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NRVS2M

Onsemi

NRVS2M by Onsemi

NRVS2M by Onsemi is a single rectifier diode with a max reverse recovery time of 2 us and max output current of 2 A. It operates in temperatures ranging from -65 to 150 °C and has a peak repetitive reverse voltage of 1000 V. Ideal for applications requiring high power dissipation and low forward voltage drop.

Median Price

$0.820

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,684 parts In-Stock

1+ parts

$0.480

100+ parts

$0.187

1k+ parts

$0.125

10k+ parts

$0.091

1,684

$0.480

$0.187

$0.125

$0.091

Chip1Stop

Japan . 2,820 parts In-Stock

1+ parts

$1.160

100+ parts

$0.314

1k+ parts

$0.183

10k+ parts

-

2,820

$1.160

$0.314

$0.183

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Flip Electronics (Authorized)

USA . 5,890 parts In-Stock

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5,890

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Distributors (In-Stock)

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Digiode

USA . 1,416 parts In-Stock

1+ parts

$0.446

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1,416

$0.446

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Vyrian

USA . 1,465 parts In-Stock

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$0.470

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1,465

$0.470

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Flip Electronics

USA . 5,890 parts In-Stock

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5,890

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,116 parts In-Stock

1+ parts

$0.423

100+ parts

-

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2,116

$0.423

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-

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Corohmni

South Africa . 284 parts In-Stock

1+ parts

$0.470

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284

$0.470

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TANS Electronics

Latvia . 8,262 parts In-Stock

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8,262

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SupplyDigital Components

Austria . 7,922 parts In-Stock

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7,922

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Problanco Electronics

Mexico . 5,922 parts In-Stock

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5,922

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Kulean Microsystems

USA . 5,236 parts In-Stock

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5,236

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Perfect Parts

USA . 3,158 parts In-Stock

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3,158

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UHIMA Technologies

Türkiye . 778 parts In-Stock

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778

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Overview

Discover the NRVS2M by Onsemi, a high-quality rectifier diode designed to meet the demanding standards of AEC-Q101 and UL certification. With a maximum output current of 2A and a maximum repetitive peak reverse voltage of 1000V, this small outline package offers reliable performance in a wide range of applications. From automotive electronics to industrial equipment, the NRVS2M delivers superior power dissipation and fast reverse recovery times, ensuring optimal efficiency and protection for your projects. Trust Onsemi's expertise and innovation to enhance your designs with the NRVS2M diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Maximum Reverse Recovery Time: 2 us

Fast reverse recovery time ensures efficient operation of the diode in switching applications.

Maximum Reverse Current: 1 uA

Low reverse current minimizes power losses and improves overall efficiency.

Maximum Operating Temperature: 150 °C

High operating temperature range allows the diode to function reliably in various environments.

Maximum Power Dissipation: 2.35 W

Allows for handling higher power levels without overheating, ensuring the diode's longevity.

Technical Specifications

Diodes & Rectifiers NRVS2M attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

2.35 W

Reference Standard:

AEC-Q101; UL CERTIFIED

Maximum Repetitive Peak Reverse Voltage:

1000 V

Maximum Reverse Current:

1 uA

Maximum Reverse Recovery Time:

2 us

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVS2M Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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