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NRVS3GB

Onsemi

NRVS3GB by Onsemi

NRVS3GB by Onsemi is a single rectifier diode with a max reverse recovery time of 1.5 us and a max output current of 3A. It operates in temperatures ranging from -55 to 150 °C and has a peak reflow temperature of 260 °C. This diode is commonly used in automotive applications due to its AEC-Q101 reference standard compliance.

Median Price

$0.168

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,000 parts In-Stock

1+ parts

$0.750

100+ parts

-

1k+ parts

$0.665

10k+ parts

$0.148

3,000

$0.750

-

$0.665

$0.148

Verical

USA . 60,000 parts In-Stock

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$0.162

60,000

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$0.162

Rochester

USA . 60,000 parts In-Stock

1+ parts

-

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$0.175

1k+ parts

$0.145

10k+ parts

$0.130

60,000

-

$0.175

$0.145

$0.130

Chip1Stop

Japan . 12,000 parts In-Stock

1+ parts

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$0.134

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$0.134

Arrow

USA . 6,000 parts In-Stock

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Flip Electronics (Authorized)

USA . 120 parts In-Stock

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Vyrian

USA . 1,675 parts In-Stock

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$0.134

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$0.134

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Digiode

USA . 1,654 parts In-Stock

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$0.136

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1,654

$0.136

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Flip Electronics

USA . 12,120 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,587 parts In-Stock

1+ parts

$0.129

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1,587

$0.129

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Corohmni

South Africa . 59 parts In-Stock

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$0.134

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59

$0.134

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Component Stockers USA

USA . 22,325 parts In-Stock

1+ parts

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100+ parts

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$0.140

22,325

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$0.140

SupplyDigital Components

Austria . 6,716 parts In-Stock

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6,716

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Kulean Microsystems

USA . 1,554 parts In-Stock

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Problanco Electronics

Mexico . 920 parts In-Stock

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UHIMA Technologies

Türkiye . 775 parts In-Stock

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Microchip USA

USA . 290 parts In-Stock

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TANS Electronics

Latvia . 97 parts In-Stock

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Overview

Discover the NRVS3GB by Onsemi, a high-quality rectifier diode designed to meet your circuit needs with precision and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode offers a range of applications from power supplies to automotive electronics. With a maximum output current of 3A and a peak reverse voltage of 400V, this diode ensures superior performance and efficiency. Say goodbye to worries about overheating or breakdowns, as the NRVS3GB is built to withstand extreme temperatures and deliver consistent results. Upgrade your electronic projects with the NRVS3GB and experience the difference in quality and reliability today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan.

Maximum Reverse Recovery Time: 1.5 us

Fast reverse recovery time allows for efficient operation and performance.

Reverse Test Voltage: 400 V

High reverse test voltage ensures reliable operation in various applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range enables use in diverse environments.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability for easy installation.

Technical Specifications

Diodes & Rectifiers NRVS3GB attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

10 uA

Maximum Reverse Recovery Time:

1.5 us

Reverse Test Voltage:

400 V

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVS3GB Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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