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NBRS2H100T3G

Onsemi

NBRS2H100T3G by Onsemi

NBRS2H100T3G by Onsemi is a Schottky rectifier diode with a max reverse voltage of 100V and forward current of 2A. It operates b/w -65 to 175 °C, making it suitable for power applications. This single-configured diode comes in a small outline package with dual terminals for surface mount assembly.

Median Price

$0.305

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 83,388 parts In-Stock

1+ parts

-

100+ parts

$0.319

1k+ parts

$0.252

10k+ parts

$0.221

83,388

-

$0.319

$0.252

$0.221

DigiKey

USA . 69,738 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.270

69,738

-

-

-

$0.270

Rochester

USA . 1,738 parts In-Stock

1+ parts

-

100+ parts

$0.317

1k+ parts

$0.263

10k+ parts

$0.234

1,738

-

$0.317

$0.263

$0.234

Verical

USA . 1,738 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.293

1,738

-

-

-

$0.293

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 862 parts In-Stock

1+ parts

$0.247

100+ parts

-

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862

$0.247

-

-

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Vyrian

USA . 1,559 parts In-Stock

1+ parts

$0.260

100+ parts

-

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1,559

$0.260

-

-

-

Chip Stock

USA . 28,900 parts In-Stock

1+ parts

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28,900

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Sensible Micro Corp

USA . 1,047 parts In-Stock

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1,047

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Bristol Electronics

USA . 491 parts In-Stock

1+ parts

-

100+ parts

$0.292

1k+ parts

$0.169

10k+ parts

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491

-

$0.292

$0.169

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Semtec, LLC

USA . 326 parts In-Stock

1+ parts

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326

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 709 parts In-Stock

1+ parts

$0.234

100+ parts

-

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709

$0.234

-

-

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Component Stockers USA

USA . 92,333 parts In-Stock

1+ parts

$0.260

100+ parts

$0.110

1k+ parts

$0.100

10k+ parts

$0.230

92,333

$0.260

$0.110

$0.100

$0.230

Corohmni

South Africa . 321 parts In-Stock

1+ parts

$0.260

100+ parts

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321

$0.260

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Continental Prestige Electronics

USA . 122,500 parts In-Stock

1+ parts

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100+ parts

$0.319

1k+ parts

$0.221

10k+ parts

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122,500

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$0.319

$0.221

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Perfect Parts

USA . 75,544 parts In-Stock

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75,544

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Kepictronics

USA . 72,540 parts In-Stock

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72,540

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RC Electronics

USA . 69,411 parts In-Stock

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69,411

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Problanco Electronics

Mexico . 6,055 parts In-Stock

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6,055

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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TANS Electronics

Latvia . 2,297 parts In-Stock

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2,297

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SupplyDigital Components

Austria . 1,204 parts In-Stock

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1,204

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iodParts Technologies Inc.

India . 900 parts In-Stock

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900

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Kulean Microsystems

USA . 899 parts In-Stock

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899

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UHIMA Technologies

Türkiye . 346 parts In-Stock

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346

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Overview

Discover the NBRS2H100T3G by Onsemi, a high-quality Schottky rectifier diode designed for power applications. With a maximum reverse voltage of 100V and output current of 2A, this diode offers reliable performance in a small outline package. Manufactured by Onsemi, a trusted name in the industry known for its superior quality and innovative technology, customers can trust in the durability and efficiency of this product. Whether you're working on automotive, industrial, or consumer electronics projects, the NBRS2H100T3G provides the value, benefits, and advantages you need for successful results. Invest in excellence with Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diode, making it more durable and long-lasting.

Maximum Reverse Current: 8 uA

Low reverse current ensures minimal power loss and efficient operation of the diode.

Reverse Test Voltage: 100 V

Suitable for applications requiring high reverse voltage protection.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it suitable for various power applications.

Terminal Finish: MATTE TIN

Provides good conductivity and solderability for reliable connections.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification of AC to DC current, making it ideal for power applications.

Maximum Forward Voltage (VF): 0.79 V

Low forward voltage drop ensures minimal power loss and efficient operation.

Technology: SCHOTTKY

Schottky diodes have fast switching speed and low forward voltage drop, improving efficiency.

Maximum Repetitive Peak Reverse Voltage: 100 V

Can handle high reverse voltage spikes without failure, ensuring reliable operation.

Technical Specifications

Diodes & Rectifiers NBRS2H100T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.79 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

130 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

8 uA

Reverse Test Voltage:

100 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NBRS2H100T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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