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NBRS2H100NT3G

Onsemi

NBRS2H100NT3G by Onsemi

NBRS2H100NT3G by Onsemi is a Schottky rectifier diode with a max reverse voltage of 100V and forward voltage of 0.79V. It has a max output current of 2A, making it suitable for power applications. With an operating temperature range from -65 to 175°C, this diode is ideal for various electronic devices.

Median Price

$0.322

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 277,400 parts In-Stock

1+ parts

$0.184

100+ parts

$0.106

1k+ parts

-

10k+ parts

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277,400

$0.184

$0.106

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DigiKey

USA . 3,936 parts In-Stock

1+ parts

$0.460

100+ parts

$0.270

1k+ parts

$0.184

10k+ parts

$0.132

3,936

$0.460

$0.270

$0.184

$0.132

Mouser Electronics

USA . 2,971 parts In-Stock

1+ parts

$0.460

100+ parts

$0.271

1k+ parts

$0.185

10k+ parts

$0.134

2,971

$0.460

$0.271

$0.185

$0.134

Verical

USA . 277,400 parts In-Stock

1+ parts

-

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$0.106

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277,400

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$0.106

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Avnet

USA . 5,000 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.168

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-

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50

$0.168

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Digiode

USA . 2,473 parts In-Stock

1+ parts

$0.370

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2,473

$0.370

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Vyrian

USA . 112,796 parts In-Stock

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112,796

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Chip Stock

USA . 11,500 parts In-Stock

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NAC Semi

USA . 5,000 parts In-Stock

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$0.148

5,000

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$0.148

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 112,733 parts In-Stock

1+ parts

$0.092

100+ parts

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112,733

$0.092

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Corohmni

South Africa . 155 parts In-Stock

1+ parts

$0.124

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155

$0.124

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Argo Parts USA

USA . 2,962 parts In-Stock

1+ parts

$0.168

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$0.163

2,962

$0.168

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$0.163

Continental Prestige Electronics

USA . 1,668 parts In-Stock

1+ parts

$0.168

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$0.165

1,668

$0.168

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$0.165

Netroflash

USA . 100 parts In-Stock

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$0.168

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100

$0.168

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Corphita

USA . 1,431 parts In-Stock

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$0.350

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$0.350

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Component Connect

USA . 549,756 parts In-Stock

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Infinite Electronics LLP (Excess)

. 88,001 parts In-Stock

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88,001

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Kulean Microsystems

USA . 7,159 parts In-Stock

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7,159

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Problanco Electronics

Mexico . 3,138 parts In-Stock

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SupplyDigital Components

Austria . 947 parts In-Stock

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UHIMA Technologies

Türkiye . 168 parts In-Stock

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TANS Electronics

Latvia . 52 parts In-Stock

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Overview

Unlocking the power of innovation, Onsemi presents the NBRS2H100NT3G, a premium quality Schottky rectifier diode designed for power applications. With a maximum reverse voltage of 100V and an impressive output current of 2A, this diode offers unparalleled performance and reliability. Whether you're looking to enhance your power supply, motor control, or lighting systems, this single-configured diode in a sleek rectangular package is the perfect solution. Trust in Onsemi's expertise and elevate your projects with the NBRS2H100NT3G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and insulation for the diode, ensuring long-lasting performance.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Maximum Reverse Current: 8 uA

Low reverse current ensures efficient operation.

Package Shape: RECTANGULAR

Easily fits into standard electronic circuits.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it suitable for various environments.

Diode Type: RECTIFIER DIODE

Ideal for converting AC to DC power in power applications.

Technology: SCHOTTKY

Schottky diodes have faster switching speeds and lower forward voltage drop compared to standard diodes.

Maximum Output Current: 2 A

Capable of handling higher currents, making it suitable for power applications.

Diode Element Material: SILICON

Silicon diodes offer good electrical conductivity and are widely used in electronic devices.

Technical Specifications

Diodes & Rectifiers NBRS2H100NT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Minimum Breakdown Voltage:

100 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.79 V

JESD-30 Code:

R-PDSO-J2

Maximum Non Repetitive Peak Forward Current:

130 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

8 uA

Reverse Test Voltage:

100 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

NBRS2H100NT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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