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561,000

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Verical

USA . 6,000 parts In-Stock

1+ parts

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$0.100

6,000

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-

$0.100

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 277 parts In-Stock

1+ parts

$0.428

100+ parts

-

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277

$0.428

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Vyrian

USA . 645 parts In-Stock

1+ parts

$0.450

100+ parts

-

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645

$0.450

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Bristol Electronics

USA . 2,502,000 parts In-Stock

1+ parts

$0.547

100+ parts

$0.274

1k+ parts

$0.110

10k+ parts

$0.068

2,502,000

$0.547

$0.274

$0.110

$0.068

Flip Electronics

USA . 777,000 parts In-Stock

1+ parts

-

100+ parts

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777,000

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NAC Semi

USA . 36,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

$0.259

36,000

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-

-

$0.259

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,060 parts In-Stock

1+ parts

$0.405

100+ parts

-

1k+ parts

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10k+ parts

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2,060

$0.405

-

-

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Component Stockers USA

USA . 4,074 parts In-Stock

1+ parts

$0.450

100+ parts

$0.210

1k+ parts

$0.130

10k+ parts

-

4,074

$0.450

$0.210

$0.130

-

Corohmni

South Africa . 399 parts In-Stock

1+ parts

$0.450

100+ parts

-

1k+ parts

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10k+ parts

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399

$0.450

-

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SupplyDigital Components

Austria . 8,036 parts In-Stock

1+ parts

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8,036

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Kulean Microsystems

USA . 6,253 parts In-Stock

1+ parts

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6,253

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Problanco Electronics

Mexico . 6,043 parts In-Stock

1+ parts

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6,043

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TANS Electronics

Latvia . 4,258 parts In-Stock

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4,258

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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1,000

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iodParts Technologies Inc.

India . 900 parts In-Stock

1+ parts

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900

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UHIMA Technologies

Türkiye . 47 parts In-Stock

1+ parts

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100+ parts

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47

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Overview

Discover the NRVS1JHE by Onsemi, a top-quality diode & rectifier that offers unparalleled efficiency for a wide range of applications. Made by the trusted manufacturer Onsemi, this product boasts a fast reverse recovery time and low reverse current, making it a reliable choice for your electronic needs. With a small outline package style and dual terminal position, the NRVS1JHE is versatile and easy to use. Whether you're working on automotive electronics or industrial machinery, this rectifier diode delivers high performance and value. Upgrade your projects with the NRVS1JHE and experience the benefits of quality engineering.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring long-lasting performance.

Surface Mount: YES

Allows for easy installation on circuit boards, saving space and time during assembly.

Maximum Reverse Recovery Time: 0.782 us

Fast recovery time ensures efficient operation and minimizes power loss.

Maximum Reverse Current: 1 uA

Low reverse current helps improve overall efficiency and performance of the diode.

Maximum Repetitive Peak Reverse Voltage: 600 V

High reverse voltage capability makes it suitable for a wide range of applications.

Maximum Output Current: 1 A

Capable of handling moderate current levels, making it suitable for various circuits.

Technical Specifications

Diodes & Rectifiers NRVS1JHE attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PDSO-F2

Maximum Non Repetitive Peak Forward Current:

20 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

1 uA

Maximum Reverse Recovery Time:

.782 us

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NRVS1JHE Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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