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SBRS8120T3G

Onsemi

SBRS8120T3G by Onsemi

SBRS8120T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.6V. It is designed for power applications, featuring a reverse test voltage of 20V and max reverse current of 1000uA. The diode comes in a small outline package style suitable for surface mount technology.

Median Price

$0.060

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 17,500 parts In-Stock

1+ parts

$0.060

100+ parts

$0.060

1k+ parts

$0.060

10k+ parts

-

17,500

$0.060

$0.060

$0.060

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 596 parts In-Stock

1+ parts

$0.057

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596

$0.057

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Vyrian

USA . 7,743 parts In-Stock

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7,743

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Prism Electronics

USA . 78 parts In-Stock

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78

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Distributors (Availability)

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Corphita

USA . 1,853 parts In-Stock

1+ parts

$0.054

100+ parts

-

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1,853

$0.054

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Corohmni

South Africa . 342 parts In-Stock

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$0.060

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342

$0.060

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.073

100+ parts

$0.066

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$0.060

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-

100

$0.073

$0.066

$0.060

-

AZTECH Wire

Italy . 1,018 parts In-Stock

1+ parts

$13.180

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1,018

$13.180

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Component Stockers USA

USA . 636 parts In-Stock

1+ parts

$99.990

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636

$99.990

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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90,000

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Kepictronics

USA . 72,540 parts In-Stock

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72,540

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Authorized Procurement Solutions

USA . 30,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 10,470 parts In-Stock

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10,470

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Kulean Microsystems

USA . 6,711 parts In-Stock

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6,711

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Problanco Electronics

Mexico . 4,371 parts In-Stock

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4,371

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Perfect Parts

USA . 4,333 parts In-Stock

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TANS Electronics

Latvia . 2,041 parts In-Stock

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2,041

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SupplyDigital Components

Austria . 1,634 parts In-Stock

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1,634

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UHIMA Technologies

Türkiye . 296 parts In-Stock

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296

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Overview

Discover the power and efficiency of the SBRS8120T3G by Onsemi, a top-quality rectifier diode perfect for power applications. Manufactured by Onsemi, a trusted name in the industry, this product offers unmatched reliability and performance. With a maximum forward voltage of 0.6V and a maximum output current of 1A, this Schottky diode provides exceptional value and benefits to customers. Whether you're looking for high-speed switching or low power loss, the SBRS8120T3G is the ideal choice for your electronic projects. Elevate your designs with this versatile and cutting-edge diode from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is lightweight and durable, making the diode easy to handle and install.

Config: SINGLE

Single configuration simplifies circuit design and reduces complexity.

Surface Mount: YES

Surface mount capability enables easy and efficient PCB assembly.

Maximum Reverse Current: 1000 uA

Low maximum reverse current ensures efficient operation and minimal power loss.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and mounting on PCBs.

No. of Terminals: 2

Two terminals simplify connectivity and installation.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, ideal for compact designs.

Application: POWER

Designed for power applications, ensuring reliable performance in high-power circuits.

Minimum Operating Temperature: -65 °C

Wide operating temperature range allows for use in extreme environments.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability for secure electrical connections.

Terminal Position: DUAL

Dual terminal position allows for versatile and flexible installation options.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time minimizes thermal stress on the diode during soldering.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures reliable solder joints and long-term stability.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high quality and reliability suitable for automotive applications.

Diode Type: RECTIFIER DIODE

Designed for rectification applications, ensuring efficient conversion of AC to DC.

Maximum Forward Voltage (VF): 0.6 V

Low forward voltage drop minimizes power dissipation and improves energy efficiency.

Maximum Output Current: 1 A

1A maximum output current capability allows for use in a wide range of power applications.

Technology: SCHOTTKY

Schottky technology provides fast switching speeds and low forward voltage drop, ideal for high-frequency applications.

Terminal Form: J BEND

J bend terminal form provides secure mechanical connection and easy soldering.

Maximum Repetitive Peak Reverse Voltage: 20 V

20V maximum repetitive peak reverse voltage ensures protection against reverse voltage surges.

Maximum Non Repetitive Peak Forward Current: 40 A

40A maximum non-repetitive peak forward current capability ensures reliability under transient overload conditions.

Diode Element Material: SILICON

Silicon diode element material provides good electrical performance and reliability.

Technical Specifications

Diodes & Rectifiers SBRS8120T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.6 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

20 V

Maximum Reverse Current:

1000 uA

Reverse Test Voltage:

20 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBRS8120T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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