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NBRS2H100T3G-VF01

Onsemi

NBRS2H100T3G-VF01 by Onsemi

NBRS2H100T3G-VF01 by Onsemi is a Schottky rectifier diode with 100V reverse test voltage and 2A max output current. Ideal for power applications, it operates b/w -65 to 175 °C with peak reflow temp of 260C. Its small outline package makes it suitable for surface mount designs.

Median Price

$0.265

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

$0.265

1k+ parts

$0.220

10k+ parts

$0.196

2,500

-

$0.265

$0.220

$0.196

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics

USA . 52,500 parts In-Stock

1+ parts

-

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-

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52,500

-

-

-

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Chip Stock

USA . 33,725 parts In-Stock

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33,725

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Vyrian

USA . 2,803 parts In-Stock

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2,803

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Digiode

USA . 1,406 parts In-Stock

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1,406

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$0.028

100+ parts

$0.025

1k+ parts

$0.023

10k+ parts

-

2,000

$0.028

$0.025

$0.023

-

Aztec Data Supply Inc.

USA . 525 parts In-Stock

1+ parts

$0.100

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-

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525

$0.100

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Ampacity Inc.

Singapore . 27,237 parts In-Stock

1+ parts

$0.184

100+ parts

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27,237

$0.184

-

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Semicontronic

India . 27,165 parts In-Stock

1+ parts

$0.184

100+ parts

$0.179

1k+ parts

$0.178

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-

27,165

$0.184

$0.179

$0.178

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AZTECH Wire

Italy . 1,018 parts In-Stock

1+ parts

$12.500

100+ parts

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1,018

$12.500

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TANS Electronics

Latvia . 6,379 parts In-Stock

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6,379

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SupplyDigital Components

Austria . 5,786 parts In-Stock

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5,786

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Problanco Electronics

Mexico . 5,208 parts In-Stock

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Kulean Microsystems

USA . 1,666 parts In-Stock

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1,666

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Continental Prestige Electronics

USA . 1,397 parts In-Stock

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Argo Parts USA

USA . 1,190 parts In-Stock

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Corphita

USA . 941 parts In-Stock

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941

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iodParts Technologies Inc.

India . 900 parts In-Stock

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900

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UHIMA Technologies

Türkiye . 513 parts In-Stock

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513

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Bastille Electronics

Australia . 300 parts In-Stock

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300

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Corohmni

South Africa . 293 parts In-Stock

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293

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Overview

Discover the power of the NBRS2H100T3G-VF01 by Onsemi, a top-of-the-line rectifier diode designed for high-performance applications. Manufactured by Onsemi, known for their superior quality and reliability, this Schottky diode offers customers exceptional value with its low forward voltage and high output current capabilities. Ideal for power applications, this diode is perfect for those looking for efficiency and dependability in their electronic devices. Upgrade your projects with the NBRS2H100T3G-VF01 and experience the difference that Onsemi's advanced technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making it suitable for various environments.

Config: SINGLE

Simplifies the design and installation process, making it user-friendly.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Maximum Reverse Current: 8 uA

Ensures minimal power loss and high efficiency.

Package Shape: RECTANGULAR

Offers a compact and space-saving design.

Reverse Test Voltage: 100 V

Provides high voltage protection for electronic components.

No. of Terminals: 2

Simplifies the connection process, reducing the risk of errors.

Package Style (Meter): SMALL OUTLINE

Fits well in small spaces and is suitable for compact designs.

Application: POWER

Ideal for power applications, providing reliable performance.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, ensuring stable operation.

Minimum Operating Temperature: -65 °C

Can operate in low-temperature environments without issues.

Terminal Finish: MATTE TIN

Provides a reliable and corrosion-resistant terminal finish.

Terminal Position: DUAL

Offers flexibility in design and installation options.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for short durations, ensuring durability.

Peak Reflow Temperature °C: 260

Withstands high reflow temperatures, ensuring stable performance during assembly.

Reference Standard: AEC-Q101

Meets automotive industry standards for reliability and performance.

Diode Type: RECTIFIER DIODE

Suitable for rectification applications, providing smooth DC output.

Maximum Forward Voltage (VF): 0.79 V

Features low forward voltage drop, minimizing power loss.

Maximum Output Current: 2 A

Provides a high output current capability for power applications.

Technology: SCHOTTKY

Offers fast switching speeds and low forward voltage drop for efficiency.

Terminal Form: J BEND

Facilitates easy and secure mounting on circuit boards.

Maximum Repetitive Peak Reverse Voltage: 100 V

Provides high reverse voltage protection for circuit components.

Maximum Non Repetitive Peak Forward Current: 130 A

Can withstand high forward currents for short durations.

Diode Element Material: SILICON

Ensures reliable and durable performance for long-term use.

Technical Specifications

Diodes & Rectifiers NBRS2H100T3G-VF01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.79 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

130 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

8 uA

Reverse Test Voltage:

100 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NBRS2H100T3G-VF01 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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