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SBRS81100T3G-VF01

Onsemi

SBRS81100T3G-VF01 by Onsemi

SBRS81100T3G-VF01 by Onsemi is a Schottky rectifier diode with a max reverse voltage of 100V and forward voltage of 0.75V, ideal for power applications. It has a max output current of 2A and low reverse current of 500uA, making it suitable for high-power circuits. The diode's small outline package and dual terminals with matte tin finish offer easy surface-mount installation in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Bristol Electronics

USA . 92,742 parts In-Stock

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Vyrian

USA . 12,258 parts In-Stock

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Digiode

USA . 2,482 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Advanced Electronics

New Zealand . 33 parts In-Stock

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$0.072

100+ parts

$0.066

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$0.059

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33

$0.072

$0.066

$0.059

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Aztec Data Supply Inc.

USA . 2,697 parts In-Stock

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$0.160

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2,697

$0.160

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Semicontronic

India . 728 parts In-Stock

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$1.010

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$0.985

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$0.980

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728

$1.010

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$0.980

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Ampacity Inc.

Singapore . 573 parts In-Stock

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$1.010

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573

$1.010

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AZTECH Wire

Italy . 729 parts In-Stock

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$16.876

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729

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Infinite Electronics LLP (Excess)

. 92,743 parts In-Stock

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Problanco Electronics

Mexico . 7,557 parts In-Stock

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Continental Prestige Electronics

USA . 6,732 parts In-Stock

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Kulean Microsystems

USA . 5,423 parts In-Stock

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SupplyDigital Components

Austria . 5,163 parts In-Stock

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Bastille Electronics

Australia . 2,542 parts In-Stock

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TANS Electronics

Latvia . 947 parts In-Stock

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Argo Parts USA

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Corohmni

South Africa . 340 parts In-Stock

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Corphita

USA . 327 parts In-Stock

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UHIMA Technologies

Türkiye . 117 parts In-Stock

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Lixinc

USA . 76 parts In-Stock

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Overview

Enhance your power applications with the SBRS81100T3G-VF01 by Onsemi. Known for their top-notch quality and reliability, Onsemi delivers cutting-edge diodes & rectifiers designed to optimize performance. This Schottky technology diode offers a maximum output current of 2A and a low forward voltage of 0.75V, ensuring efficient power management. Whether you're in automotive, industrial, or consumer electronics, this product's high reverse test voltage of 100V and small outline package make it a versatile solution for various power needs. Upgrade to Onsemi for superior power optimization and trusted performance.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - This material provides durability and protection for the diode, making it suitable for various applications.

Config

SINGLE - The single configuration simplifies circuit design and installation, making it easy to incorporate into a system.

Surface Mount

YES - The surface mount capability enables easy and secure attachment to PCBs, saving space and reducing assembly time.

Maximum Reverse Current

500 uA - The low reverse current ensures minimal power loss and efficient operation of the diode.

Package Shape

RECTANGULAR - The rectangular shape allows for easy integration into different electronic devices and systems.

Reverse Test Voltage

100 V - The high reverse test voltage provides protection against reverse polarity and ensures reliable performance.

No. of Terminals

2 - The two terminals simplify connectivity and installation of the diode in a circuit.

Package Style (Meter)

SMALL OUTLINE - The small outline package style saves space and allows for compact designs in electronic applications.

Application

POWER - Designed for power applications, this diode can handle high current and voltage levels in various systems.

Minimum Operating Temperature

65 °C - The wide operating temperature range allows for use in extreme environmental conditions.

Terminal Finish

MATTE TIN - The matte tin finish provides excellent solderability and corrosion resistance for long-term reliability.

Terminal Position

DUAL - The dual terminal position facilitates easy connection and secure mounting of the diode in a circuit.

Maximum Time At Peak Reflow Temperature (s)

30 - The short reflow time minimizes heat exposure and ensures the reliability of the diode during soldering.

Peak Reflow Temperature °C

260 - The high peak reflow temperature allows for efficient and robust soldering of the diode.

Reference Standard

AEC-Q101 - Compliant with AEC-Q101 standards, ensuring high quality and reliability for automotive applications.

Diode Type

RECTIFIER DIODE - This rectifier diode efficiently converts AC to DC current, making it ideal for power supply and rectification applications.

Maximum Forward Voltage (VF)

0.75 V - The low forward voltage drop minimizes power loss and improves efficiency in power conversion.

Maximum Output Current

2 A - With a high maximum output current, this diode can handle heavy loads and power demands in various systems.

Technology

SCHOTTKY - The Schottky technology offers fast switching speed, low forward voltage drop, and high efficiency in power applications.

Terminal Form

J BEND - The J-bend terminal form provides mechanical stability and easy soldering during assembly.

Maximum Repetitive Peak Reverse Voltage

100 V - The high repetitive peak reverse voltage rating ensures protection against reverse voltage spikes in the circuit.

Maximum Non Repetitive Peak Forward Current

50 A - With a high non-repetitive peak forward current rating, this diode can withstand short-term surge currents and transient events.

Diode Element Material

SILICON - The silicon diode element material provides high reliability, low leakage current, and consistent performance in various operating conditions.

Technical Specifications

Diodes & Rectifiers SBRS81100T3G-VF01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.75 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

500 uA

Reverse Test Voltage:

100 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBRS81100T3G-VF01 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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