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NRVS3DB

Onsemi

NRVS3DB by Onsemi

NRVS3DB by Onsemi is a single rectifier diode with a max output current of 3A and forward voltage of 1.15V. It has a reverse test voltage of 200V, making it suitable for applications requiring high efficiency and low power loss in automotive electronics. With a small outline package style and matte tin terminal finish, it operates b/w -55 to 150 °C, meeting AEC-Q101 standards.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,959 parts In-Stock

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Digiode

USA . 943 parts In-Stock

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943

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AZTECH Wire

Italy . 38 parts In-Stock

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$13.270

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38

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SupplyDigital Components

Austria . 7,330 parts In-Stock

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RC Electronics

USA . 2,800 parts In-Stock

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TANS Electronics

Latvia . 2,109 parts In-Stock

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Kulean Microsystems

USA . 1,727 parts In-Stock

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UHIMA Technologies

Türkiye . 699 parts In-Stock

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699

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Problanco Electronics

Mexico . 440 parts In-Stock

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Corohmni

South Africa . 356 parts In-Stock

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Corphita

USA . 115 parts In-Stock

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Overview

Experience superior quality and performance with the Onsemi NRVS3DB diode rectifier. Manufactured by a trusted industry leader, this product offers unmatched reliability and efficiency for a wide range of applications. From automotive to industrial, this diode rectifier is designed to provide optimal functionality and durability. With a maximum reverse recovery time of 1.5 us and a maximum output current of 3 A, customers can trust in the value and benefits that this product brings to their projects. Choose the NRVS3DB for top-notch performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for a variety of environments and applications.

Maximum Reverse Recovery Time: 1.5 us

Ensures fast switching and efficient operation of the diode, ideal for high frequency applications.

Maximum Reverse Current: 10 uA

Low reverse current minimizes power loss and improves overall efficiency of the diode.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures without degradation, making it reliable in industrial and automotive applications.

Terminal Finish: MATTE TIN

Provides a reliable and low-resistance contact surface for optimal performance and connectivity.

Reference Standard: AEC-Q101

Meets automotive industry standards for quality and reliability, ensuring suitable performance in automotive applications.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification of AC to DC, making it suitable for power supply and conversion applications.

Maximum Forward Voltage (VF): 1.15 V

Low forward voltage drop minimizes power dissipation and increases efficiency of the diode.

Maximum Output Current: 3 A

Capable of handling high current loads, making it suitable for power distribution and control.

Diode Element Material: SILICON

Silicon diodes offer high efficiency and reliability, making them a popular choice for a wide range of applications.

Technical Specifications

Diodes & Rectifiers NRVS3DB attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

10 uA

Maximum Reverse Recovery Time:

1.5 us

Reverse Test Voltage:

200 V

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVS3DB Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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