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NRVS3BB

Onsemi

NRVS3BB by Onsemi

NRVS3BB by Onsemi is a single rectifier diode with a max reverse recovery time of 1.5 us and max output current of 3 A. It operates in temperatures ranging from -55 to 150 °C and is ideal for applications requiring a small outline, surface-mount diode with a peak reflow temperature of 260 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 4,012 parts In-Stock

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Digiode

USA . 918 parts In-Stock

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Advanced Electronics

New Zealand . 600 parts In-Stock

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$0.063

100+ parts

$0.057

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$0.052

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600

$0.063

$0.057

$0.052

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AZTECH Wire

Italy . 672 parts In-Stock

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$13.390

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672

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Problanco Electronics

Mexico . 7,845 parts In-Stock

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SupplyDigital Components

Austria . 7,671 parts In-Stock

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RC Electronics

USA . 2,980 parts In-Stock

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TANS Electronics

Latvia . 1,381 parts In-Stock

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Corohmni

South Africa . 396 parts In-Stock

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Corphita

USA . 322 parts In-Stock

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UHIMA Technologies

Türkiye . 110 parts In-Stock

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Kulean Microsystems

USA . 19 parts In-Stock

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Overview

Unlock the power of innovation with the NRVS3BB by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-quality diodes & rectifiers that meet the highest standards. Perfect for a wide range of applications, this product offers unparalleled reliability and efficiency. Say goodbye to downtime and hello to seamless performance with the NRVS3BB. Trust Onsemi to deliver cutting-edge technology that exceeds expectations every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the diode, ensuring a longer lifespan.

Maximum Reverse Recovery Time: 1.5 us

Fast reverse recovery time allows for efficient switching and improved performance of the diode.

Maximum Reverse Current: 10 uA

Low reverse current ensures minimal power loss and improved efficiency of the diode.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for versatile use in different temperature environments.

Terminal Finish: MATTE TIN

Matte Tin finish provides good solderability for easy installation of the diode.

Technical Specifications

Diodes & Rectifiers NRVS3BB attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

10 uA

Maximum Reverse Recovery Time:

1.5 us

Reverse Test Voltage:

100 V

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVS3BB Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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